Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together with different lattice constants, for instance InGaAs and InAlAs in order to form a heterojunction in between. However, InP is only utilised to be the substrate base of pHEMT. In the modelling process, extrinsic and intrinsic parameters need to be extracted. Briefly, a high accuracy transistor modelling enables designers to predict the real output of a circuit before it can be fabricated onto an actual chip.
