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  5. Film bulk acoustic wave resonator in 10-20 GHz frequency range
 
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Film bulk acoustic wave resonator in 10-20 GHz frequency range

Journal
2016 3rd International Conference on Electronic Design, ICED 2016
Date Issued
2017-01-03
Author(s)
Nurul Izza Mohd Nor
Universiti Malaysia Perlis
Nazuhusna Khalid
Universiti Malaysia Perlis
Muhammad Mahyiddin Ramli
Faculty of Electronic Engineering & Technology
Muammar Mohamad Isa
Universiti Malaysia Perlis
Norhawati Ahmad
Universiti Malaysia Perlis
Siti Salwa Mat Isa
Universiti Malaysia Perlis
Shahrir Rizal Kasjoo
Universiti Malaysia Perlis
DOI
10.1109/ICED.2016.7804692
Abstract
This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10-20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10-20 GHz frequency band. The proposed designs achieve a constant electromechanical coupling coefficient for 10-20 GHz. Analysis shows the Q varies highly dependent on the damping factor. The results show that the proposed design achieves almost double the Q factor at 15 GHz and 20 GHz operation when compared to similar designs.
Subjects
  • AIN

  • FBAR

  • High Q

  • NEMS

  • RFMEMS

File(s)
Research repository notification.pdf (4.4 MB)
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