Uda Hashim
Thumbnail Image
Preferred name
Uda Hashim
Official Name
Uda, Hashim
Alternative Name
Hashimb, U.
Hashim, Uda
Hashim, U.
Uda, Hashim
Main Affiliation
Scopus Author ID
22633937800
Researcher ID
CVC-6955-2022

Research Output

Filters

3
Reset filters

Settings
Now showing 1 - 3 of 3
  • Publication
    SOI based nanowire single-electron transistors: design, simulation and process development
    ( 2008-01)
    Uda Hashim
    ;
    A. Rasmi
    ;
    Samsudi Sakrani
    One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistors which operate by means of oneby-one electron transfer, is relatively small and consume very low power and suitable for achieving higher levels of integration. In this research, the four masks step are involved namely source and drain mask, Polysilicon gate mask, contact mask, and metal mask. The masks were designed using ELPHY Quantum GDS II Editor with a nanowire length and nanowire width of approximately 0.10µm and 0.010 µm respectively. In addition, the process flow development of SET and the process and device simulation of SET are also explained in this paper. The Synopsys TCAD simulation tools are utilized for process and device simulation. The results from the device simulation showed that the final SET was operating at room temperature (300K) with a capacitance estimated around 0.4297 aF.
  • Publication
    Modular architecture of a non-contact pinch actuation micropump
    ( 2012)
    Pei Song Chee
    ;
    Rashidah Arsat
    ;
    Tijjani Adam
    ;
    Uda Hashim
    ;
    Ruzairi Abdul Rahim
    ;
    Pei Ling Leow
    This paper demonstrates a modular architecture of a non-contact actuation micropump setup. Rapid hot embossing prototyping was employed in micropump fabrication by using printed circuit board (PCB) as a mold material in polymer casting. Actuator-membrane gap separation was studied, with experimental investigation of three separation distances: 2.0 mm, 2.5 mm and 3.5 mm. To enhance the micropump performance, interaction surface area between plunger and membrane was modeled via finite element analysis (FEA). The micropump was evaluated against two frequency ranges, which comprised a low driving frequency range (0–5 Hz, with 0.5 Hz step increments) and a nominal frequency range (0–80 Hz, with 10 Hz per step increments). The low range frequency features a linear relationship of flow rate with the operating frequency function, while two magnitude peaks were captured in the flow rate and back pressure characteristic in the nominal frequency range. Repeatability and reliability tests conducted suggest the pump performed at a maximum flow rate of 5.78 mL/min at 65 Hz and a backpressure of 1.35 kPa at 60 Hz.
  • Publication
    Application of synopsys' taurus TCAD in developing CMOS fabrication process modules
    ( 2009-01)
    Uda Hashim
    ;
    Chin Seng Fatt
    ;
    S. Sakrani
    Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and devics operation. TCAD has two major functions namely process simulation and device simulation. It performs the semiconductor process simulation and the device simulation by taking the description of the transistor layout input to stimulate the fabrication process and device behavior before the actual silicon is made. this paper illustrates the use of Synopsys' Taurus TCAD to develop and stimulate the fabrication and electrical behavior of NMOS and PMOS transistors in the complete CMOS process flow. Illustration also include how mask information extracted from a layout by Taurus Layout is used by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator to extract electrical characteristics. The specified process includes, not only steps required to stimulate a MOSFET device, but also all steps of the hypothetical CMOS process.