Mohammad Nuzaihan Md Nor
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Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022

Research Output

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  • Publication
    Top-Down Fabrication of Silicon Nanogap for Detection of Dengue Virus (DENV)
    ( 2020-01-01)
    Zulkiffli M.N.F.
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Zailan Z.
    ;
    Isa N.A.M.
    ;
    Ibau C.
    ;
    Zainol Abidin W.’.B.
    ;
    Azlan A.S.
    ;
    Mohd Khairuddin Md Arshad
    In this work, a highly sensitive Silicon nanogap biosensor was demonstrated for Deoxyribonucleic acid (DNA) detection related to Dengue virus (DENV). The Silicon nanogap was fabricated using the top–down conventional lithography approach followed by reactive ion etching (RIE) to further thin down the nanogap. The inspections of Silicon nanogap structures were carried out using the scanning electron microscope (SEM) and atomic force microscopy (AFM). The surface of the fabricated Silicon nanogap was functionalized by means of a three-steps procedure involving surface modification, immobilization and hybridization. This procedure acts as a liquid gate control to establish the electrical detection targets of the dengue virus. The electrical detection is based on the changes in the current of the sensor due to the accumulation of the negative charges by the immobilized probe and hybridized target Deoxyribonucleic acid. The limit of detection (LOD) achieved was recorded at 10 pM with a 207 nm of fabricated Silicon nanogap and its sensitivity at 1.5 × 10−10 AM−1. The demonstrated results show that the Silicon nanogap has the excellent properties for detection of dengue virus as biosensor devices.
  • Publication
    Fabrication and Characterizations of Poly-Si Nanowire Biosensor using Conventional Photolithography Technique for Detection of Dengue Virus DNA Type 2 (DENV-2)
    ( 2020-07-09)
    Shazereen Azlan A.
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohd Khairuddin Md Arshad
    ;
    Amirah Basyarah W.
    ;
    Ibau C.
    ;
    Mohamad Faris Mohamad Fathil
    Nowadays, nanotechnology has become a vast expanding application which can be used all across the science field such as chemistry, biology, physic, material science and engineering. In this paper, a poly-Si nanowire biosensor was fabricated by using the conventional photolithography technique. In addition, this technique is used to define the initial poly-Si with the dimension of 1 μm. After the conventional photolithography process, the photoresist undergone the development using resist developer and etched with reactive ion etching (RIE). Meanwhile, for the electrical part, it was observable that there was an increase in current when the nanowire has been hybridized with Dengue DNA type-2 (DENV-2) ranging from 10 fM - 10 μM. The morphology of the poly-Si nanowire was characterized by optical microscopy whilst electrically characterized by measuring the two-terminal current-voltage (I-V) characteristic.
  • Publication
    Faradaic electrochemical impedimetric analysis on MoS2 /Au-NPs decorated surface for C-reactive protein detection
    ( 2022-09-01)
    Dalila R N.
    ;
    Mohd Khairuddin Md Arshad
    ;
    Subash Chandra Bose Gopinath
    ;
    Ibau C.
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Azmi U.Z.M.
    ;
    Anbu P.
    Background: A label-free Faradaic electrochemical impedimetric was developed for a highly sensitive detection of C-reactive protein using a gold interdigitated microelectrode bio-sensing platform enhanced by a gold nanoparticle-decorated molybdenum disulfide (Au-NPs/MoS2) nanosheet via selected chemical linking processes. C-reactive protein (C-RP), a crystalline protein, generates by the liver and hikes when there is inflammation throughout the patients’ body. The concentrations of C-RP plasma levels tend to increase rapidly when the patient facing major injury which will lead to cardiovascular disease (CVD). Methods: The 5 µm microelectrode and gap size g-IDE with the nanostructured materials was demonstrated to increase the impedimetric detection response in Faradaic-mode electrochemical impedance spectroscopy high performance detection environment. The high surface area-to-volume ratio of the modified Au-NPs/MoS2 nanocomposite increased the probes loading onto the transducer and enhanced the impedimetric detection response of the C-RP target post-binding due to an amplified net change in the charge transfer resistance. The developed immunoassay revealed a linear detection of C-RP biomarker in a logarithmic-scale from as low as 1 fg/mL up to 1 µg/mL, and a limit of detection of 0.01 fg/mL. The sensor shows great potential as an early warning risk for cardiovascular disease at a threshold concentration value of C-RP at 1 µg/mL. Significant findings: The biosensor demonstrates an excellent discrimination against other competing proteins in serum, exhibiting the highest predilection to C-RP spiked human serum target. The sensor's reproducibility is reported within an acceptable range of relative standard deviation of 1–4% for n = 3.
  • Publication
    Field-Effect Transistor-based Biosensor Optimization: Single Versus Array Silicon Nanowires Configuration
    ( 2020-01-01)
    Ong C.C.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohd Khairuddin Md Arshad
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Ruslinda A. Rahim
    ;
    Uda Hashim
    ;
    Rafizatul Fitri Abdullah
    ;
    Mohd Hazmi Mohd Ghazali
    ;
    Tamjis N.
    This paper demonstrated the effect of different number of silicon nanowire transducer channels, in other word single, double, and triple channels towards the performance of field-effect transistor-based biosensor through simulation tool. These silicon nanowire field-effect transistor biosensors were designed and simulated in device simulation modelling tool, Silvaco ATLAS with fixed length, width, and height of the silicon nanowire. Different negatively interface charge density values were applied on the transducer channels’ surface of the biosensors to represent as detected target biomolecules that will bind onto the surface of the transducer regions. Based on the results, more negatively interface charges density values presented on the sensing channels had reduced the electron carrier accumulation at the channel’s interface, therefore, reduced drain current flow between the source and drain terminal. With the increase number of the transducer channels, significant change in drain current for every applied negatively interface charges became more apparent and increased the sensitivity of the biosensor. The triple transducer channels silicon nanowire field-effect transistor biosensor had demonstrated highest sensitivity, that is 2.83 µA/e∙cm2, which indicates it has better response for the detection of interface charges, thus increases chances for transducer channels reaction to the target biomolecules during testing or diagnosis.
  • Publication
    Molybdenum disulfide—gold nanoparticle nanocomposite in field-effect transistor back-gate for enhanced C-reactive protein detection
    ( 2020-11-01)
    Dalila N.R.
    ;
    Mohd Khairuddin Md Arshad
    ;
    Subash Chandra Bose Gopinath
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohamad Faris Mohamad Fathil
    Nanofabricated gold nanoparticles (Au-NPs) on MoS2 nanosheets (Au-NPs/MoS2) in back-gated field-effect transistor (BG-FET) are presented, which acts as an efficient semiconductor device for detecting a low concentration of C-reactive protein (C-RP). The decorated nanomaterials lead to an enhanced electron conduction layer on a 100-μm-sized transducing channel. The sensing surface was characterized by Raman spectroscopy, ultraviolet–visible spectroscopy (UV-Vis), atomic force microscopy (AFM), scanning electron microscopy (SEM), and high-power microscopy (HPM). The BG-FET device exhibits an excellent limit of detection of 8.38 fg/mL and a sensitivity of 176 nA/g·mL−1. The current study with Au-NPs/MoS2 BG-FET displays a new potential biosensing technology; especially for integration into complementary metal oxide (CMOS) technology for hand-held future device application. [Figure not available: see fulltext.]
  • Publication
    Silicon nanowire biosensors for diabetes mellitus monitoring
    ( 2024-10)
    M. Shaifullah A. S
    ;
    J. Jumat
    ;
    Mohammad Nuzaihan Md Nor
    ;
    J. N. Ismail
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Nur Hamidah Abdul Halim
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    M. Syamsul
    ;
    Rozaimah A. T
    The main goal of this research is the development of a label-free biosensor for the detection of diabetes mellitus (DM) using the target molecule retinol-binding protein 4 (RBP4). The enzyme-linked immunosorbent assay (ELISA) approach, currently used to detect DM, is time-consuming and difficult. As a result, label-free biosensors are being considered as an alternative. In this research, silicon nanowires (SiNWs) were selected as the transducer for this biosensor due to their low cost, real-time analysis capability, high sensitivity, and low detection limit. The SiNWs were created using conventional lithography, reactive ion etching (RIE), and physical vapor deposition (PVD), and then dripped with a gold nanoparticle solution to create gold-decorated SiNWs. The surface of the gold-decorated SiNWs was functionalized using 3-aminothiophenol and glutaraldehyde solutions before being immobilized with DM RBP4 antibodies and targets. The electrical characterization of the gold nanoparticle decorated SiNWs biosensor revealed good performance in DM detection. The pH tests confirmed that the SiNWs acted as a transducer, with current proportional to the DM RBP4 concentration. The estimated limit of detection (LOD) and sensitivity for detecting DM RBP4 binding were 0.076 fg/mL and 8.92 nA(g/mL)-1, respectively. This gold nanoparticle decorated SiNWs biosensor performed better than other methods and enabled efficient, accurate, and direct detection of DM. The SiNWs could be used as a distinctive electrical protein biosensor for biological diagnostic purposes. In conclusion, gold nanoparticle deposition offers effective label-free, direct, and high-accuracy DM detection, outperforming previous approaches. Thus, these SiNWs serve as novel electrical protein biosensors for future biological diagnostic applications.
  • Publication
    Numerical Simulation on the Impact of Back Gate Voltage in Thin Body and Thin Buried Oxide of Silicon on Insulator (SOI) MOSFETs
    ( 2023-10-01)
    Koay K.Y.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Ramzan Mat Ayub
    ;
    Mohd Khairuddin Md Arshad
    Silicon-on-Insulator (SOI) technology provides a solution for controlling Short-Channel Effects (SCEs) and enhancing the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, scaling down SOI MOSFETs to a nanometer scale does not necessarily yield further scaling benefits. Introducing multiple gates, such as a double gate configuration, can effectively mitigate SCEs. Nonetheless, fabricating a flawless double gate structure is an exceedingly challenging endeavor that remains unrealized. The adoption of a back gate bias, with an asymmetrical thickness arrangement between the front and back gates, mimicking the behavior of a double gate, offers an alternative approach. This approach has the potential to modify the electrical characteristics of the device, thus potentially leading to improved control over SCEs. In this study, we employed 2D simulations using Atlas to investigate the influence of back gate biases, namely,-2.0 V, 0 V, and 2.0 V on a 10 nm silicon thickness at the top and a 20 nm buried oxide thickness for n-channel MOSFETs. We focused on key parameters, including threshold voltage (VTh), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS). The results demonstrate that a negative back gate bias is the most favorable configuration, as it yields superior performance. This translates into more effectively controlled SCEs across all the parameters of interest.
  • Publication
    Impact of Nanogap Thickness on Dielectric-Modulated Field-effect Transistor Biosensor Performance for Uncharged Biomolecules Detection
    ( 2023-01-01)
    Jasmi M.S.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohd Khairuddin Md Arshad
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Nur Hamidah Abdul Halim
    ;
    Rahman S.F.A.
    ;
    Shaifullah. A. S M.
    ;
    Adilah Ayoib
    ;
    Ibrahim M.M.
    Uncharged biomolecules sensing performance of dielectric-modulated field-effect transistor (DMFET) biosensor at various nanogap thickness via semiconductor device simulation tool was assessed in this work. The device structures with 10 nm-, 15 nm-, and 20 nm-thick nanogap were constructed for this investigation. Each device structure was applied with dielectric constant ranging from 2 to 7 at the nanogap representing the presence of various biomolecules. These device structures were electrically simulated by supplying gate voltage from 0 V to 2 V and biased with drain voltage of 0.05 V for linear region of operation. Based on the extracted drain current, the reduction of nanogap thickness increase capacitance at the nanogap region. In additional, increase in nanogap's dielectric constant causing an increase of its capacitance, and translated into higher output drain current. Sensitivity calculation and analysis shows DMFET biosensor with 10 nm-thick nanogap demonstrated the highest sensitivity with 6.896 μA/dec, which possibly permit enhanced sensing of uncharged biomolecule.
  • Publication
    Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing
    ( 2021-07-21)
    Tan Y.M.
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Norhayati Sabani
    ;
    Teoh X.Y.
    ;
    Mohd Khairuddin Md Arshad
    ;
    Subash Chandra Bose Gopinath
    ;
    Rahman S.F.A.
    ;
    Uda Hashim
    The paper investigated on performance in charge sensing for substrate-gate integrated silicon nanowire field-effect transistor biosensor at different thickness of the buried oxide layer, sandwiched in between the top-silicon and substrate layers. The device structures with different buried oxide thickness ranging from 100 to 200 nm were designed and simulated using the Silvaco ATLAS device simulation software. The increase of buried oxide thickness reduced the strength of induced electric field that contributes to the formation of inversion layer for current flow through the silicon nanowire channel, hence contributed to the increase in threshold voltage. For simulation of charge sensing, the device demonstrated the ability to identify different interface charge values ranging from -5×1010 to -9×1010 e· cm-2 applied on the surface of the silicon nanowire channel to represent target charge biomolecules that bound to the biosensor in actual detection. Significant change in threshold voltage can be observed due to the applied interface charge density values and was evaluated to determine the sensitivity for charge sensing performance. The device shows better performance when designed with buried oxide thickness of 200 nm at sensitivity of 1.151 V/e· cm-2.
  • Publication
    Fabrication and simulation of silicon nanowire pH sensor for Diabetes Mellitus detection
    ( 2023-04)
    C. Y. Chean
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohamad Faris Mohamad Fathil
    ;
    M. I. Hashim
    ;
    Nur Hamidah Abdul Halim
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Syamsul Syahrun Awang@Hashim
    ;
    Rozaimah A.T
    Diabetes Mellitus (DM) is a disease failed to control the balance of blood sugar level due to lack of insulin thereby it effect human health. In Malaysia, there are around 3.9 millions people aged 18 years old and above have diabetes according to National Health and Morbidity Survey 2019. Silicon Nanowire is a nanostructure which has ultra-high sensitivity and non-radioactive that has potential given good performances when applied on pH sensor and biosensor. Silicon nanowire pH sensor and biosensor is an electronic sensor that investigated to improve the sensitivity and accuracy for detecting DM. This project consists of two parts, which are fabrication of silicon nanowire pH sensor and simulation of silicon nanowire biosensor as preliminary study. In fabrication, silicon nanowire of pH sensor is fabricated by conventional lithography process, reaction ion etching (RIE) and metallization to achieved the width of 100 nm silicon nanowire. The pH6, pH7, pH10 and DI water as analytes to analysis the current-voltage (I-V) characteristics of silicon nanowire pH sensor. In second part, the silicon nanowire biosensor as preliminary study is done simulation by Silvaco ATLAS devices simulator. The silicon nanowire with 30 nm in height and 20 nm in width of biosensor is designed and simulated to analyze the performance in terms of sensitivity. I-V characteristics of silicon nanowire biosensor according to different concentration of negative interface charge is determined. The negative interface charge represent as the Retinol Binding Protein 4 (RBP4) which is used to diagnose DM. The I-V characteristic based on the change in current, resistance and conductance to determine sensitivity. Lastly, the sensitivity of silicon nanowire pH sensor obtained 23.9 pS/pH while the sensitivity of simulated silicon nanowire biosensor obtained 3.91 nS/e.cm2. The results shown the more negative charge of concentration analyte attached on surface silicon nanowire has been accumulated more current flow from drain terminal to source terminal. It leads to the resistance becomes highest and obtained good sensitivity. In summary, the silicon nanowire pH sensor exhibited good performance and high sensitivity in detection pH level. The simulated silicon nanowire biosensor is capable of detecting biomolecular interactions charges to obtained high sensitive and accuracy result.