Publication:
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
Date
2022-10
Authors
Ayu Wazira Azhari
Eop, T. S.
Dewi Suriyani Che Halin
Uda Hashim
Sopian, K.
Zaidi, S. H.
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Malaysia Perlis (UniMAP)
Research Projects
Organizational Units
Journal Issue
Abstract
Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
Description
Keywords
Polycrystalline,
Silicon germanium,
Thin film,
Silicon nanostructures,
Photovoltaic