Faculty of Electronic Engineering & Technology
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MY
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Pauh Putra, Perlis

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Now showing 1 - 10 of 26
  • Publication
    Remazol orange dye sensitized solar cell
    ( 2017-01-03)
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nor Azura Malini Ahmad Hambali
    ;
    Muda M.R.
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Nurul Izza Mohd Nor
    ;
    Norhawati Ahmad
    ;
    Nazuhusna Khalid
    ;
    Nur M. Selamat
    ;
    Nur Asyikin Mohd Anhar
    Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device performance was tested using solar cell simulator. The results show that the performance was increased at higher dye concentration and longer immersion time. The best device performance was obtained at 0.2% for dye concentration of 2.5 mM immersed at 24 hours.
  • Publication
    Effect of sodium ion addition on copper selenide/chitosan film towards electrical and shielding efficiency improvement
    ( 2024-06)
    Nurul Najiha Mazu
    ;
    Hazeem Ikhwan Mazlan
    ;
    Josephine Ying Chyi Liew
    ;
    Nurul Huda Osman
    ;
    Muhammad Mahyiddin Ramli
    ;
    Ali Reshak
    The operation of electronic devices can be disrupted by unwanted electromagnetic signals, affecting its operation. Deploying electromagnetic shielding is a viable solution to minimize the impact of electromagnetic interference (EMI). The conventional methods of electromagnetic shielding use metal gaskets to safeguard sensitive electronic components, which have drawbacks of cost and weight. Hence, electromagnetic shielding polymer can be an alternative to replace metal gaskets. This work investigates the effect of sodium ion (Na) addition to copper selenide/chitosan (CuSe/Ch) film for electromagnetic shielding applications. The shielding polymers were produced using solution casting methods, while the CuSe was synthesized using the chemical coprecipitation method. Impedance spectroscopy and two port waveguide methods were used to characterize the prepared polymer's electrical properties and shielding efficiency. The results indicate that Na incorporation in the CuSe/Ch film resulted in a 47 % decrease in bulk resistivity and increased DC conductivity from 6.07 × 10-6 S/cm to 3.69 × 10˗5 S/cm. The AC conductivity of films containing Na demonstrates a similar level of conductivity at lower frequencies, followed by a sharp increase at higher frequencies, indicating a more substantial influence of Na at higher frequencies. Higher absorption shielding efficiency (SEA) and lower reflection shielding efficiency (SER) were achieved by introducing Na into the CuSe chitosan film. The Na/CuSe/Ch film shows higher total shielding efficiency at an average of 20 dB, equivalent to 99 % of the EM power shield.
  • Publication
    Mesoporous Structure of Doped and Undoped PEG on Ag/TiO2 Thin Film
    ( 2019-08-14)
    Abdul Razak K.
    ;
    Dewi Suriyani Che Halin
    ;
    Azani A.
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Norsuria Mahmed
    ;
    Muhammad Mahyiddin Ramli
    ;
    Sepeai S.
    In this reaserch, photocatalyst silver titanium dioxide was doped and modified by Polyethylene Glycol (PEG). The purpose of the present study was to analyse the synthesized Ag/TiO2 thin film doped and undoped PEG. Ag/TiO2 thin films on silicon wafer have been prepared by sol-gel spin coating. The samples were characterized by Grazing Incidence X-ray diffraction (GIXRD), Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscope (AFM). The doped and undoped PEG Ag/TiO2 thin films showed a mesoporous TiO2 matrix which includes TiO2 crystallites of 10-20 nm in size and small Ag nanoparticles (white spots) with various sizes ranging from 10 to 30 nm. However, doped PEG Ag/TiO2 thin film showed the Ag nanoparticles became agglomerates but still remained roughly uniform on the surface.
  • Publication
    Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications
    ( 2017-01-03)
    En A.Y.
    ;
    Norhawati Ahmad
    ;
    Muammar Mohamad Isa
    ;
    Siti Salwa Mat Siti
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together with different lattice constants, for instance InGaAs and InAlAs in order to form a heterojunction in between. However, InP is only utilised to be the substrate base of pHEMT. In the modelling process, extrinsic and intrinsic parameters need to be extracted. Briefly, a high accuracy transistor modelling enables designers to predict the real output of a circuit before it can be fabricated onto an actual chip.
  • Publication
    Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications
    ( 2017-01-03)
    Xian O.J.
    ;
    Norhawati Ahmad
    ;
    Muammar Mohamad Isa
    ;
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could be perfectly used in the most of the high frequency application. In this project, small signal models of InGaAs/InAlAs/InP pHEMT with 7 extrinsic parameters and 8 intrinsic parameters are modelled.
  • Publication
    Single wall carbon nanotubes dispersion study of different dye molecules and chitosan
    ( 2017-09-26)
    Muhammad Mahyiddin Ramli
    ;
    Siti Salwa Mat Isa
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Sohiful Anuar Zainol Murad
    Carbon Nanotubes (CNTs) is known for their hydrophobicity ability. However, this ability can become the bottleneck for the application of CNTs where a highly dispersion of materials are needed. In this project, different dispersing agents were investigated namely dye molecules and chitosan. Three different dyes are studied with different concentration, including 0.05 % of chitosan. The dispersion quality is determined by examining through UV-Vis-NIR. The best dispersion quality investigated here is when the concentration of dye molecules is higher, which is around 2.5 mM.
  • Publication
    Geopolymer Ceramic as Piezoelectric Materials: A Review
    ( 2020-07-09)
    Ahmad R.
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Wan Mastura Wan Ibrahim
    ;
    Muhammad Mahyiddin Ramli
    ;
    Victor Sandhu A.
    ;
    Nurul Aida Mohd Mortar
    ;
    Waried Wazien Ahmad Zailani
    Diverse application for geopolymer so called inorganic polymer have been expanded as potential to continue growing at a realistic rate where the properties, processing tolerance and economical are comparable with the existing materials. An aluminosilicate inorganic polymer can be produced at low temperature under highly alkali conditions from a solid aluminosilicate and an alkali silicate solution. The conversion of amorphous to semi-crystalline behaviour of geopolymer into crystalline phases upon heating make the method be an alternate way in producing ceramic materials. For another application related to high temperature packaging and enclosure of electronical devices, piezoelectric behavior turn out to be important properties to the geopolymer ceramic materials. This paper summarize the review on the important research findings on the basic geopolymer systems, current knowledge of geopolymer ceramic, and outline potential piezoelectric effect on ceramic materials.
  • Publication
    Effect of Ni on the suppression of sn whisker formation in Sn-0.7Cu solder joint
    ( 2021)
    Aimi Noorliyana Hashim
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Andrei Victor Sandu
    ;
    Muhammad Mahyiddin Ramli
    ;
    Khor Chu Yee
    ;
    Noor Zaimah Mohd Mokhtar
    ;
    Jitrin Chaiprapa
    The evolution of internal compressive stress from the intermetallic compound (IMC) Cu6Sn5 growth is commonly acknowledged as the key inducement initiating the nucleation and growth of tin (Sn) whisker. This study investigates the effect of Sn-0.7Cu-0.05Ni on the nucleation and growth of Sn whisker under continuous mechanical stress induced. The Sn-0.7Cu-0.05Ni solder joint has a noticeable effect of suppression by diminishing the susceptibility of nucleation and growth of Sn whisker. By using a synchrotron micro X-ray fluorescence (µ-XRF) spectroscopy, it was found that a small amount of Ni alters the microstructure of Cu6Sn5 to form a (Cu,Ni)6Sn5 intermetallic layer. The morphology structure of the (Cu,Ni)6Sn5 interfacial intermetallic layer and Sn whisker growth were investigated by scanning electron microscope (SEM) in secondary and backscattered electron imaging mode, which showed that there is a strong correlation between the formation of Sn whisker and the composition of solder alloy. The thickness of the (Cu,Ni)6Sn5 IMC interfacial layer was relatively thinner and more refined, with a continuous fine scallop-shaped IMC interfacial layer, and consequently enhanced a greater incubation period for the nucleation and growth of the Sn whisker. These verification outcomes proposes a scientifically foundation to mitigate Sn whisker growth in lead-free solder joint.
  • Publication
    Interdigitated electrodes as impedance and capacitance biosensors: A review
    ( 2017-09-26)
    Mazlan N.
    ;
    Muhammad Mahyiddin Ramli
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Dewi Suriyani Che Halin
    ;
    Isa S.
    ;
    Talip L.
    ;
    Nuaim Siddiqi Danial
    ;
    Sohiful Anuar Zainol Murad
    Interdigitated electrodes (IDEs) are made of two individually addressable interdigitated comb-like electrode structures. IDEs are one of the most favored transducers, widely utilized in technological applications especially in the field of biological and chemical sensors due to their inexpensive, ease of fabrication process and high sensitivity. In order to detect and analyze a biochemical molecule or analyte, the impedance and capacitance signal need to be obtained. This paper investigates the working principle and influencer of the impedance and capacitance biosensors. The impedance biosensor depends on the resistance and capacitance while the capacitance biosensor influenced by the dielectric permittivity. However, the geometry and structures of the interdigitated electrodes affect both impedance and capacitance biosensor. The details have been discussed in this paper.
  • Publication
    Comprehensive study on gate recess step for the fabrication of high-speed InGaAs/InAlAs/InP pHEMT
    ( 2017-01-03)
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of 'hump' structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed that the etch rate of bulk InGaAs is about 360 A/min and the percentage of dome height is consistent at approximately 25%. Meanwhile, the study on pHEMT epitaxial layer showed that the etching time of 3 minutes is sufficient in order to completely remove the cap layer. Gate leakage current of magnitude more than 10 times lower is observed on the devices that engaging Succinic Acid as the gate recess etching agent. The optimized processing steps will tailor for highly reproducible pHEMT fabrication process for high speed applications.