Mohammad Nuzaihan Md Nor
Thumbnail Image
Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022

Research Output

Filters

10
Reset filters

Settings
Now showing 1 - 10 of 10
  • Publication
    Cost effective negative Plenum Cleanroom for Microelectronic Engineering undergraduate
    ( 2005)
    Uda Hashim
    ;
    Zul Azhar Zahid Jamal
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Nur Hamidah Abdul Halim
    he Negative Plenum Cleanroom which is design and built by KUKUM is primarily used for the teaching of the undergraduate microelectronic course. The cleanroom is approximately 115m² in size. The level of cleanliness in the cleanroom ranges from ISO Class 5 (Yellow Room) to ISO Class 8 (Grey Area/Utility Chase). The cleanroom is constructed with a negative plenum to house the fan filter units, which make it different from other commercially available cleanrooms. With negative plenum, maintenance work cost will be reduced and make the cleanroom life longer. The main intention of this project is to expose and teach students to appreciate the stringent cleanroom protocols, health and safety requirement in addition to the formal course works.
  • Publication
    Field-Effect Transistor-based Biosensor Optimization: Single Versus Array Silicon Nanowires Configuration
    ( 2020-01-01)
    Ong C.C.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohd Khairuddin Md Arshad
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    ;
    Rafizatul Fitri Abdullah
    ;
    Mohd Hazmi Mohd Ghazali
    ;
    Tamjis N.
    This paper demonstrated the effect of different number of silicon nanowire transducer channels, in other word single, double, and triple channels towards the performance of field-effect transistor-based biosensor through simulation tool. These silicon nanowire field-effect transistor biosensors were designed and simulated in device simulation modelling tool, Silvaco ATLAS with fixed length, width, and height of the silicon nanowire. Different negatively interface charge density values were applied on the transducer channels’ surface of the biosensors to represent as detected target biomolecules that will bind onto the surface of the transducer regions. Based on the results, more negatively interface charges density values presented on the sensing channels had reduced the electron carrier accumulation at the channel’s interface, therefore, reduced drain current flow between the source and drain terminal. With the increase number of the transducer channels, significant change in drain current for every applied negatively interface charges became more apparent and increased the sensitivity of the biosensor. The triple transducer channels silicon nanowire field-effect transistor biosensor had demonstrated highest sensitivity, that is 2.83 µA/e∙cm2, which indicates it has better response for the detection of interface charges, thus increases chances for transducer channels reaction to the target biomolecules during testing or diagnosis.
  • Publication
    Fabrication of Silicon Nanowire Sensors for Highly Sensitive pH and DNA Hybridization Detection
    ( 2022-08-01)
    Abd Rahman S.F.
    ;
    Yusof N.A.
    ;
    Mohd Khairuddin Md Arshad
    ;
    Uda Hashim
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Hamidon M.N.
    A highly sensitive silicon nanowire (SiNW)-based sensor device was developed using electron beam lithography integrated with complementary metal oxide semiconductor (CMOS) technology. The top-down fabrication approach enables the rapid fabrication of device miniaturization with uniform and strictly controlled geometric and surface properties. This study demonstrates that SiNW devices are well-aligned with different widths and numbers for pH sensing. The device consists of a single nanowire with 60 nm width, exhibiting an ideal pH responsivity (18.26 × 106 Ω/pH), with a good linear relation between the electrical response and a pH level range of 4–10. The optimized SiNW device is employed to detect specific single-stranded deoxyribonucleic acid (ssDNA) molecules. To use the sensing area, the sensor surface was chemically modified using (3-aminopropyl) triethoxysilane and glutaraldehyde, yielding covalently linked nanowire ssDNA adducts. Detection of hybridized DNA works by detecting the changes in the electrical current of the ssDNA-functionalized SiNW sensor, interacting with the targeted ssDNA in a label-free way. The developed biosensor shows selectivity for the complementary target ssDNA with linear detection ranging from 1.0 × 10−12 M to 1.0 × 10−7 M and an attained detection limit of 4.131 × 10−13 M. This indicates that the use of SiNW devices is a promising approach for the applications of ion detection and biomolecules sensing and could serve as a novel biosensor for future biomedical diagnosis.
  • Publication
    Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing
    ( 2021-07-21)
    Tan Y.M.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Norhayati Sabani
    ;
    Teoh X.Y.
    ;
    Mohd Khairuddin Md Arshad
    ;
    Subash Chandra Bose Gopinath
    ;
    Rahman S.F.A.
    ;
    Uda Hashim
    The paper investigated on performance in charge sensing for substrate-gate integrated silicon nanowire field-effect transistor biosensor at different thickness of the buried oxide layer, sandwiched in between the top-silicon and substrate layers. The device structures with different buried oxide thickness ranging from 100 to 200 nm were designed and simulated using the Silvaco ATLAS device simulation software. The increase of buried oxide thickness reduced the strength of induced electric field that contributes to the formation of inversion layer for current flow through the silicon nanowire channel, hence contributed to the increase in threshold voltage. For simulation of charge sensing, the device demonstrated the ability to identify different interface charge values ranging from -5×1010 to -9×1010 e· cm-2 applied on the surface of the silicon nanowire channel to represent target charge biomolecules that bound to the biosensor in actual detection. Significant change in threshold voltage can be observed due to the applied interface charge density values and was evaluated to determine the sensitivity for charge sensing performance. The device shows better performance when designed with buried oxide thickness of 200 nm at sensitivity of 1.151 V/e· cm-2.
  • Publication
    Gold-nanoparticle associated deep eutectic solution mediates early bio detection of ovarian cancer
    ( 2025-01)
    S. Uvambighai Devi
    ;
    Nor Azizah Parmin
    ;
    N. Fareezah Jaapar
    ;
    F. Syakirah Halim
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Muhammad Nur Aiman Uda
    ;
    Voon Chun Hong
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Adilah Ayoib
    ;
    Shahidah Arina Shamsuddin
    ;
    Norizah Abd Karim
    Gold nanoparticles (AuNPs) have indeed been extensively researched in biological and photothermal therapy applications in recent years. This study aims to enhance the sensitivity of biosensors for early detection of ovarian cancer biomarkers by investigating the efficacy of DES-mediated surface functionalization of AuNPs. Additionally, the impact of DES on the stability and dispersion of AuNPs on SiO2 support is assessed to optimize sensor performance. A simple DES-mediated synthesis method for efficient amine surface functionalization of silicon dioxide (SiO2) to incorporate tiny AuNPs for antibody biosensors. Physical characterization [Scanning Electron Microscope (SEM), Ultraviolet-Visible Spectrophotometer (UV-Vis), Fourier Transform Infrared Spectroscopy (FTIR), and 3D Profiler] and electrical characterization (Keithley) have been done to determine the functionalization of the modified IDE surface. SEM analysis indicated the resultant nanoparticles have truncated spherical shapes. There is just a peak recorded by UV-Vis at 504-540 nm with AuNPs due to the formation of monodispersed AuNPs. When the conjugation of DES with samples is measured, the curves are identical in form, and the highest peak after conjugation has remained at 230 nm but the SPR absorption peak becomes narrower and moves toward greater wavelengths, indicating the conjugation between the molecules. Furthermore, when the DES is conjugated with AuNPs, 3-Aminopropyltriethoxysilane (APTES), antibody, and protein, the peaks gradually increased and became narrower, where O-H at 3280 cm-1, C-H at 2809 cm-1 and 2933 cm-1, CH2 at 1448 cm-1, CH3 at 1268 cm-1, C-OH at 1048 cm-1 and 1110 cm-1 and C-N+ at 844 cm-1 as analyzed by FTIR. Moreover, it can be observed that the 3D profilometer revealed a few red-colored areas, which are the portion that protrudes from the IDE surface. Based on the findings, it is possible to infer that this immunosensor does have the prospective to be used in clinical investigations for the precise detection of ovarian cancer or other biomarkers. The capacitance, transmittance, and resistivity profiles of the biosensor clearly distinguished between the antibody immobilization and the affinity binding. The presence of a DES-mediated synthetic approach increased the possibility of supporting different metal nanoparticles on SiO2 as the potential platform for biosensor applications.
  • Publication
    Fabrication of nano and micrometer structures using electron beam and optical mixed lithography process
    ( 2011-01)
    S. F. Abd Rahman
    ;
    Uda Hashim
    ;
    Mohammad Nuzaihan Md Nor
    ;
    M. E. A. Shohini
    In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demostrate this EBL pattern creation is ma-V 2403 which is a negative tone photoresist series, while positive resist PRI-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon, nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP ething followed by micro-sized-contact pads were defined bt photolithography process. The approachICP etching followed by micro-sized -pad were defined by photlithography process. The approach describe in this paper is a mix-and-match techniques uising both conventional photholilthography and advanced nanolithoragraphy, making use of an alignment strategy.
      3  14
  • Publication
    Fabrication of nano and micrometer structures using electron beam and optical mixed lithography process
    ( 2011-01)
    S. F. Abd Rahman
    ;
    Uda Hashim
    ;
    Mohammad Nuzaihan Md Nor
    ;
    M. E. A. Shohini
    In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demostrate this EBL pattern creation is ma-V 2403 which is a negative tone photoresist series, while positive resist PRI-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon, nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP ething followed by micro-sized-contact pads were defined bt photolithography process. The approachICP etching followed by micro-sized -pad were defined by photlithography process. The approach describe in this paper is a mix-and-match techniques uising both conventional photholilthography and advanced nanolithoragraphy, making use of an alignment strategy.
      7  12
  • Publication
    Electrical simulation on silicon nanowire field-effect transistor biosensor at different substrate-gate voltage bias conditions for charge detection
    ( 2022-12)
    X.Y. Teoh
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Y.M.Tan
    ;
    Norhayati Sabani
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohd Khairuddin Md Arshad
    ;
    Ruslinda A. Rahim
    ;
    Nur Hamidah Abdul Halim
    ;
    Ramzan Mat Ayub
    ;
    Uda Hashim
    ;
    M.M. Ibrahim
    In this work, the impact of different substrate-gate voltage bias conditions (below and above the device threshold voltage) on current-voltage characteristics and sensitivity of a silicon nanowire field-effect transistor (SiNW-FET) biosensor was investigated. A 3-dimensional device structure with n-type SiNW channel and a substrate gate electrode was designed and electrically simulated In the Silvaco ATLAS. Next, the SiNW channel was covered with a range of interface charge density to mimic the charged target biomolecule captured by the device. The outcome was translated into a drain current versus interface charge semi-log graph and the device sensitivity was calculated using the linear regression curve’s slope of the plotted data. The device’s electrical characteristic shown higher generation of output drain current values with the increase of negative substrate-gate voltage bias due to the hole carriers’ accumulation that forms a conduction channel in the SiNW. Application of higher negative interface charge density increased the change in drain current, with the device biased with higher substrate-gate voltage shows more significant change in drain current. The device sensitivity increased when biased with higher substrate-gate voltage with highest sensitivity is 75.12 nA/dec at substrate-gate voltage bias of –1.00 V.
      2  17
  • Publication
    The impact of silicon nanowire transducer channel width on field-effect transistor biosensor performance
    ( 2021-05-03)
    Abdullah R.F.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohd Khairuddin Md Arshad
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Subash Chandra Bose Gopinath
    ;
    Uda Hashim
    ;
    Ong C.C.
    ;
    Tamjis N.
    ;
    Ghazali M.H.M.
    This paper reported on performance assessment of a field-effect transistor-based biosensor with different widths of the silicon nanowire transducer channel. Silvaco ATLAS device simulation software was used to model the device design with three different channel widths, which are 100, 150, and 200 nm. In this simulation, the bounded target biomolecules during actual detection using the biosensor were represented by several negative interface charge density values applied on the surface of the transducer channel. Increase in accumulation of hole carriers beneath the channel's surface was observed due to the availability of negative interface charges on the surface, hence increased the output drain current. Furthermore, width reduction of the device's channel had allowed more significant change in drain current due to application of different interface charge density values and increased the device's sensitivity. Among the simulated devices, silicon nanowire field-effect transistor-based biosensor with transducer channel width of 100 nm had shown highest sensitivity (-56.45 nA/e.cm2) with lowest interface charge density detection (2.79u1010 e/cm-2), which means it enhances the interface charge detection by providing better response and allows lower limit of detection. Therefore, in actual detection, possibility for reaction of the transducer channel to the specific target biomolecule can be increased.
      1
  • Publication
    Fabrication of silicon nanowire sensors for highly sensitive pH and DNA hybridization detection
    ( 2022)
    Siti Fatimah Abd Rahman
    ;
    Nor Azah Yusof
    ;
    Mohd Khairuddin Md Arshad
    ;
    Uda Hashim
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohd Nizar Hamidon
    A highly sensitive silicon nanowire (SiNW)-based sensor device was developed using electron beam lithography integrated with complementary metal oxide semiconductor (CMOS) technology. The top-down fabrication approach enables the rapid fabrication of device miniaturization with uniform and strictly controlled geometric and surface properties. This study demonstrates that SiNW devices are well-aligned with different widths and numbers for pH sensing. The device consists of a single nanowire with 60 nm width, exhibiting an ideal pH responsivity (18.26 × 106 Ω/pH), with a good linear relation between the electrical response and a pH level range of 4–10. The optimized SiNW device is employed to detect specific single-stranded deoxyribonucleic acid (ssDNA) molecules. To use the sensing area, the sensor surface was chemically modified using (3-aminopropyl) triethoxysilane and glutaraldehyde, yielding covalently linked nanowire ssDNA adducts. Detection of hybridized DNA works by detecting the changes in the electrical current of the ssDNA-functionalized SiNW sensor, interacting with the targeted ssDNA in a label-free way. The developed biosensor shows selectivity for the complementary target ssDNA with linear detection ranging from 1.0 × 10−12 M to 1.0 × 10−7 M and an attained detection limit of 4.131 × 10−13 M. This indicates that the use of SiNW devices is a promising approach for the applications of ion detection and biomolecules sensing and could serve as a novel biosensor for future biomedical diagnosis.
      1  18