Shazlina Johari
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Preferred name
Shazlina Johari
Official Name
Shazlina, Johari
Alternative Name
Johari, S.
S., Johari
Main Affiliation
Scopus Author ID
53163664100
Researcher ID
GAA-3219-2022

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  • Publication
    Production of low temperature synthetic graphite
    ( 2023-04)
    Anis Syafiqa Rosman
    ;
    Ranjitha Navalan
    ;
    Muhammad Mahyiddin Ramli
    ;
    Norizah Abd Karim
    ;
    Mohd Fairus Ahmad
    ;
    Shazlina Johari
    ;
    Norshamsuri Ali @ Hasim
    ;
    Nurul Huda Osman
    Synthetic graphite is a material consisting of graphitic carbon which has been obtained by graphitizing a non-graphitic carbon. The growth in demand, particularly in customizing properties for certain usage has brought about research on viable alternative, low-cost, and environmentally pleasant synthetic graphite production. Biomass wastes are amongst appealing carbon precursors which have been broadly checked out as replacement carbon for graphite production. This research aimed to synthesize synthetic graphite from oil palm trunks at low temperatures (500 °C, 400 °C and 300 °C) under controlled conditions to determine the physical properties and properties of the graphite obtained. After the heat treatment process, the obtained samples were then characterized by using XRD, SEM and RAMAN characterizations. Based on SEM and RAMAN characterization, it can be seen that graphite that undergoes a 500 °C pyrolysis process shows the best results compare to graphite that undergoes a pyrolysis process at the temperatures of 300 °C and 400 °C. The graphite flakes and the peaks obtained for 500 °C graphite are obviously present. For XRD characterization, the best samples at 500 °C were chosen to be characterized. From the results, the sample shows slight behavior imitating the commercialized graphite. Hence, from the characterizations of the samples, it can be concluded that the best synthetic graphite produced was from the oil palm trunks heated at 500 ° C
  • Publication
    Visible Light-Assisted Charge Extraction in High-Band-Gap SrTiO3 through the Integration of a Triplet Sensitizer-Emitter Thin Film
    ( 2024-01-22)
    Jie K.V.Y.
    ;
    Mohd Fairus Ahmad
    ;
    Mohmad A.R.
    ;
    Ismail A.M.
    ;
    Mohd Natashah Norizan
    ;
    Ramli M.M.
    ;
    Safizan Shaari
    ;
    Sulaiman Y.
    ;
    Shamsul Amir Abdul Rais
    ;
    Shazlina Johari
    A challenge in PV designs, including those with an electron transport layer (ETL), is the presence of ‘parasitic absorbers’. These are layers that absorb light without significantly converting it to electrical current, impacting the total external quantum efficiency (EQE). Strontium titanate (STO), a high-band-gap (3.20 eV) perovskite metal oxide, holds promise as an electron transport layer (ETL) for solar energy harvesting. Despite STO’s potential, it primarily operates in the UV spectrum, not fully utilizing the broader light range, and hence can be the source of parasitic absorbers. In this study, we report a significant enhancement in the EQE of STO through the integration of a triplet sensitizer-emitter (TSE) system, designed to upconvert the visible spectrum into UV light and improve the charge extraction from STO. The TSE system uses carbazolyl dicyanobenzene (4CzIPN) as a sensitizer and p-terphenyl (TP) as an emitter. To investigate the EQE of such a system, we fabricate STO as a PV cell. The revised PV cell architecture (ITO/TiO2/STO/TSE/PEDOT:PSS/Al) is a modification of the conventional configurations (ITO/TiO2/STO/PEDOT:PSS/Al). With the TSE thin film, the modified STO PV cell shows better charge extraction under sunlight compared to the standard STO PV cell, indicating that the upconversion process can enhance the hole conductions from STO to PEDOT:PSS through the TSE system. We noted an EQE increase with intense light of λ > 345 nm in thicker TSE layers and a decrease in the EQE under similar light intensity in thinner TSE layers. The Kelvin probe force measurement (KPFM) data showed that the TSE layer receives holes from STO under illumination. Additionally, time-resolved photoluminescence (TRPL) experiments showed that the TSE/STO thin film is able to produce UV emission after irradiation with lower energy light. Then, the EQE variation in thicker TSE layers under intense irradiation can be attributed to the solid-state upconversion, indicating its thickness-dependent performance. These findings underline the strategies for maximizing the utilization of the solar spectrum in PV applications.