Ruslinda A. Rahim
Thumbnail Image
Preferred name
Ruslinda A. Rahim
Official Name
Ruslinda, A. Rahim
Alternative Name
Rahim, R. A.
Ruslinda, A. Rahim
A. Rahim, Ruslinda
Rahim Ruslinda, A.
Ruslinda, Abdul Rahim
Rahim, Ruslinda Abdul
Ruslinda, A. R.
Main Affiliation
Scopus Author ID
57194735807

Research Output

Filters

1
12
Reset filters

Settings
Now showing 1 - 10 of 12
  • Publication
    Field-Effect Transistor-based Biosensor Optimization: Single Versus Array Silicon Nanowires Configuration
    ( 2020-01-01)
    Ong C.C.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohd Khairuddin Md Arshad
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    ;
    Rafizatul Fitri Abdullah
    ;
    Mohd Hazmi Mohd Ghazali
    ;
    Tamjis N.
    This paper demonstrated the effect of different number of silicon nanowire transducer channels, in other word single, double, and triple channels towards the performance of field-effect transistor-based biosensor through simulation tool. These silicon nanowire field-effect transistor biosensors were designed and simulated in device simulation modelling tool, Silvaco ATLAS with fixed length, width, and height of the silicon nanowire. Different negatively interface charge density values were applied on the transducer channels’ surface of the biosensors to represent as detected target biomolecules that will bind onto the surface of the transducer regions. Based on the results, more negatively interface charges density values presented on the sensing channels had reduced the electron carrier accumulation at the channel’s interface, therefore, reduced drain current flow between the source and drain terminal. With the increase number of the transducer channels, significant change in drain current for every applied negatively interface charges became more apparent and increased the sensitivity of the biosensor. The triple transducer channels silicon nanowire field-effect transistor biosensor had demonstrated highest sensitivity, that is 2.83 µA/e∙cm2, which indicates it has better response for the detection of interface charges, thus increases chances for transducer channels reaction to the target biomolecules during testing or diagnosis.
  • Publication
    Facile electrical DNA genosensor for human papillomavirus (HPV 58) for early detection of cervical cancer
    ( 2023-07)
    F. Nadhirah Jaapar
    ;
    Nor Azizah Parmin
    ;
    Nur Hamidah Abdul Halim
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Ruslinda A. Rahim
    ;
    Sh. Nadzirah
    ;
    Voon Chun Hong
    ;
    Muhammad Nur Aiman Uda
    ;
    Wei Chern Ang
    ;
    Iffah Izzati Zakaria
    ;
    Zulida Rejali
    ;
    Amilia Afzan
    ;
    Azrul Azlan Hamzah
    ;
    Chang Fu Dee
    ;
    F. Syakirah Halim
    For decades, a Pap smear test has been applied as a conventional method in detecting Human Papillomavirus caused cervical cancer. False-positive results were also recorded while using it as conventional method. Current biosensor such as Hybrid (II) Capture resulted in higher time consumption and cost. s Meanwhile, in this study we provided facile, mini, rapid, highly sensitive, eco-friendly, and cost-effective sensing system focusing on HPV strain 58 (HPV58) in a nano-size lab-on-chip technology genosensor. 30-mer of virus ssDNA designed and analyzed as a probe via bioinformatics tools such as GenBank, Basic Local Alignment Searching Tools (BLAST) and ClustalW. Nanotechnology-developed colloidal Gold-nanoparticles (AuNPs) are used in the biosensor fabrication to produce high stability and electron efficient transmission during electrical measurement. AuNPs-APTES modified on active sites of IDEs, followed by immobilization of specific probe ssDNA for HPV 58. Hydrogen binding during hybridization with its target produce electrical signals measured by KEITHLEY 2450 (Source Meter). The genosensor validated with different types of targets such as complimentary, non-complementary and single mismatch oligonucleotides. The serial dilution of target concentration has been experimented triplicate (n=3) range from 1fM to 10μM. The slope of calibration curve resulted 2.389E-0 AM-1 with regression coefficient (R2) = 0.97535.
  • Publication
    Facile Electrical DNA Genosensor for Human Papillomavirus (HPV 58) for Early Detection of Cervical Cancer
    ( 2023-07-01)
    Jaapar F.N.
    ;
    Nor Azizah Parmin
    ;
    Halim N.H.A.
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Ruslinda A. Rahim
    ;
    Nadzirah S.
    ;
    Voon Chun Hong
    ;
    Muhammad Nur Aiman Uda
    ;
    Ang W.C.
    ;
    Zakaria I.I.
    ;
    Rejali Z.
    ;
    Afzan A.
    ;
    Hamzah A.A.
    ;
    Dee C.F.
    ;
    Halim F.S.
    For decades, a Pap smear test has been applied as a conventional method in detecting Human Papillomavirus caused cervical cancer. False-positive results were also recorded while using it as conventional method. Current biosensor such as Hybrid (II) Capture resulted in higher time consumption and cost. s Meanwhile, in this study we provided facile, mini, rapid, highly sensitive, eco-friendly, and cost-effective sensing system focusing on HPV strain 58 (HPV58) in a nano-size lab-on-chip technology genosensor. 30-mer of virus ssDNA designed and analyzed as a probe via bioinformatics tools such as GenBank, Basic Local Alignment Searching Tools (BLAST) and ClustalW. Nanotechnology-developed colloidal Gold-nanoparticles (AuNPs) are used in the biosensor fabrication to produce high stability and electron efficient transmission during electrical measurement. AuNPs-APTES modified on active sites of IDEs, followed by immobilization of specific probe ssDNA for HPV 58. Hydrogen binding during hybridization with its target produce electrical signals measured by KEITHLEY 2450 (Source Meter). The genosensor validated with different types of targets such as complimentary, non-complementary and single mismatch oligonucleotides. The serial dilution of target concentration has been experimented triplicate (n=3) range from 1fM to 10µM. The slope of calibration curve resulted 2.389E-0 AM-1 with regression coefficient (R2) = 0.97535.
  • Publication
    Designing DNA probe from human Papillomavirus (HPV) 58 in E6 region as biosensing element for development of biosensor
    ( 2024-03-21)
    Jaapar N.F.
    ;
    Nor Azizah Parmin
    ;
    Halim N.H.A.
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Ruslinda A. Rahim
    ;
    Nadzirah S.
    ;
    Voon Chun Hong
    ;
    Muhammad Nur Aiman Uda
    ;
    Ang W.C.
    ;
    Zakaria I.I.
    ;
    Rejali Z.
    ;
    Afzan A.
    ;
    Hamzah A.A.
    ;
    Dee C.F.
    ;
    Halim F.S.
    Globally, second leading cause of death for women is a Cervical Cancer. CC is caused by infection of Human Papillomavirus (HPV). HPV strains 16 (50.8%), 18 (17.6%), and 58 (2.6%) became the most leading strains of infection in Malaysia. Recently, a study showed that HPV 58 was rare worldwide but famous in Asia countries including Malaysia. However, detection the significance of HPV-58 in women has not been studied extensively because of rare case compared to HPV 16 and 18. HPV-58 is commonly found in East Asia, but infrequently worldwide, due to changes in the environment of viruses and humans. Detailed biological knowledge is crucial for the development of effective countermeasures, diagnostic tests, vaccines and antiviral drugs against the HPV. The oligonucleotide sequences of HPV 58 in E6 region have been analysed between 24-35 mer in order to maintain the specificity and selectivity. The percentage of similarities between the coding sequences has developed with 66.7% of GC content. The DNA probe of HPV 58 was 5'GGG CGC TGT GCA GTG TGT TGG AGA CCC CGA3' with 30 mer of oligonucleotides. The important of E6 region for developing the coding sequence as it involved in the DNA reproduction, transcription, translation regulation and transformation of HPV genome. Phylogenetic trees were then constructed by Neighbour-Joining and the Kimura 2-parameters methods, followed by an analysis of selection pressures acting on the E6/E7 genes by ebi ac uk tools.
      20  2
  • Publication
    Electrical simulation on silicon nanowire field-effect transistor biosensor at different substrate-gate voltage bias conditions for charge detection
    ( 2022-12)
    X.Y. Teoh
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Y.M.Tan
    ;
    Norhayati Sabani
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohd Khairuddin Md Arshad
    ;
    Ruslinda A. Rahim
    ;
    Nur Hamidah Abdul Halim
    ;
    Ramzan Mat Ayub
    ;
    Uda Hashim
    ;
    M.M. Ibrahim
    In this work, the impact of different substrate-gate voltage bias conditions (below and above the device threshold voltage) on current-voltage characteristics and sensitivity of a silicon nanowire field-effect transistor (SiNW-FET) biosensor was investigated. A 3-dimensional device structure with n-type SiNW channel and a substrate gate electrode was designed and electrically simulated In the Silvaco ATLAS. Next, the SiNW channel was covered with a range of interface charge density to mimic the charged target biomolecule captured by the device. The outcome was translated into a drain current versus interface charge semi-log graph and the device sensitivity was calculated using the linear regression curve’s slope of the plotted data. The device’s electrical characteristic shown higher generation of output drain current values with the increase of negative substrate-gate voltage bias due to the hole carriers’ accumulation that forms a conduction channel in the SiNW. Application of higher negative interface charge density increased the change in drain current, with the device biased with higher substrate-gate voltage shows more significant change in drain current. The device sensitivity increased when biased with higher substrate-gate voltage with highest sensitivity is 75.12 nA/dec at substrate-gate voltage bias of –1.00 V.
      3  62
  • Publication
    Formation of polypropylene nanocomposite joint using silicon carbide nanowhiskers as novel susceptor for microwave welding
    ( 2023-05-01)
    Foong P.Y.
    ;
    Voon Chun Hong
    ;
    Lim B.Y.
    ;
    Teh P.L.
    ;
    Mohd Afendi Rojan
    ;
    Subash Chandra Bose Gopinath
    ;
    Mohd Khairuddin Md Arshad
    ;
    Nor Azizah Parmin
    ;
    Low F.W.
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    Up to present, no study has reported on the use of silicon carbide nanomaterials (SiCNMs) as susceptor for microwave welding of thermoplastics. Therefore, in this study, silicon carbide nanowhiskers (SiCNWs) was attempted as the microwave susceptor for the microwave welding of polypropylene (PP). It was observed that SiCNWs are capable of absorbing microwave and converting them into heat, leading to a sharp increase in temperature until it reaches the melting point of PP substrates. The microwave welded joint is formed after the molten PP at the interface between PP substrates is cooled under pressure. The effect of microwave heating duration and solid loading of SiCNWs suspension was studied and reported. The formation mechanism of SiCNWs reinforced PP welded joint was proposed in this study. With these remarkable advantages of microwave welding and enhanced mechanical properties of the welded joint, it is believed that this study can provide a new insight into welding of thermoplastic and material processing through short-term microwave heating.
      26  1
  • Publication
    Effective synthesis of silicon carbide nanotubes by microwave heating of blended silicon dioxide and multi-walled carbon nanotube
    ( 2017)
    Voo Chung Sung Tony
    ;
    Voon Chun Hong
    ;
    Lee Chang Chuan
    ;
    Lim Bee Ying
    ;
    Subash Chandra Bose Gopinath
    ;
    Foo Kai Loong
    ;
    Mohd Khairuddin Md Arshad
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    ;
    Nashaain Mohd Nordin
    ;
    Yarub Al-Douri
    Silicon carbide nanotube (SiCNTs) has been proven as a suitable material for wide applications in high power, elevated temperature and harsh environment. For the first time, we reported in this article an effective synthesis of SiCNTs by microwave heating of SiO2 and MWCNTs in molar ratio of 1:1, 1:3, 1:5 and 1:7. Blend of SiO2 and MWCNTs in the molar ratio of 1:3 was proven to be the most suitable for the high yield synthesis of β-SiCNTs as confirmed by X-ray diffraction pattern. Only SiCNTs were observed from the blend of MWCNTs and SiO2 in the molar ratio of 1:3 from field emission scanning electron microscopy imaging. High magnification transmission electron microscopy showed that tubular structure of MWCNT was preserved with the inter-planar spacing of 0.25 nm. Absorption bands of Si-C bond were detected at 803 cm-1 in Fourier transform infrared spectrum. Thermal gravimetric analysis revealed that SiCNTs from ratio of 1:3 showed the lowest weight loss. Thus, our synthetic process indicates high yield conversion of SiO2 and MWCNTs to SiCNTs was achieved for blend of SiO2 and MWCNTs in molar ratio of 1:3.
      4  32
  • Publication
    Thickness dependent nanostructural, morphological, optical and impedometric analyses of Zinc Oxide-Gold hybrids : Nanoparticle to thin film
    ( 2015)
    Veeradasan Perumal
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    R. Haarindraprasad
    ;
    Liu Wei Wen
    ;
    Prabakaran A/L Poopalan
    ;
    S. R. Balakrishnan
    ;
    V. Thivina
    ;
    Ruslinda A. Rahim
    ;
    Yogendra Kumar Mishra
    The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Au x (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5–10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows an increasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications.
      1  10
  • Publication
    Thickness dependent nanostructural, morphological, optical and impedometric analyses of Zinc Oxide-Gold Hybrids: Nanoparticle to thin film
    ( 2015)
    Veeradasan Perumal
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    R. Haarindraprasad
    ;
    Liu Wei Wen
    ;
    Prabakaran A/L Poopalan
    ;
    S. R. Balakrishnan
    ;
    V. Thivina
    ;
    Ruslinda A. Rahim
    The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Aux (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5–10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows a decreasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications.
      2  17
  • Publication
    Dielectric properties and microwave absorbing properties of silicon carbide nanoparticles and silicon carbide nanowhiskers
    ( 2023-04)
    Phey Yee Foong
    ;
    Voon Chun Hong
    ;
    Lim Bee Ying
    ;
    Teh Pei Leng
    ;
    Mohd Afendi Rojan
    ;
    Subash Chandra Bose Gopinath
    ;
    Nor Azizah Parmin
    ;
    Mohd Khairuddin Md Arshad
    ;
    Yeng Seng Lee
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    Silicon carbide (SiC) is well known for their outstanding microwave absorbing properties. SiC nanomaterials (SiCNMs) are expected to have better microwave absorption performance due to their high specific surface area. To date, no study was reported to compare the dielectric properties and microwave absorbing properties of different type of SiCNMs. Therefore, the objective of this paper is to compare the dielectric properties and microwave absorption properties of different types of SiCNMs. In this paper, SiC nanoparticles (SiCNPs) and SiC nanowhiskers (SiCNWs) were characterised using SEM and XRD. In addition, their dielectric properties and microwave absorbing properties were measured using network analyser and transmission line theory. It was found that SiCNWs achieved higher dielectric constant and loss factor which are and εr’ =17.94 and εr″ = 2.64 compared to SiCNPs that only achieved εr’ = 2.83 and εr″ = 0.71. For microwave absorbing properties, SiCNWs and SiCNPs attained minimum reflection loss of -10.41 dB and -6.83 dB at 5.68 GHz and 17.68 GHz, respectively. The minimum reflection loss of SiCNPs and SiCNWs obtained in this study is much lower than the nanometer-SiC reported previously. These results suggested that SiCNWs can be an ideal candidate of microwave susceptors for various microwave applications
      1  13