Home
  • English
  • ÄŒeÅ¡tina
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • LatvieÅ¡u
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Log In
    Have you forgotten your password?
Home
  • Browse Our Collections
  • Publications
  • Researchers
  • Research Data
  • Institutions
  • Statistics
    • English
    • ÄŒeÅ¡tina
    • Deutsch
    • Español
    • Français
    • Gàidhlig
    • LatvieÅ¡u
    • Magyar
    • Nederlands
    • Português
    • Português do Brasil
    • Suomi
    • Log In
      Have you forgotten your password?
  1. Home
 
Options

Film bulk acoustic wave resonator in 10-20 GHz frequency range

Journal
2016 3rd International Conference on Electronic Design, ICED 2016
Date Issued
2017-01-03
Author(s)
Nurul Izza Mohd Nor
Universiti Malaysia Perlis
Nazuhusna Khalid
Universiti Malaysia Perlis
Muhammad Mahyiddin Ramli
Faculty of Electronic Engineering & Technology
Muammar Mohamad Isa
Universiti Malaysia Perlis
Norhawati Ahmad
Universiti Malaysia Perlis
Siti Salwa Mat Isa
Universiti Malaysia Perlis
Shahrir Rizal Kasjoo
Universiti Malaysia Perlis
DOI
10.1109/ICED.2016.7804692
Handle (URI)
https://hdl.handle.net/20.500.14170/11411
Abstract
This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10-20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10-20 GHz frequency band. The proposed designs achieve a constant electromechanical coupling coefficient for 10-20 GHz. Analysis shows the Q varies highly dependent on the damping factor. The results show that the proposed design achieves almost double the Q factor at 15 GHz and 20 GHz operation when compared to similar designs.
Subjects
  • AIN

  • FBAR

  • High Q

  • NEMS

  • RFMEMS

Thumbnail Image
  • About Us
  • Contact Us
  • Policies