Uda Hashim
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Preferred name
Uda Hashim
Official Name
Uda, Hashim
Alternative Name
Hashimb, U.
Hashim, Uda
Hashim, U.
Uda, Hashim
Main Affiliation
Scopus Author ID
22633937800
Researcher ID
CVC-6955-2022

Research Output
Now showing 1 - 7 of 7
  • Publication
    Facile electrical DNA genosensor for human papillomavirus (HPV 58) for early detection of cervical cancer
    ( 2023-07)
    F. Nadhirah Jaapar
    ;
    Nor Azizah Parmin
    ;
    Nur Hamidah Abdul Halim
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Ruslinda A. Rahim
    ;
    Sh. Nadzirah
    ;
    Voon Chun Hong
    ;
    Muhammad Nur Aiman Uda
    ;
    Wei Chern Ang
    ;
    Iffah Izzati Zakaria
    ;
    Zulida Rejali
    ;
    Amilia Afzan
    ;
    Azrul Azlan Hamzah
    ;
    Chang Fu Dee
    ;
    F. Syakirah Halim
    For decades, a Pap smear test has been applied as a conventional method in detecting Human Papillomavirus caused cervical cancer. False-positive results were also recorded while using it as conventional method. Current biosensor such as Hybrid (II) Capture resulted in higher time consumption and cost. s Meanwhile, in this study we provided facile, mini, rapid, highly sensitive, eco-friendly, and cost-effective sensing system focusing on HPV strain 58 (HPV58) in a nano-size lab-on-chip technology genosensor. 30-mer of virus ssDNA designed and analyzed as a probe via bioinformatics tools such as GenBank, Basic Local Alignment Searching Tools (BLAST) and ClustalW. Nanotechnology-developed colloidal Gold-nanoparticles (AuNPs) are used in the biosensor fabrication to produce high stability and electron efficient transmission during electrical measurement. AuNPs-APTES modified on active sites of IDEs, followed by immobilization of specific probe ssDNA for HPV 58. Hydrogen binding during hybridization with its target produce electrical signals measured by KEITHLEY 2450 (Source Meter). The genosensor validated with different types of targets such as complimentary, non-complementary and single mismatch oligonucleotides. The serial dilution of target concentration has been experimented triplicate (n=3) range from 1fM to 10μM. The slope of calibration curve resulted 2.389E-0 AM-1 with regression coefficient (R2) = 0.97535.
  • Publication
    Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
    (Universiti Malaysia Perlis (UniMAP), 2022-10)
    Ayu Wazira Azhari
    ;
    Eop, T. S.
    ;
    Dewi Suriyani Che Halin
    ;
    Uda Hashim
    ;
    Sopian, K.
    ;
    Zaidi, S. H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
  • Publication
    Arthropods-mediated green synthesis of Zinc oxide nanoparticles using cellar spider extract a biocompatible remediation for environmental approach
    ( 2024-06)
    Muzamir Isa
    ;
    Muhammad Nur Aiman Uda
    ;
    M. A. R. Irfan
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Hafiza Shukor
    ;
    MRM Huzaifah
    ;
    Maimunah Mohd Ali
    ;
    Nur Hulwani Ibrahim
    ;
    Muaz Mohd Zaini Makhtar
    ;
    Ng Qi Hwa
    ;
    Mohd Khairul Rabani Hashim
    ;
    Zainal Abidin Arsat
    ;
    Nor Azizah Parmin
    ;
    Liyana Ahmad Sofri
    ;
    Mahfuz Affif Mohd Ruslan
    ;
    Tijjani Adam
    This study presents an eco-friendly approach to synthesizing zinc oxide nanoparticles (ZnO NPs) using extracts from cellar spiders, addressing environmental and health concerns associated with conventional methods. The spider extract efficiently reduced zinc acetate dihydrate, and the synthesized ZnO NPs underwent comprehensive quantitative characterization, including size, shape, morphology, surface chemistry, thermal stability, and optical properties using Fourier-transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), zeta potential measurements, thermogravimetric analysis (TGA), and UV-vis spectroscopy. The nanoparticles exhibited intended characteristics, and their adsorption capability for methylene blue (MB) was quantitatively assessed using the Freundlich isotherm model and pseudo-second-order kinetic model, providing numerical insights into MB removal efficiency. The study demonstrates the potential of these green-synthesized ZnO NPs for applications in environmental remediation, wastewater treatment, and antibacterial therapies, contributing to both sustainable nanomaterial development and quantitative understanding of their functional properties.
      28  1
  • Publication
    Simulasi fabrikasi simpangan cetek ultra menggunakan resapan Dopan daripada SOD (Spin On Dopant)
    ( 2006)
    Uda Hashim
    ;
    Nik Hazura Nik Hamat
    ;
    Fauziyah Salehuddin
    ;
    Ibrahim Ahmad
    ;
    Sutikno
    Pembentukan simpangan cetek ultra merupakan suatu proses yang kritikal dalam fabrikasi peranti-peranti submikron bagi teknologi litar terkamil pada masa hadapan. Di dalam penulisan ini, simulasi proses bagi pembentukan simpangan cetek ultra telah dilaksanakan menggunakan perisian ATHENA dan ATLAS yang terdapat di dalam pakej perisian Silvaco TCAD Tools. Dengan kelebihan tiada resapan bertingkat fana dan pencemaran logam, resapan daripada SOD (Spin On Dopant) terdop tinggi merupakan suatu teknologi yang sesuai bagi pembentukan simpangan cetek ultra. Proses resapan dari SOD disimulasikan seperti model simulasi resapan dari sumber terdop oksida. Fabrikasi diod juga turut disimulasikan bagi menganalisis ciri-ciri elektrik bagi simpangan ini. Keputusan yang diperoleh dipaparkan dalam gambarajah dua dimensi. Keputusan daripada proses simulasi mendapati simpangan cetek P"N berprestasi tinggi dengan kedalaman simpang iaitu 40nm diperoleh menggunakan resapan terma pantas 8150 ke dalam silikon serta mempunyai ciri-ciri diod yang baik dengan ketumpatan arus bocor yang rendah iaitu 0.5nNcm2• Simpangan cetek dengan kedalaman kurang daripada 20nm turut diperolehi tetapi kualiti diod terjejas akibat arus permukaan bocor yang tinggi.
      5  11
  • Publication
    Mediatorless impedance studies with titanium dioxide conjugated gold nanoparticles for hydrogen peroxide detection
    ( 2017)
    Nur Hamidah Abdul Halim
    ;
    Yook Lee
    ;
    Radha Marugan
    ;
    Uda Hashim
    An impedimetric-based biosensor constructed using gold nanoparticles (AuNP) entrapped within titanium dioxide (TiO2) particles for hydrogen peroxide (H2O2) detection is the main feature of this research. The matrix of the biosensor employed the surface of TiO2, which was previously modified with an amine terminal group using 3-Aminopropyltriethoxysilane (APTS) at a low temperature to create a ready to immobilise surface for the biosensor application. Hemoglobin (Hb), which exhibits peroxidase-like activity, was used as the bioreceptor in the biosensor to detect H2O2 in solution. The analysis was carried out using an alternative impedance method, in which the biosensor exhibited a wide linear range response between 1 × 10−4 M and 1.5 × 10−2 M and a limit of detection (LOD) of 1 × 10−5 M without a redox mediator.
      1  14
  • Publication
    Annealing effects on polycrystalline silicon germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
    ( 2022-10)
    Ayu Wazira Azhari
    ;
    Eop, T. S.
    ;
    Dewi Suriyani Che Halin
    ;
    Sopian, K.
    ;
    Uda Hashim
    ;
    Zaidi, S. H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
      1  13