Prabakaran A/L Poopalan
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Prabakaran A/L Poopalan
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Prabakaran, A/L Poopalan
Alternative Name
Poopalan, P.
Poopalan, Prabakaran A.L.
Poopalan, Prabakaran
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Scopus Author ID
7003686974

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  • Publication
    Thickness dependent nanostructural, morphological, optical and impedometric analyses of Zinc Oxide-Gold hybrids : Nanoparticle to thin film
    ( 2015)
    Veeradasan Perumal
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    R. Haarindraprasad
    ;
    Liu Wei Wen
    ;
    Prabakaran A/L Poopalan
    ;
    S. R. Balakrishnan
    ;
    V. Thivina
    ;
    Ruslinda A. Rahim
    ;
    Yogendra Kumar Mishra
    The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Au x (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5–10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows an increasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications.
  • Publication
    Low temperature annealed zinc oxide nanostructured thin film-based transducers: Characterization for sensing applications
    ( 2015)
    R. Haarindraprasad
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Muhammad Kashif
    ;
    P. Veeradasan
    ;
    S. R. Balakrishnan
    ;
    Foo Kai Loong
    ;
    Prabakaran A/L Poopalan
    The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH.
  • Publication
    A Point-of-Care immunosensor for human chorionic gonadotropin in clinical urine samples using a cuneated polysilicon nanogap Lab-on-Chip
    ( 2015)
    S. R. Balakrishnan
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    Prabakaran A/L Poopalan
    ;
    H. R. Ramayya
    ;
    M. Iqbal Omar
    ;
    R. Haarindraprasad
    ;
    P. Veeradasan
    Human chorionic gonadotropin (hCG), a glycoprotein hormone secreted from the placenta, is a key molecule that indicates pregnancy. Here, we have designed a cost-effective, label-free, in situ point-of-care (POC) immunosensor to estimate hCG using a cuneated 25 nm polysilicon nanogap electrode. A tiny chip with the dimensions of 20.5 × 12.5 mm was fabricated using conventional lithography and size expansion techniques. Furthermore, the sensing surface was functionalized by (3-aminopropyl)triethoxysilane and quantitatively measured the variations in hCG levels from clinically obtained human urine samples. The dielectric properties of the present sensor are shown with a capacitance above 40 nF for samples from pregnant women; it was lower with samples from non-pregnant women. Furthermore, it has been proven that our sensor has a wide linear range of detection, as a sensitivity of 835.88 μA mIU-1 ml-2 cm-2 was attained, and the detection limit was 0.28 mIU/ml (27.78 pg/ml). The dissociation constant Kd of the specific antigen binding to the anti-hCG was calculated as 2.23 ± 0.66 mIU, and the maximum number of binding sites per antigen was Bmax = 22.54 ± 1.46 mIU. The sensing system shown here, with a narrow nanogap, is suitable for high-throughput POC diagnosis, and a single injection can obtain triplicate data or parallel analyses of different targets.
  • Publication
    Sol-gel synthesis and characterization of Ba1-xGdxTiO3+δ thin films on SiO2/Si substrates using spin-coating technique
    ( 2017)
    Yen Chin TEH
    ;
    Ala’eddin A. SAIF
    ;
    Prabakaran A/L Poopalan
    Ba1-xGdxTiO3+δ, at x = 0, 0.05, 0.1, 0.15, 0.2, (BGT) thin films have been fabricated on SiO2/Si substrate using Sol-Gel method. The microstructure and surface morphology of the fabricated films have been investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD results show that the fabricated films are crystalline with perovskite structure. There is a shifting of the preferred peak at 31.5o to a higher angle as the doping ratio increases suggesting a distortion lattice exists in the films, which could be due to the substitution of Gd3+ ions into Ba-site. The decreasing of lattice constants confirms the substitution of Gd3+ in BaTiO3 lattice structure. The microstrain and dislocation density are found to be increased with the increase of Gd3+ doping, which attributed to the reduction of lattice volume that due to the ionic size mismatch effect. The AFM results show decreasing trend in both average grain size and roughness parameters. Therefore, the microstructure and surface morphology of BGT samples is strongly dependent on the Gd3+ doping concentration that mainly due to the difference ionic radius substitution.
  • Publication
    Impact of annealing temperature on electrical properties of sol-gel Ba0.90Gd0.10TiO3 thin films
    ( 2023)
    Ala'eddin Ahmad SAIF
    ;
    Yen Chin TEH
    ;
    Prabakaran A/L Poopalan
    Ba0.90Gd0.10TiO3 (BGT) thin films have been fabricated in MFM configuration via sol-gel technique at the different annealing temperature. The dielectric parameters of the films are measured using Impedance Analyzer as a function of frequency. It is found that, at frequency 1 kHz, the measured value of e increases from 57 to 264 as the annealing temperature increases from 600 °C to 900 °C, which is correlated to the improved crystallinity and grain size increment. The ferroelectric hysteresis of the films is analyzed using Sawyer-Tower circuit that shows an enhancement for the ferroelectric properties with annealing temperature, which is also confirmed using C-V characteristics. The leakage current of the films is evaluated via Semiconductor Parameter Analyzer (SPA), which shows that at a certain electric field, the leakage current density increases as the annealing temperature increases, that is attributed to the crystallinity and grain size improvement. The conduction mechanism of the films is deeply investigated through different models to find out that the space charge limited conduction (SCLC) mechanism is the controlling conduction process.
  • Publication
    Thickness dependent nanostructural, morphological, optical and impedometric analyses of Zinc Oxide-Gold Hybrids: Nanoparticle to thin film
    ( 2015)
    Veeradasan Perumal
    ;
    Uda Hashim
    ;
    Subash Chandra Bose Gopinath
    ;
    R. Haarindraprasad
    ;
    Liu Wei Wen
    ;
    Prabakaran A/L Poopalan
    ;
    S. R. Balakrishnan
    ;
    V. Thivina
    ;
    Ruslinda A. Rahim
    The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Aux (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5–10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows a decreasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications.
  • Publication
    Frequency dependent electrical properties of ferroelectric Ba₀.₈Sr₀.₂TiO₃ thin film
    ( 1970)
    Ala’eddin A. SAIF
    ;
    Zul Azhar Zahid Jamal
    ;
    Zaliman Sauli
    ;
    Prabakaran A/L Poopalan
    The frequency dependent electrical parameters, such as impedance, electric modulus, dielectric constant and AC conductivity for ferroelectric Ba₀.₈Sr₀.₂TiO₃ thin film have been investigated within the range of 1 Hz and 106 Hz at room temperature. Z* plane shows two regions corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes process. M" versus frequency plot reveals a relaxation peak, which is not observed in the ε″ plot and it has been found that this peak is a non-Debye-type. The frequency dependent conductivity plot shows three regions of conduction processes, i. e., a low-frequency region due to DC conduction, a mid-frequency region due to translational hopping motions and a high-frequency region due to localized hopping and/or reorientational motion.http://dx.doi.org/10.5755/j01.ms.17.2.490
  • Publication
    Analysis of an electrically induced optical waveguide in a c-axis barium titanate thin film
    ( 2021-12)
    Arif Mawardi Ismail
    ;
    Prabakaran A/L Poopalan
    ;
    Nurjuliana Juhari
    ;
    Mohd. Azarulsani Md. Azidin
    In this paper, we report our analysis of an electrically generated optical waveguide in a 𝑐- axis barium titanate (BTO) thin film. The waveguide consists of a BTO thin film which is sandwiched between two electrodes. The thin film forms a waveguide when a voltage difference is applied across the electrodes. It is found that the formed waveguide supports both TE and TM modes, with TM modes more tightly confined within the waveguide than TE modes. The possibility to turn the waveguide on and off simply by turning the electric field on and off may prove useful for optical switching.
  • Publication
    Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications
    ( 2017)
    Yen Chin Teh
    ;
    Ala’eddin A. Saif
    ;
    Zul Azhar Zahid Jamal
    ;
    Prabakaran A/L Poopalan
    Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.
  • Publication
    Surface charge transduction enhancement on nano-silica and - Alumina integrated planar electrode for hybrid DNA determination
    ( 2021-06-01)
    Ramanathan S.
    ;
    Prabakaran A/L Poopalan
    ;
    Subash Chandra Bose Gopinath
    ;
    Mohd Khairuddin Md Arshad
    ;
    Anbu P.
    ;
    Lakshmipriya T.
    ;
    Salimi M.N.
    ;
    Pandian K.
    This study represents the surface charge transduction, an efficient and inexpensive biosensor with modifications by silica-alumina entities and determination of gene sequence hybridization. The sensing surface was made by the planar aluminium interdigitated electrode on silicon substrate. Silica and alumina nanoparticles were engineered on the planar transducer surface and the device sensitivity was investigated. The morphology of silica and alumina particles was characterized through the high-resolution election microscopic analyses and revealed the spherical shaped nanoscale sizes at the range of 45–100 nm. The elemental compositions of silica and alumina nanomaterial were affirmed through energy disperse spectroscopy as prominent peaks of Si, Al and O were observed. Selected area electron diffraction analysis of silica and alumina justified their crystalline and amorphous nature, respectively. XRD analysis revealed the expending cristobalite state of silica crystal and γ-alumina for planar electrode surface enhancement. Fourier transform infrared spectroscopy peak observed at 1094 cm−1 revealed the asymmetric stretching of silica nanoparticles whereas the projecting peak observed at 806 cm−1. Additionally, Al–O stretch and Al–O–Al bending modes were justified with the peaks at 585 and 825 cm−1, respectively. Band gap values of silica and alumina computed were 6.75 eV and 3.20 eV, respectively. The results of DNA probe immobilization and complementation have affirmed that silica modified transducer shows the lowest detection at 10 aM whereas alumina modified transducer displayed insignificant current signal and failed to detect DNA hybridization. To investigate the effect of silica entity and its nanocomposite in detecting DNA hybridization, aluminosilicate nanocomposite was deposited on transducer and attained highly sensitive gene detection. Based on the coefficient regression value, aluminosilicate nanocomposite modified planar transducer has shown good device sensitivity (R2 = 0.96) in contrast to silica and alumina entities.