Banu Poobalan
Thumbnail Image
Preferred name
Banu Poobalan
Official Name
Banu, Poobalan
Alternative Name
Poobalan, Banu
Poobalan, B.
Main Affiliation
Scopus Author ID
36344935600
Researcher ID
GWV-1775-2022

Research Output
Now showing 1 - 4 of 4
  • Publication
    The modelling of SiC Gate Oxide thickness based on thermal oxidation temperatures and durations for high-voltage applications
    (Walailak University, 2023)
    Nuralia Syahida Hashim
    ;
    Banu Poobalan
    ;
    Nor Farhani Zakaria
    ;
    Manikandan Natarajan
    ;
    Safizan Shaari
    This research has shown that the oxide thickness for silicon carbide (SiC) based wide materials can be predicted using regression techniques in wet/dry nitrided or wet/dry non-nitrided thermal oxidation process conditions for high voltage applications by employing 2 different regression techniques: Polynomial and linear regression. The R-squared (R2) and Mean Absolute Percentage Error (MAPE) techniques are used to evaluate the regression models. Furthermore, this work investigates and presents a calculation of gate oxide thickness that is correlated to gate voltage ranges for high voltage applications. In this work, the thermal oxidation process environment is classified into 3 different processing conditions: conventional (dry and wet), dry nitrided (NO,N2O), and wet nitrided (HNO3 vapour). The findings from this study showed that wet oxidation combined with nitrided elements can produce thicker and better-quality gate oxide as compared to conventional dry and wet oxidation techniques. The outcome of this work clearly shows that gate oxide thickness may be derived from silicon carbide-based wide-bandgap materials utilizing linear and polynomial approaches using thermal oxidation durations at different temperatures for high-power applications. The regression models and formulations produced in this work are expected to aid the researchers in determining appropriate oxide thickness under practicable process conditions, with the exception of real thermal oxidation process conditions. Hence, the outcome of this work is expected to save the processing time, material, and cost of the power semiconductor device fabrication technology, mainly for high voltage applications.
  • Publication
    A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device
    ( 2023-12-01)
    Sha’ari N.Z.A.A.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Ahmad M.F.
    ;
    Mohd Natashah Norizan
    ;
    Ili Salwani Mohamad
    ;
    Mohd Fairus Ahmad
    ;
    Shamsul Amir Abdul Rais
    ;
    Banu Poobalan
    ;
    Norhayati Sabani
    The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which offers improved efficiency and reduced energy consumption. Optimization in terms of the variation in the interface charges, metal work function, and doping concentration values has been performed by means of a 2D TCAD device simulator. The results showed that the SSD can block up to 600 V of voltage with an optimum interface charge value of 1013 cm-2, making them suitable for higher voltage applications. Furthermore, it also found that the work function of the metal contact affected the forward voltage value, impacting the current flow in the device. Variation in doping concentrations also resulted in higher breakdown voltages and significantly increased forward current, leading to an increased power rating of 27 kW. In conclusion, the usage of 4H-SiC-based SSDs shows a usable potential for high-voltage applications with optimized parameters. The results from this research can facilitate the implementation of SSD in the development of high-power semiconductor devices for various industrial applications.
      5  56
  • Publication
    A study on electrical performance of SiC-based self-switching diode (SSD) as a high voltage high power device
    ( 2023-12)
    N. Z. A. A. Sha’ari
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Mohd Natashah Norizan
    ;
    Ili Salwani Mohamad
    ;
    Mohd Fairus Ahmad
    ;
    Shamsul Amir Abdul Rais
    ;
    Banu Poobalan
    ;
    Norhayati Sabani
    ;
    A. F. A. Rahim
    The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which offers improved efficiency and reduced energy consumption. Optimization in terms of the variation in the interface charges, metal work function, and doping concentration values has been performed by means of a 2D TCAD device simulator. The results showed that the SSD can block up to 600 V of voltage with an optimum interface charge value of 1013 cm-2, making them suitable for higher voltage applications. Furthermore, it also found that the work function of the metal contact affected the forward voltage value, impacting the current flow in the device. Variation in doping concentrations also resulted in higher breakdown voltages and significantly increased forward current, leading to an increased power rating of 27 kW. In conclusion, the usage of 4H-SiC-based SSDs shows a usable potential for high-voltage applications with optimized parameters. The results from this research can facilitate the implementation of SSD in the development of high-power semiconductor devices for various industrial applications.
      36  15
  • Publication
    The study of photovoltaic systems performance using various azimuth angles and solar array tilt positions
    ( 2020-01-07)
    Banu Poobalan
    ;
    Haziah Abdul Hamid
    ;
    Noor Hasnizam Hanafi
    ;
    Wooi Chin Leong
    The study of photovoltaic energy and load predictions have become essential with the increase of energy demand. The objective of this paper is to present an analytical study on the performance of photovoltaic system with various azimuth angles and solar array tilt positions. The output power of a solar module is mainly dependent on its tilt position, solar irradiation, type of solar cell, and the technical properties of the module. The data used in this work consist of two different locations. The outcome of this work shows that the energy production influenced heavily on the weather conditions, location, azimuth angles and tilt positions. Within this work, parameters such as planes-of-array irradiance, net to inverter output power, net to grid output power and performance ratio have been studied. The developed analytical study is anticipated to provide a better understanding on the energy production and load usage in accordance with suitable tilt angle of solar array in a specific location.
      3  31