Zaliman Sauli
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Preferred name
Zaliman Sauli
Official Name
Zaliman, Sauli
Alternative Name
Sauli, Zaliman B.
Sauli, Zaliman
Sauli, Z.
Main Affiliation
Scopus Author ID
24554644300
Researcher ID
FWC-2779-2022

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  • Publication
    Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
    ( 2009-07)
    Naser M. Ahmed
    ;
    Zaliman Sauli
    ;
    Uda Hashim
    ;
    Yarub Al-Douri
    The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV)
  • Publication
    Design and analysis of wideband ladder-type film bulk acoustic wave resonator filters in ku-band
    ( 2013-06-23)
    N. Izza M. Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    J. Singh
    ;
    Zaliman Sauli
    This paper presents the design of ladder-type filters based on film bulk acoustic wave resonator (FBAR) in Ku-band. The proposed FBAR filter has an insertion loss of −3 dB, out-of-band rejection of −12 dB and 3 dB bandwidth of 1.0 GHz from 15 GHz to 16 GHz. Based on the characteristics of the FBAR filter, the expected characteristics of FBAR resonators are determined by using the 1D numerical analysis. This design proves that it is possible to design a wide-bandwidth FBAR filter in Ku-band.
  • Publication
    Frequency dependent electrical properties of ferroelectric Ba0.8Sr0.2TiO3 thin film
    ( 1970)
    Ala’eddin A. SAIF
    ;
    Zul Azhar Zahid Jamal
    ;
    Zaliman Sauli
    ;
    Prabakaran A/L Poopalan
    The frequency dependent electrical parameters, such as impedance, electric modulus, dielectric constant and AC conductivity for ferroelectric Ba0.8Sr0.2TiO3 thin film have been investigated within the range of 1 Hz and 106 Hz at room temperature. Z* plane shows two regions corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes process. M" versus frequency plot reveals a relaxation peak, which is not observed in the ε″ plot and it has been found that this peak is a non-Debye-type. The frequency dependent conductivity plot shows three regions of conduction processes, i. e., a low-frequency region due to DC conduction, a mid-frequency region due to translational hopping motions and a high-frequency region due to localized hopping and/or reorientational motion.http://dx.doi.org/10.5755/j01.ms.17.2.490
  • Publication
    Failure analysis on silicon semiconductor device materials: Optical and high-resolution microscopic assessments
    ( 2022)
    Subash Chandra Bose Gopinath
    ;
    Santheraleka Ramanathan
    ;
    Mohd Najib Mohd Yasin
    ;
    Syahrizal Salleh
    ;
    Mohd Ibrahim Shapiai Razak
    ;
    Zool Hilmi Ismail
    ;
    Zaliman Sauli
    ;
    Sreeramanan Subramaniam
    ;
    M.B. Malarvili
    Defects of silicon (Si) semiconductor epilayers are crucial to be identified at laboratory environs. The identification of failure and its rectification at laboratory settings is essential for large-scaling manufacturing of narrowed down semiconductor devices. This research documented the inspection, identification and the solution for defects found in the Si semiconductor epilayers, fabricated by a simple and conventional photolithography technique, with the integration of metal oxide nanomaterial, zinc oxide (ZnO). The semiconductor epilayers, Si wafer, Si oxide and ZnO coated SiO2 layer were formed and examined. Optical microscope images [high power microscope (HPM) and 3D profilometer] reveal smooth surface of semiconductor epilayers development through thermal oxidation and photolithography techniques. High power ultraviolet-visible (UV-Vis) justified the accuracy of wet thermal oxidation by examining the thickness of oxide layer on Si wafer at 3837.3 A. The X-ray diffraction (XRD) analysis of sol-gel synthesized ZnO affirmed the hexagonal crystalline state and its nanoscale size at 54 nm. Field emission scanning electron microscopy (FESEM) has shown the insight of Si epilayer morphology with its elemental composition, which provides details of foreign substances on semiconductor surface. ZnO deposited Si epilayer was prepared through lamella preparation, prior to the cross-sectional field emission transmission electron microscopy (FETEM) analysis of the semiconductor, which revealed the uniformity of fabrication and ZnO distribution at Si epilayer. Failure analysis reported several defects on the Si epilayers in the state of patches and accumulation of impurities. The potential cause of the defects and the respective solutions are discussed as the accuracy and handling must be ensured throughout the fabrication process, to develop a flawless semiconductor for high performance. applications.
  • Publication
    Simulation and investigation of Si-based piezoelectric micromachined ultrasonic transducer (PMUT) performances
    ( 2023-07)
    Hasnizah Aris
    ;
    Muhammad Nizam Bin Rosli
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Zaliman Sauli
    ;
    Wan Mokhdzani Wan Nor Haimi
    Micro-electromechanical system (MEMS) based piezoelectric ultrasonic transducers for acoustic imaging of the surroundings are known as piezoelectric micromachined ultrasonic transducers (PMUTs). This research proposes a structural design of the PMUT with four fixed-guided beams. The beam is subjected to lateral loads, with vectors that are perpendicular to the longitudinal axis. This project simulated Piezoelectric Micromachined Ultrasonic Transducer (PMUT) with three different material properties i.e. Aluminium Nitride (AlN), Lead zirconate titanate (PZT) and Zinc Oxide (ZnO). Based on the study, it was found that reducing the beam dimensions and increasing the plate size will result in the first mode frequency reduction from 1.33x107 Hz to 3.74x106 Hz. Other than that, it was found that AlN PMUT experienced the maximum deflection of 6.3413 to 6.3478 μm when the loads applied in the range of 50 to 200 μN/m2. When the piezoelectric material changed to PZT, we obtained the maximum deflections of 0.3771 to 0.3786 μm when the same loads range applied to the PMUT. As for the ZnO PMUT, the maximum deflections obtained were in between 0.1702 μm to 0.1772 μm with the loads are maintained as in the loads applied to the AlN and PZT. This study proved the significant impact of altering the structural dimensions and material properties of PMUTs on their operational characteristics, specifically the first mode frequency and deflection behavior.