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Effect of Ni on the suppression of sn whisker formation in Sn-0.7Cu solder joint

2021 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Andrei Victor Sandu , Muhammad Mahyiddin Ramli , Khor Chu Yee , Noor Zaimah Mohd Mokhtar , Jitrin Chaiprapa

The evolution of internal compressive stress from the intermetallic compound (IMC) Cu6Sn5 growth is commonly acknowledged as the key inducement initiating the nucleation and growth of tin (Sn) whisker. This study investigates the effect of Sn-0.7Cu-0.05Ni on the nucleation and growth of Sn whisker under continuous mechanical stress induced. The Sn-0.7Cu-0.05Ni solder joint has a noticeable effect of suppression by diminishing the susceptibility of nucleation and growth of Sn whisker. By using a synchrotron micro X-ray fluorescence (µ-XRF) spectroscopy, it was found that a small amount of Ni alters the microstructure of Cu6Sn5 to form a (Cu,Ni)6Sn5 intermetallic layer. The morphology structure of the (Cu,Ni)6Sn5 interfacial intermetallic layer and Sn whisker growth were investigated by scanning electron microscope (SEM) in secondary and backscattered electron imaging mode, which showed that there is a strong correlation between the formation of Sn whisker and the composition of solder alloy. The thickness of the (Cu,Ni)6Sn5 IMC interfacial layer was relatively thinner and more refined, with a continuous fine scallop-shaped IMC interfacial layer, and consequently enhanced a greater incubation period for the nucleation and growth of the Sn whisker. These verification outcomes proposes a scientifically foundation to mitigate Sn whisker growth in lead-free solder joint.

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Effect of isothermal annealing on Sn whisker growth behavior of Sn0.7Cu0.05Ni solder joint

2023 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Muhammad Mahyiddin Ramli , Mohd. Mustafa Al Bakri Abdullah , Andrei Victor Sandu , Petrica Vizureanu , Ioan Gabriel Sandu

This paper presents an assessment of the effect of isothermal annealing of Sn whisker growth behavior on the surface of Sn0.7Cu0.05Ni solder joints using the hot-dip soldering technique. Sn0.7Cu and Sn0.7Cu0.05Ni solder joints with a similar solder coating thickness was aged up to 600 h in room temperature and annealed under 50 °C and 105 °C conditions. Through the observations, the significant outcome was the suppressing effect of Sn0.7Cu0.05Ni on Sn whisker growth in terms of density and length reduction. The fast atomic diffusion of isothermal annealing consequently reduced the stress gradient of Sn whisker growth on the Sn0.7Cu0.05Ni solder joint. It was also established that the smaller (Cu,Ni)6Sn5 grain size and stability characteristic of hexagonal η-Cu6Sn5 considerably contribute to the residual stress diminished in the (Cu,Ni)6Sn5 IMC interfacial layer and are able to suppress the growth of Sn whiskers on the Sn0.7Cu0.05Ni solder joint. The findings of this study provide environmental acceptance with the aim of suppressing Sn whisker growth and upsurging the reliability of the Sn0.7Cu0.05Ni solder joint at the electronic-device-operation temperature.

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Effect of isothermal annealing on Sn whisker growth behavior of Sn0.7Cu0.05Ni solder joint

2023 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Muhammad Mahyiddin Ramli , Mohd. Mustafa Al Bakri Abdullah , Andrei Victor Sandu , Petrica Vizureanu , Ioan Gabriel Sandu

This paper presents an assessment of the effect of isothermal annealing of Sn whisker growth behavior on the surface of Sn0.7Cu0.05Ni solder joints using the hot-dip soldering technique. Sn0.7Cu and Sn0.7Cu0.05Ni solder joints with a similar solder coating thickness was aged up to 600 h in room temperature and annealed under 50 °C and 105 °C conditions. Through the observations, the significant outcome was the suppressing effect of Sn0.7Cu0.05Ni on Sn whisker growth in terms of density and length reduction. The fast atomic diffusion of isothermal annealing consequently reduced the stress gradient of Sn whisker growth on the Sn0.7Cu0.05Ni solder joint. It was also established that the smaller (Cu,Ni)6Sn5 grain size and stability characteristic of hexagonal η-Cu6Sn5 considerably contribute to the residual stress diminished in the (Cu,Ni)6Sn5 IMC interfacial layer and are able to suppress the growth of Sn whiskers on the Sn0.7Cu0.05Ni solder joint. The findings of this study provide environmental acceptance with the aim of suppressing Sn whisker growth and upsurging the reliability of the Sn0.7Cu0.05Ni solder joint at the electronic-device-operation temperature.

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The Effect of GO/TiO2 Thin Film During Photodegradation of Methylene Blue Dye

2021 , Azliza Azani , Dewi Suriyani Che Halin , Mohd. Mustafa Al Bakri Abdullah , Kamrosni Abdul Razak , Mohd Fairul Sharin Abdul Razak , V Chobpattana , Mohd Arif Anuar Mohd Salleh , Muhammad Mahyiddin Ramli

Titanium (IV) isopropoxide (TTIP) was used to synthesize GO/TiO2 thin films using a sol-gel spin-coating method onto a glass substrate, undergoing an heat tretment at 350 °C. Several amounts of graphene oxide (GO) (0-20mg) were weighed into a sol solution of TiO2 to produce GO/TiO2 thin films. The thin film samples were characterized by X-ray diffraction (XRD) to analyze the samples’ phase and by scanning electron microscopy (SEM) to analyze the samples’ microstructure. Physical testing such as water contact angle (WCA) was analyzed using an optical microscope with J-Image software. In contrast, the optical band gap and photodegradation of methylene blue under sunlight irradiation of the thin film was analyzed using UV-VIS spectrophotometry. GO5 thin film sample showed low-intensity anatase phase formation, where the microstructure revealed a larger surface area with the addition of GO. WCA reveals that GO/TiO2 thin film exhibits super hydrophilic properties where the angle decreases from 37.83° to 4.11°. The optical result shows that GO has improved the absorption edges by expanding into visible regions. Moreover, due to the existence of GO 3.30 eV band gap energy of TiO2 decreases from to 3.18 eV obtained by GO5. The improved adsorption edge allows Ti3+, O2 and interstitial states to be formed in low valence states with energy underneath than in the TiO2 band gap. Therefore, the photodegradation of methylene blue (MB) dye increases from 48 % to 59 % in the GO/TiO2 thin film.

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Effect of Ni on the suppression of Sn whisker formation in Sn-0.7Cu solder joint

2021 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Andrei Victor Sandu , Muhammad Mahyiddin Ramli , Khor Chu Yee , Noor Zaimah Mohd Mokhtar , Jitrin Chaiprapa

The evolution of internal compressive stress from the intermetallic compound (IMC) Cu6Sn5 growth is commonly acknowledged as the key inducement initiating the nucleation and growth of tin (Sn) whisker. This study investigates the effect of Sn-0.7Cu-0.05Ni on the nucleation and growth of Sn whisker under continuous mechanical stress induced. The Sn-0.7Cu-0.05Ni solder joint has a noticeable effect of suppression by diminishing the susceptibility of nucleation and growth of Sn whisker. By using a synchrotron micro X-ray fluorescence (µ-XRF) spectroscopy, it was found that a small amount of Ni alters the microstructure of Cu6Sn5 to form a (Cu,Ni)6Sn5 intermetallic layer. The morphology structure of the (Cu,Ni)6Sn5 interfacial intermetallic layer and Sn whisker growth were investigated by scanning electron microscope (SEM) in secondary and backscattered electron imaging mode, which showed that there is a strong correlation between the formation of Sn whisker and the composition of solder alloy. The thickness of the (Cu,Ni)6Sn5 IMC interfacial layer was relatively thinner and more refined, with a continuous fine scallop-shaped IMC interfacial layer, and consequently enhanced a greater incubation period for the nucleation and growth of the Sn whisker. These verification outcomes proposes a scientifically foundation to mitigate Sn whisker growth in lead-free solder joint.

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Fabrication of Strontium Titanate thin film with pre-crystallized layer via sol-gel spin coating method

2022-12 , Kelvin Voon Yan Jie , Mohd Fairus Ahmad , Muhammad Mahyiddin Ramli , Safizan Shaari , Arif Mawardi Ismail , Yusran Sulaiman

The technique of pre-crystallized layer is introduced in the strontium titanate (STO) thin film fabrication to improve the coating thickness and the crystallinity. The STO thin films were fabricated on glass substrates via the spin coating method with STO precursor solution that was synthesized through the sol-gel process. The characteristics of the thin films were analyzed through X-ray diffraction (XRD) analysis, profilometry, UV-Vis spectra analysis and scanning electron microscopy (SEM) analysis. In the present study, the samples of 20 layers and 25 layers (deposited on the pre-crystallized layer) exhibited better crystallinity as compared with the samples of 5 layers, 10 layers and 15 layers (without the pre-crystallized layer). The samples of 25 layers exhibited the highest film thickness (224 nm), highest absorbance intensity and the highest XRD peak intensity at 32, 40, 47 and 58°, which represent the planes (110), (111), (200) and (210), respectively. The pre-crystallized layer served as the mechanical support for further layer deposition.

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Production of low temperature synthetic graphite

2023-04 , Anis Syafiqa Rosman , Ranjitha Navalan , Muhammad Mahyiddin Ramli , Norizah Abd Karim , Mohd Fairus Ahmad , Shazlina Johari , Norshamsuri Ali @ Hasim , Nurul Huda Osman

Synthetic graphite is a material consisting of graphitic carbon which has been obtained by graphitizing a non-graphitic carbon. The growth in demand, particularly in customizing properties for certain usage has brought about research on viable alternative, low-cost, and environmentally pleasant synthetic graphite production. Biomass wastes are amongst appealing carbon precursors which have been broadly checked out as replacement carbon for graphite production. This research aimed to synthesize synthetic graphite from oil palm trunks at low temperatures (500 °C, 400 °C and 300 °C) under controlled conditions to determine the physical properties and properties of the graphite obtained. After the heat treatment process, the obtained samples were then characterized by using XRD, SEM and RAMAN characterizations. Based on SEM and RAMAN characterization, it can be seen that graphite that undergoes a 500 °C pyrolysis process shows the best results compare to graphite that undergoes a pyrolysis process at the temperatures of 300 °C and 400 °C. The graphite flakes and the peaks obtained for 500 °C graphite are obviously present. For XRD characterization, the best samples at 500 °C were chosen to be characterized. From the results, the sample shows slight behavior imitating the commercialized graphite. Hence, from the characterizations of the samples, it can be concluded that the best synthetic graphite produced was from the oil palm trunks heated at 500 ° C

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A review of visible-to-UV photon upconversion systems based on triplet–triplet annihilation photon upconversion

2022-12 , Kelvin Voon Yan Jie , Mohd Fairus Ahmad , Muhammad Mahyiddin Ramli , Safizan Shaari , Arif Mawardi Ismail , Yusran Sulaiman

Due to the tunable spectrum range and potential application under non-coherent solar irradiation, triplet-triplet annihilation based molecular photon upconversion (TTA-UC) systems represent a compelling study field for a variety of photonic implementations. There were studies on the incorporation of TTA-UC technology with photovoltaic technology, which made it possible to further improve the energy harvest performance through the utilisation of the wasted spectrum. However, many TTA-UC studies are limited to energy upconversion within the visible spectrum range. For photovoltaic cells with a higher band gap, which harvest the higher energy spectrum (UV region), an efficient Vis-to-UV upconversion is preferred. The Vis-to-UV TTA-UC system was first introduced in 2006. Recently, more studies were conducted to discover the Vis-to-UV upconversion system with high quantum efficiency and low excitation intensity such as the nanocrystal sensitizerbased system and the thermally activated delayed fluorescence sensitizer-based system. Recent studies in the solvent system of Vis-to-UV upconversion system had demonstrated the dependence of the couple photostability on the solvent and extended the solvent selection to inorganic solvent. In this review, we are reviewing the research background of the Vis-to-UV TTA-UC system and discussing the current challenges and potential developments in this research area.

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The effect of polyethylene glycol addition on wettability and optical properties of GO/TiO2 thin film

2021 , Azliza Azani , Dewi Suriyani Che Halin , Kamrosni Abdul Razak , Mohd. Mustafa Al Bakri Abdullah , Marcin Nabiałek , Muhammad Mahyiddin Ramli , Mohd Fairul Sharin Abdul Razak , Andrei Victor Sandu , Wojciech Sochacki , Tomasz Skrzypczak

Modification has been made to TiO2 thin film to improve the wettability and the absorption of light. The sol-gel spin coating method was successfully used to synthesize GO/TiO2 thin films using a titanium (IV) isopropoxide (TTIP) as a precursor. Different amounts of polyethylene glycol (PEG) (20 to 100 mg) were added into the parent sol solution to improve the optical properties and wettability of the GO/TiO2 thin film. The effect of different amounts of PEG was characterized using X-ray diffraction (XRD) for the phase composition, scanning electron microscopy (SEM) for microstructure observation, atomic force microscopy (AFM) for the surface topography, ultraviolet–visible spectrophotometry (UV-VIS) for the optical properties and wettability of the thin films by measuring the water contact angle. The XRD analysis showed the amorphous phase. The SEM and AFM images revealed that the particles were less agglomerated and surface roughness increases from 1.21 × 102 to 2.63 × 102 nm when the amount of PEG increased. The wettability analysis results show that the water contact angle of the thin film decreased to 27.52° with the increase of PEG to 80 mg which indicated that the thin film has hydrophilic properties. The optical properties also improved significantly, where the light absorbance wavelength became wider and the band gap was reduced from 3.31 to 2.82 eV with the presence of PEG.