In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demostrate this EBL pattern creation is ma-V 2403 which is a negative tone photoresist series, while positive resist PRI-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon, nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP ething followed by micro-sized-contact pads were defined bt photolithography process. The approachICP etching followed by micro-sized -pad were defined by photlithography process. The approach describe in this paper is a mix-and-match techniques uising both conventional photholilthography and advanced nanolithoragraphy, making use of an alignment strategy.
