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Uda Hashim
Preferred name
Uda Hashim
Official Name
Uda, Hashim
Alternative Name
Hashimb, U.
Hashim, Uda
Hashim, U.
Uda, Hashim
Main Affiliation
Scopus Author ID
22633937800
Researcher ID
CVC-6955-2022
Now showing
1 - 4 of 4
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PublicationAluminium interdigitated electrode with 5.0 μm gap for electrolytic scooting( 2024-06)
;Ismail Saad ;G. Yashni ;Nur Hulwani Ibrahim ;N. ParimonM. F. H. RaniThe goal of the research project is to design, fabricate, and characterize an extremely sensitive biosensor for use in healthcare. Using AutoCAD software, a novel IDE pattern with a 5 μm finger gap was created. Conventional photolithography and regular CMOS technology were used in the fabrication process. A 3D nano profiler, scanning electron microscopy (SEM), high-power microscopy (HPM), and low-power microscopy (LPM) were used to physically characterize the manufactured IDE. Chemical testing was done using several pH buffer solutions, and electrical validation was performed using I-V measurements. The Al IDE was produced, with a tolerance of 0.1 μm between the fabricated IDEs and the design mask. Electrical measurements verified the flawless fabrication of the IDE, and the device's repeatability was validated by the outcomes of comparable IDE samples. For each pH buffer solution, a modest additional volume of 2 μl was used to quantitatively detect slight current fluctuations in the microampere range. Through pH calibration for advanced applications in the realm of chemical sensors using an amperometric method, this research study has verified the chemical behavior of the IDE. -
PublicationAdvancing COVID-19 detection high-performance RNA biosensing via electrical interactions( 2024-06)
;Muhammad Nur Afnan Uda ;Nur Hulwani Ibrahim ;Chai Chang YiiLorita AngelineThis research paper investigated the detection of COVID-19 using an Aluminum Interdigitated Electrode (Al-IDE) sensor based on electrical conductivity. The silanization process involved the functionalization step, employing (3-Aminopropyl) triethoxysilane (APTES), while the immobilization process was facilitated by the RNA Probe specific to COVID-19. To verify its specificity in detection, the functionalized biosensor was tested against single-base mismatches, non-complementary sequences, and complementary sequences. The physical characteristics of the Al-IDE biosensor were examined using both low-power microscopy (LPM) and high-power microscopy (HPM). Additionally, the morphological properties of the biosensor were assessed using atomic force microscopy (AFM). To assess its diagnostic potential, the biosensor's sensitivity was evaluated by exposing it to a range of complementary targets, spanning from 1 femtomolar (fM) to 1 micromolar (μM). The current-voltage (I-V) characteristics of the biosensor were meticulously analyzed at each stage of functionalization bare Al-IDE, silanization, immobilization, and hybridization. This I-V characterization was carried out using a picoammeter voltage source (Keithley 2450), Kickstart software, and a probe station. The results confirmed the biosensor's capability to effectively detect COVID-19 targets within the nanoampere concentration range, demonstrating its success in detecting specific COVID-19 targets at the nanoampere level. -
PublicationFabrication of silicon nanowire sensors for highly sensitive pH and DNA hybridization detection( 2022)
;Siti Fatimah Abd Rahman ;Nor Azah YusofMohd Nizar HamidonA highly sensitive silicon nanowire (SiNW)-based sensor device was developed using electron beam lithography integrated with complementary metal oxide semiconductor (CMOS) technology. The top-down fabrication approach enables the rapid fabrication of device miniaturization with uniform and strictly controlled geometric and surface properties. This study demonstrates that SiNW devices are well-aligned with different widths and numbers for pH sensing. The device consists of a single nanowire with 60 nm width, exhibiting an ideal pH responsivity (18.26 × 106 Ω/pH), with a good linear relation between the electrical response and a pH level range of 4–10. The optimized SiNW device is employed to detect specific single-stranded deoxyribonucleic acid (ssDNA) molecules. To use the sensing area, the sensor surface was chemically modified using (3-aminopropyl) triethoxysilane and glutaraldehyde, yielding covalently linked nanowire ssDNA adducts. Detection of hybridized DNA works by detecting the changes in the electrical current of the ssDNA-functionalized SiNW sensor, interacting with the targeted ssDNA in a label-free way. The developed biosensor shows selectivity for the complementary target ssDNA with linear detection ranging from 1.0 × 10−12 M to 1.0 × 10−7 M and an attained detection limit of 4.131 × 10−13 M. This indicates that the use of SiNW devices is a promising approach for the applications of ion detection and biomolecules sensing and could serve as a novel biosensor for future biomedical diagnosis.18 1 -
PublicationElectrical simulation on silicon nanowire field-effect transistor biosensor at different substrate-gate voltage bias conditions for charge detection( 2022-12)
;X.Y. Teoh ;Y.M.TanM.M. IbrahimIn this work, the impact of different substrate-gate voltage bias conditions (below and above the device threshold voltage) on current-voltage characteristics and sensitivity of a silicon nanowire field-effect transistor (SiNW-FET) biosensor was investigated. A 3-dimensional device structure with n-type SiNW channel and a substrate gate electrode was designed and electrically simulated In the Silvaco ATLAS. Next, the SiNW channel was covered with a range of interface charge density to mimic the charged target biomolecule captured by the device. The outcome was translated into a drain current versus interface charge semi-log graph and the device sensitivity was calculated using the linear regression curve’s slope of the plotted data. The device’s electrical characteristic shown higher generation of output drain current values with the increase of negative substrate-gate voltage bias due to the hole carriers’ accumulation that forms a conduction channel in the SiNW. Application of higher negative interface charge density increased the change in drain current, with the device biased with higher substrate-gate voltage shows more significant change in drain current. The device sensitivity increased when biased with higher substrate-gate voltage with highest sensitivity is 75.12 nA/dec at substrate-gate voltage bias of –1.00 V.2 17