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  5. Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications
 
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Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

Journal
EPJ Web of Conferences
ISSN
2100-014X
Date Issued
2017
Author(s)
Yen Chin Teh
Universiti Malaysia Perlis
Ala’eddin A. Saif
Universiti Malaysia Perlis
Zul Azhar Zahid Jamal
Universiti Malaysia Perlis
Prabakaran A/L Poopalan
Universiti Malaysia Perlis
DOI
10.1051/epjconf/201716201042
Abstract
Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.
File(s)
Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications.pdf (520.63 KB)
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