HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could be perfectly used in the most of the high frequency application. In this project, small signal models of InGaAs/InAlAs/InP pHEMT with 7 extrinsic parameters and 8 intrinsic parameters are modelled.
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