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Mohd Najib Mohd Yasin
Preferred name
Mohd Najib Mohd Yasin
Official Name
Mohd Najib , Mohd Yasin
Alternative Name
M. Yasin, M. Najib
Yasin, Mohd Najib
Yasin, Mohd Najib M.
Yasin, M. N.Mohd
Mohd Yasin, M. N.
Main Affiliation
Scopus Author ID
57210314287
Researcher ID
AAQ-6242-2021
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1 - 6 of 6
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PublicationSmart embedded-analytics sensors with cloud-based measurement system for HVAC( 2020-01-08)
;Aseri N.S.M.Shapiai M.I.HVAC system is a necessary component of environment to maintain the temperature and humidity to be kept at certain levels by using air taken from outside to ensure the indoor comfort. The purpose of the study is to reduce the electricity energy usage and cost from air conditioning by using smart embedded-analytics sensors to provide the automatic thermal control in an area. In this study, we used sensors such as temperature and humidity sensors to detect and read the currently temperature and humidity of an area monitored by a microcontroller. The cloud-based system and the sensors are connected via wifi in the presence of MQTT protocol. The protocol enables publish and subscribe method which provide the communication between sensors, cloud-based system and HVAC system. This communication can serve thermal control automatically thus resulting the optimize usage of energy from air conditioning according to the external environment temperature and humidity. The control of the temperature and humidity from air conditioning can be designed through the programming embedded in the microcontroller. The monitoring result can be displayed from the control panel to ensure how the system works. -
PublicationThe design of wideband circularly polarized hemispherical DRA using conformal open halfloop excitation( 2017-12-15)
;Mohamad Ismail Sulaiman ;Hafiz Basarudin ;Aizat Faiz RamliMohd Azlan AbuA circularly polarized (CP) hollow hemispherical dielectric resonator antenna (DRA) is presented. The CP DRA that is excited using conformal open half loop metal strips has been studied theoretically and experimentally. The proposed antenna configuration has provided a measured CP and return loss bandwidths of ∼11.i5%, and 10.32% respectively. The DRA has been simulated using Method of Moments (MoM) model, where a good agreement has been obtained between the experimental and theoretical results. -
PublicationGreen Nanocomposite-Based metamaterial electromagnetic absorbers: Potential, current developments and future perspectives( 2020)
;Nurul Fatihah Nabila Yah ;Mohdfareq Abdulmalek ;Soh Ping Jack ;R. Badlishah, Ahmad ;Lee Yeng Seng ;Mohd Haizal Jamaluddin -
PublicationWaveguide for vortex mode generation in HVAC cloud management communication( 2020-01-08)
;Amphawan A. ;Hafizalshah M.H.Shapiai M.I.Optical modes allow for the transmission of data by propagating light in a singular coherent form along the channel. By constructing a special waveguide structure, a unique mode may be formed in a plane perpendicular to the transmission axis. This paper elucidates on the design of a waveguide to generate unique vortex modes and analyses the properties of the generated modes. -
PublicationElectrically tunable Left-Handed textile metamaterial for microwave applications( 2021)
;Kabir Hossain ;Ping Jack Soh ;Mohd Haizal Jamaluddin ;Samir Salem Al-Bawri ;R. Badlishah, AhmadNitin SalujaAn electrically tunable, textile-based metamaterial (MTM) is presented in this work. The proposed MTM unit cell consists of a decagonal-shaped split-ring resonator and a slotted ground plane integrated with RF varactor diodes. The characteristics of the proposed MTM were first studied independently using a single unit cell, prior to different array combinations consisting of 1 × 2, 2 × 1, and 2 × 2 unit cells. Experimental validation was conducted for the fabricated 2 × 2 unit cell array format. The proposed tunable MTM array exhibits tunable left-handed characteristics for both simulation and measurement from 2.71 to 5.51 GHz and provides a tunable transmission coefficient of the MTM. Besides the left-handed properties within the frequency of interest (from 1 to 15 GHz), the proposed MTM also exhibits negative permittivity and permeability from 8.54 to 10.82 GHz and from 10.6 to 13.78 GHz, respectively. The proposed tunable MTM could operate in a dynamic mode using a feedback system for different microwave wearable applications. -
PublicationFailure analysis on silicon semiconductor device materials: optical and high-resolution microscopic assessments( 2022)
;Santheraleka Ramanathan ;Mohd Ibrahim Shapiai Razak ;Zool Hilmi Ismail ;Syahrizal Salleh ;Sreeramanan SubramaniamM.B. MalarviliDefects of silicon (Si) semiconductor epilayers are crucial to be identified at laboratory environs. The identification of failure and its rectification at laboratory settings is essential for large-scaling manufacturing of narrowed down semiconductor devices. This research documented the inspection, identification and the solution for defects found in the Si semiconductor epilayers, fabricated by a simple and conventional photolithography technique, with the integration of metal oxide nanomaterial, zinc oxide (ZnO). The semiconductor epilayers, Si wafer, Si oxide and ZnO coated SiO2 layer were formed and examined. Optical microscope images [high power microscope (HPM) and 3D profilometer] reveal smooth surface of semiconductor epilayers development through thermal oxidation and photolithography techniques. High power ultraviolet-visible (UV-Vis) justified the accuracy of wet thermal oxidation by examining the thickness of oxide layer on Si wafer at 3837.3 Ã…. The X-ray diffraction (XRD) analysis of sol-gel synthesized ZnO affirmed the hexagonal crystalline state and its nanoscale size at 54 nm. Field emission scanning electron microscopy (FESEM) has shown the insight of Si epilayer morphology with its elemental composition, which provides details of foreign substances on semiconductor surface. ZnO deposited Si epilayer was prepared through lamella preparation, prior to the cross-sectional field emission transmission electron microscopy (FETEM) analysis of the semiconductor, which revealed the uniformity of fabrication and ZnO distribution at Si epilayer. Failure analysis reported several defects on the Si epilayers in the state of patches and accumulation of impurities. The potential cause of the defects and the respective solutions are discussed as the accuracy and handling must be ensured throughout the fabrication process, to develop a flawless semiconductor for high performance applications.7 10