Dewi Suriyani Che Halin
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Preferred name
Dewi Suriyani Che Halin
Official Name
Halin, Dewi Suriyani Che
Alternative Name
Che Halin, Dewi Suriyani
Che Halin, D. S.
Suriyani Che Halin, Dewi
Halin, Dewi Suriyani Che
Halin, D. S.Che
Halin, D. S.C.
D. S., Che Halin
Main Affiliation
Scopus Author ID
36158106300
Researcher ID
AAC-9478-2019

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  • Publication
    Annealing Effects on Polycrystalline Silicon Germanium (SiGe) Thin Films grown on Nanostructured Silicon Substrates using Thermal Evaporation Technique
    ( 2022-10-01)
    Ayu Wazira Azhari
    ;
    Eop T.S.
    ;
    Dewi Suriyani Che Halin
    ;
    Sopian K.
    ;
    Uda Hashim
    ;
    Zaidi S.H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
  • Publication
    Annealing effects on polycrystalline silicon germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
    ( 2022-10)
    Ayu Wazira Azhari
    ;
    Eop, T. S.
    ;
    Dewi Suriyani Che Halin
    ;
    Sopian, K.
    ;
    Uda Hashim
    ;
    Zaidi, S. H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
  • Publication
    Microstructure evolution of Ag/TiO2 thin film
    ( 2021)
    Dewi Suriyani Che Halin
    ;
    Kamrosni Abdul Razak
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Mohd Izrul Izwan Ramli
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Ayu Wazira Azhari
    ;
    Kazuhiro Nogita
    ;
    Hideyuki Yasuda
    ;
    Marcin Nabiałek
    ;
    Jerzy J. Wysłocki
    Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.
  • Publication
    Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
    (Universiti Malaysia Perlis (UniMAP), 2022-10)
    Ayu Wazira Azhari
    ;
    Eop, T. S.
    ;
    Dewi Suriyani Che Halin
    ;
    Uda Hashim
    ;
    Sopian, K.
    ;
    Zaidi, S. H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
  • Publication
    Bioengineering technologies used for the development and equipment of complex installations to obtain energy from three renewable sources. Complex installations for coastal areas
    (IOP Publishing Ltd, 2020)
    George Poteras
    ;
    Gyorgy Deak
    ;
    Andreea-Georgiana Baraitaru
    ;
    Marius Viorel Olteanu
    ;
    Nata’lia Simona Raischi
    ;
    Dewi Suriyani Che Halin
    Considering that the production of energy from fossil sources causes environmental pollution, increasing health hazards or climate change, the research for new alternative energy sources and the development of high-performance renewable energy conversion systems are a basic concern nowadays. Thus, the development and the use of renewable energy sources can increase diversity in energy supply markets, help to ensure long-term sustainable energy resources, to reduce local and global air emissions, and provide commercial attractive options to meet the specific needs of energy services. This paper aims to improve the efficiency of a patented complex installation which was developed vertically to ensure high-energy efficiency in relation to the occupied area, that integrates three renewable energy sources (wind, solar and hydro), by applying bioengineering solutions. Improvements to the original installation consisted in modifying the initial characteristics of the off-shore system (number of slots, deflectors angle, width of slots and width of deflectors), modification of aerial module blades according to the bioengineering model of the thistle seed (Carduus nutans), and modification of the submerged module paddies according to the bioengineering model of a fish species swimmers. Following the tests performed on the modified complex installation, a major improvement of the energy efficiency compared to the (initial) control installation was observed.
  • Publication
    A short review: properties of superconducting solder
    (IOP Publishing Ltd, 2020)
    M.S. Chang
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Dewi Suriyani Che Halin
    Development of electronic devices were moving towards miniaturization, multifunction and increasingly specific service environment of solder interconnects, where this drive to the higher requirements on the solder properties. Without solder, it would be impossible to produce the infinite electronic devices that define the 21st century. Hence, solder is important in the design and engineering process. This review paper was summarized on the literature of the low-temperature solder systems for superconducting solder materials, which provide further theoretical basis for the study of superconducting solder of electronic and aerospace applications. Pb-Bi system is the most satisfactory solder as a superconducting solder, but due to the restrictions of the lead usage, so new Pb-free superconducting solder need to be invented. Of those Pb-free superconducting materials had been studied, the Sn-In-Bi ternary solder system show the greatest superconducting properties as compared to other Pb-free superconducting solder where TC = 6.9 K, HC2 (4.2 K) = 0.18 T and JC (4.2 K, 0.01 T) = 1.3 × 108 A/m2 respectively. © Published under licence by IOP Publishing Ltd.
  • Publication
    Tin and germanium substitution in lead free perovskite solar cell: current status and future trends
    (IOP Publishing, 2020)
    Ayu Wazira Azhari
    ;
    Faith Shi Xin Then
    ;
    Dewi Suriyani Che Halin
    ;
    Suhaila Sepeai
    ;
    Norasikin Ahmad Ludin
    Tin and germanium-based perovskite solar cell is gaining interest in lead-free perovskite solar cells as it is less toxic as compared to lead but possess almost all the characteristics of a perfect solar cell materials. Within 5 years, the reported efficiency of tin-based solar cells has increased from 6.4% to 9%. Although facing with stability issues as it is easily oxidised in ambient air, several studies have proven that the stability issues can be reduced. One of it is by using cesium as the 'A' cation. On the other hand, although studies on germanium-based perovskite solar cells are rarely conducted, promising results are shown when it is alloyed with tin producing narrower bandgaps and better stability owing to the protection of the GeO2 surface layer.
  • Publication
    Metal induced crystallization of polycrystalline silicon germanium: The morphological study between nickel and copper
    (AIP Publishing Ltd., 2023)
    T. S. Eop
    ;
    Ayu Wazira Azhari
    ;
    L. Mohamad Jazi
    ;
    K. S. Ting
    ;
    Dewi Suriyani Che Halin
    ;
    Abdul Kareem Thottoli
    In this study, metal induced crystallization technique is used in to obtain the lower temperature point in crystallization. Two different metals with one non-metal configuration as a baseline i.e. SiGe/Ni, SiGe/Cu and SiGe. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillar, with Ag acting as a catalyst. Following by deposition of metal namely nickel (Ni) and copper (Cu) then undergo thermal annealing from 200 ℃ until 1000 ℃ to improve the crystallinity of the Ge layer. Morphological studies of surface area were conducted using scanning electron microscopy (SEM). The results show that the crystallization temperature of SiGe with Ni was obtained at 400 ℃ while the crystallization temperature of SiGe without any metal was obtained at 600 ℃. Meanwhile the crystallinity, for SiGe/Cu only occurs in very low level where the structure did not change until the annealing was conducted at 600 ℃. Based from these result, it is proved that the metal can help lowering the crystallization temperature and improving the defects of SiGe.
  • Publication
    Development of iron thin films by electron beam physical vapour deposition (EBPVD): A Review
    ( 2020-11-24)
    Nadzri, Nur Izzati Muhammad
    ;
    Dewi Suriyani Che Halin
    ;
    Khemar, Athirah
    ;
    Hasbi, Mohd Asyraaf M.
    ;
    Yufridin Wahab
    This review paper study about the possibilities of results obtained from conducted experiment of iron (Fe) thin films by electron beam physical vapor deposition (EBPVD). Previous studies showed that by exposing the substrate of the thin film to pre-heat environment, the changes of morphology and adatom mobility is expected. Furthermore, annealed influence in the thin film also will give better-quality thin films as the surface are expected to be smoother and flat. Three different annealed temperature is conducted on the samples, which are 400 C, 800 C and 1200 C. Structural changes such as transition from alpha phase to beta phase, is possible due to the presence of high temperature.
      3  30
  • Publication
    Preliminary Study of Hydrothermal Synthesis of TiO2-GO Composites as a High Performance Photocatalyst
    ( 2020-11-24)
    Noor Azira Mohd Noor
    ;
    Murizam Darus
    ;
    Dewi Suriyani Che Halin
    ;
    Muhammad Asri Idris
    ;
    Yunos N.F.M.
    In this study, the addition of graphene oxide (GO) into TiO2 was investigated. GO was prepared by modified Hummer method before it was added into TiO2 via hydrothermal method. The graphite and GO was characterized by Raman spectra, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and scanning electron microscope (SEM) along with the TiO2-GO composites also have been characterized. The morphology of TiO2 deposited on the surface of the GO sheet was observed by SEM. the phase formation of anisotropic anatase (TiO2) of the TiO2-GO was detected in XRD. The photocatalytic activity was determined by calculating the photodegradation efficiency of methylene blue (MB) under UV light irradiation. The photodegradation of MB were increased with time for TiO2-GO compared to pure TiO2. The results indicated that TiO2-GO composites was successfully produced using hydrothermal method for the photocatalytic application.
      21  2