Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications
Journal
2016 3rd International Conference on Electronic Design, ICED 2016
Date Issued
2017-01-03
Author(s)
Xian O.J.
Siti Salwa Mat Isa
Missous M.
DOI
10.1109/ICED.2016.7804599
Handle (URI)
Abstract
HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could be perfectly used in the most of the high frequency application. In this project, small signal models of InGaAs/InAlAs/InP pHEMT with 7 extrinsic parameters and 8 intrinsic parameters are modelled.
Subjects
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