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Film bulk acoustic wave resonator in 10-20 GHz frequency range
Journal
2016 3rd International Conference on Electronic Design, ICED 2016
Date Issued
2017-01-03
Author(s)
Nurul Izza Mohd Nor
Universiti Malaysia Perlis
Nazuhusna Khalid
Universiti Malaysia Perlis
Muhammad Mahyiddin Ramli
Muammar Mohamad Isa
Universiti Malaysia Perlis
Norhawati Ahmad
Universiti Malaysia Perlis
Siti Salwa Mat Isa
Universiti Malaysia Perlis
Shahrir Rizal Kasjoo
Universiti Malaysia Perlis
DOI
10.1109/ICED.2016.7804692
Handle (URI)
Abstract
This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10-20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10-20 GHz frequency band. The proposed designs achieve a constant electromechanical coupling coefficient for 10-20 GHz. Analysis shows the Q varies highly dependent on the damping factor. The results show that the proposed design achieves almost double the Q factor at 15 GHz and 20 GHz operation when compared to similar designs.