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  5. Failure analysis on silicon semiconductor device materials: optical and high-resolution microscopic assessments
 
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Failure analysis on silicon semiconductor device materials: optical and high-resolution microscopic assessments

Journal
Journal of Materials Research and Technology
ISSN
2238-7854
Date Issued
2022
Author(s)
Subash Chandra Bose Gopinath
Universiti Malaysia Perlis
Santheraleka Ramanathan
Universiti Malaysia Perlis
Mohd Najib Mohd Yasin
Universiti Malaysia Perlis
Mohd Ibrahim Shapiai Razak
Universiti Teknologi Malaysia
Zool Hilmi Ismail
Universiti Teknologi Malaysia
Syahrizal Salleh
Cuatro Services Sdn. Bhd.
Zaliman Sauli
Universiti Malaysia Perlis
Sreeramanan Subramaniam
Universiti Malaysia Perlis
M.B. Malarvili
Universiti Teknologi Malaysia
DOI
10.1016/j.jmrt.2022.10.116
Handle (URI)
https://www.sciencedirect.com/science/article/pii/S2238785422016544/pdfft?md5=1bed5c8f1debdf7862248cd1ea24c39c&pid=1-s2.0-S2238785422016544-main.pdf
https://www.sciencedirect.com/journal/journal-of-materials-research-and-technology
https://hdl.handle.net/20.500.14170/3206
Abstract
Defects of silicon (Si) semiconductor epilayers are crucial to be identified at laboratory environs. The identification of failure and its rectification at laboratory settings is essential for large-scaling manufacturing of narrowed down semiconductor devices. This research documented the inspection, identification and the solution for defects found in the Si semiconductor epilayers, fabricated by a simple and conventional photolithography technique, with the integration of metal oxide nanomaterial, zinc oxide (ZnO). The semiconductor epilayers, Si wafer, Si oxide and ZnO coated SiO2 layer were formed and examined. Optical microscope images [high power microscope (HPM) and 3D profilometer] reveal smooth surface of semiconductor epilayers development through thermal oxidation and photolithography techniques. High power ultraviolet-visible (UV-Vis) justified the accuracy of wet thermal oxidation by examining the thickness of oxide layer on Si wafer at 3837.3 Å. The X-ray diffraction (XRD) analysis of sol-gel synthesized ZnO affirmed the hexagonal crystalline state and its nanoscale size at 54 nm. Field emission scanning electron microscopy (FESEM) has shown the insight of Si epilayer morphology with its elemental composition, which provides details of foreign substances on semiconductor surface. ZnO deposited Si epilayer was prepared through lamella preparation, prior to the cross-sectional field emission transmission electron microscopy (FETEM) analysis of the semiconductor, which revealed the uniformity of fabrication and ZnO distribution at Si epilayer. Failure analysis reported several defects on the Si epilayers in the state of patches and accumulation of impurities. The potential cause of the defects and the respective solutions are discussed as the accuracy and handling must be ensured throughout the fabrication process, to develop a flawless semiconductor for high performance applications.
Subjects
  • Silicon semiconductor...

  • Morphology inspection...

  • Photolithography

  • Failure analysis

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Failure analysis on silicon semiconductor device.pdf (3.43 MB)
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