Nazuhusna Khalid
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Preferred name
Nazuhusna Khalid
Official Name
Nazuhusna, Khalid
Alternative Name
Nazuhusna, Khalid
Khalid, N.
Main Affiliation
Scopus Author ID
35208616600
Researcher ID
CZJ-6151-2022

Research Output
Now showing 1 - 5 of 5
  • Publication
    Remazol orange dye sensitized solar cell
    ( 2017-01-03)
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nor Azura Malini Ahmad Hambali
    ;
    Muda M.R.
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Nurul Izza Mohd Nor
    ;
    Norhawati Ahmad
    ;
    Nazuhusna Khalid
    ;
    Nur M. Selamat
    ;
    Nur Asyikin Mohd Anhar
    Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device performance was tested using solar cell simulator. The results show that the performance was increased at higher dye concentration and longer immersion time. The best device performance was obtained at 0.2% for dye concentration of 2.5 mM immersed at 24 hours.
  • Publication
    Comprehensive study on gate recess step for the fabrication of high-speed InGaAs/InAlAs/InP pHEMT
    ( 2017-01-03)
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of 'hump' structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed that the etch rate of bulk InGaAs is about 360 A/min and the percentage of dome height is consistent at approximately 25%. Meanwhile, the study on pHEMT epitaxial layer showed that the etching time of 3 minutes is sufficient in order to completely remove the cap layer. Gate leakage current of magnitude more than 10 times lower is observed on the devices that engaging Succinic Acid as the gate recess etching agent. The optimized processing steps will tailor for highly reproducible pHEMT fabrication process for high speed applications.
      37  9
  • Publication
    Film bulk acoustic wave resonator in 10-20 GHz frequency range
    ( 2017-01-03)
    Nurul Izza Mohd Nor
    ;
    Nazuhusna Khalid
    ;
    Muhammad Mahyiddin Ramli
    ;
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Siti Salwa Mat Isa
    ;
    Shahrir Rizal Kasjoo
    This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10-20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10-20 GHz frequency band. The proposed designs achieve a constant electromechanical coupling coefficient for 10-20 GHz. Analysis shows the Q varies highly dependent on the damping factor. The results show that the proposed design achieves almost double the Q factor at 15 GHz and 20 GHz operation when compared to similar designs.
      2  30
  • Publication
    Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications
    ( 2017-01-03)
    En A.Y.
    ;
    Norhawati Ahmad
    ;
    Muammar Mohamad Isa
    ;
    Siti Salwa Mat Siti
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together with different lattice constants, for instance InGaAs and InAlAs in order to form a heterojunction in between. However, InP is only utilised to be the substrate base of pHEMT. In the modelling process, extrinsic and intrinsic parameters need to be extracted. Briefly, a high accuracy transistor modelling enables designers to predict the real output of a circuit before it can be fabricated onto an actual chip.
      2  39
  • Publication
    Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications
    ( 2017-01-03)
    Xian O.J.
    ;
    Norhawati Ahmad
    ;
    Muammar Mohamad Isa
    ;
    Siti Salwa Mat Isa
    ;
    Muhammad Mahyiddin Ramli
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Missous M.
    HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could be perfectly used in the most of the high frequency application. In this project, small signal models of InGaAs/InAlAs/InP pHEMT with 7 extrinsic parameters and 8 intrinsic parameters are modelled.
      39  2