Sohiful Anuar Zainol Murad
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Preferred name
Sohiful Anuar Zainol Murad
Official Name
Sohiful Anuar, Zainol Murad
Alternative Name
Murad, S. A.Zainol
Murad, S. A.Zainol
Anuar, Zainol Murad Sohiful
Zainol Murad, S.A.
Sohiful, Z. M.A.
Main Affiliation
Scopus Author ID
16643180100
Researcher ID
I-1082-2019

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  • Publication
    A 0.89 to 2.1 GHz Tunable Power Amplifier for Multi-band Transmitter
    ( 2023-01-01)
    Sapawi R.
    ;
    Kipli K.
    ;
    Julai N.
    ;
    Hong Ping K.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Awg Salleh D.N.S.
    This paper presents a multi-band power amplifier by using Benzocyclobutene inductor and tunable barium strontium titanate capacitor to achieve high quality (Q) factor to improve narrow bandwidth in tunable of power amplifier. The proposed power amplifier employed two stages with resistive shunt feedback at the input stage to provide a broadband gain and steady wideband input matching. Tunable frequency range from 0.89 GHz to 2.1 GHz is conducted by tunable BST capacitor from 1 pF to 20 pF. The tunable power amplifier achieves high power gain, good input and output matching, low power consumption and good power added efficiency over all frequency range of interest. It can be concluded that the proposed multi-band power amplifier is quite promising for future mobile terminals application.
  • Publication
    Dual band low noise amplifier: A review analysis
    ( 2024-02-08)
    Azizan A.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Faizah Abu Bakar
    ;
    Manaf A.A.
    This paper discusses a few earlier efforts in the field of multiband low noise amplifier design (LNA). This study will look at a variety of modern multiband LNA designs, focusing on four topologies: induction matching with notch filter, current reused with cascode, current reused with notch filter, and common source with external capacitor. Each architecture has its own set of benefits and drawbacks. In the future, it will be necessary to strike a balance between tradeoffs, eliminate drawbacks, and achieve optimal multiband LNA performance.
  • Publication
    The analysis of low phase nonlinearity 3.1-6 GHz CMOS power amplifier for UWB system
    ( 2017-01-01)
    Sapawi R.
    ;
    Salleh D.
    ;
    Sahari S.
    ;
    Masra S.
    ;
    Mat D.
    ;
    Kipli K.
    ;
    Sohiful Anuar Zainol Murad
    Low phase nonlinearity is important criteria in power amplifier (PA) especially in ultra-wideband system so that the output will remain original identity. Up to date there is no analysis study have been established in achieving low group delay PA in UWB technology, therefore this paper is to examined the factors that affect low phase nonlinearity in 3.1-6.0 GHz PA using two-stage amplifier with shunt resistive feedback technique for UWB system. The proposed PA adopts two stages amplifier together with inter-stage circuit to obtain adequate flatness of the gain. The shunt resistive feedback topology is used to have very wide input matching. The inductive peaking technique and Class A amplifier is adopted to obtain high gain flatness, low phase nonlinearity and linearity simultaneously. The analysis shows that the dominant factor is identified for low phase nonlinearity in UWB PA. The proposed PA achieves the average gain of 10±1 dB, S11<-6dB, S22< -7 dB, and phase nonlinearity of ±195.5 ps. A good linearity and power consumption are obtained. Therefore, these key performance factors of low phase nonlinearity can be applied to facilitate other researchers working in the area of power amplifier circuit design.
  • Publication
    Pseudo-Differential Transconductor Circuit for a Low Supply Voltage Application
    ( 2021-07-26)
    Mohd Sabari N.D.I.B.
    ;
    Abu Bakar F.B.
    ;
    Azizan A.B.
    ;
    Sohiful Anuar Zainol Murad
    This paper presents a pseudo-differential transconductor circuit. Operational Transconductance Amplifier (OTA) is a standout amongst the most functional and major circuit elements within the analog and mixed-signal circuit style. It is additionally one of the more intricate cells to plan. Due to the rising performance of new generation MOS transistors, the complexity of integrated circuit is continuously increasing with time. The reduction in component sizing is one of the main reasons for integrating millions of transistors into a single chip. There is a great demand for battery powered equipment like a laptop, wireless communication, and implantable devices. In all these devices, it is essential to maintain low power dissipation to achieve good battery life and weight. The main feature of the research is to design a pseudodifferential transconductor circuit for a low supply voltage application with the targeted gain greater than 20 dB using Mentor Graphics software. The designs are done in Pyxis Schematic and Pyxis Layout using eldo platform for simulation to simulate the functionality of the transconductor circuit. From the postlayout simulation, with supply voltage of 1.2 V, the gain of 30 dB with cut-off frequency of 398 kHz has been achieved.
  • Publication
    The production of Malaysia bamboo charcoal (Gigantochloa albociliata) as the potential absorbent
    ( 2017-09-26)
    Siti Salwa Mat Isa
    ;
    Muhammad M. Ramli
    ;
    Nor Azura Malini Ahmad Hambali
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Sohiful Anuar Zainol Murad
    Bamboo charcoal was successfully carbonized at 500 °C and 800 °C using Malaysia buluh madu (Gigantochloa albociliata). Structural analysis was done using Atomic Force Microscopy (AFM) in two different solvents; ethanol and DI water. The functional groups of bamboo charcoal were confirmed using Fourier Transform Infrared Spectroscopy (FTIR). The adsorption property of bamboo charcoal solution was investigated at different concentrations of 0.2, 0.4 and 0.7 mg/mL, using methylene blue test and characterized using UV-Vis Spectroscopy. Based on the adsorption investigation, it shows that the adsorption was increased as the concentration increased. It was also shown that at higher temperature and longer duration time, the adsorption process is improved.
  • Publication
    Interdigitated electrodes as impedance and capacitance biosensors: A review
    ( 2017-09-26)
    Mazlan N.
    ;
    Muhammad Mahyiddin Ramli
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Dewi Suriyani Che Halin
    ;
    Isa S.
    ;
    Talip L.
    ;
    Nuaim Siddiqi Danial
    ;
    Sohiful Anuar Zainol Murad
    Interdigitated electrodes (IDEs) are made of two individually addressable interdigitated comb-like electrode structures. IDEs are one of the most favored transducers, widely utilized in technological applications especially in the field of biological and chemical sensors due to their inexpensive, ease of fabrication process and high sensitivity. In order to detect and analyze a biochemical molecule or analyte, the impedance and capacitance signal need to be obtained. This paper investigates the working principle and influencer of the impedance and capacitance biosensors. The impedance biosensor depends on the resistance and capacitance while the capacitance biosensor influenced by the dielectric permittivity. However, the geometry and structures of the interdigitated electrodes affect both impedance and capacitance biosensor. The details have been discussed in this paper.
  • Publication
    CMOS power amplifier design techniques for UWB communication: A review
    ( 2017-01-01)
    Sapawi R.
    ;
    Mohamad D.
    ;
    Yusuf D.
    ;
    Sahari S.
    ;
    Salleh D.
    ;
    Hazis N.
    ;
    Sohiful Anuar Zainol Murad
    This paper reviews CMOS power amplifier (PA) design techniques in favour of ultra-wideband (UWB) application. The PA circuit design is amongst the most difficult delegation in developing the UWB transmitter due to conditions that must be achieved, including high gain, good input and output matching, efficiency, linearity, low group delay and low power consumption. In order to meet these requirements, many researchers came up with different techniques. Among the techniques used are distributed amplifiers, resistive shunt feedback, RLC matching, shunt-shunt feedback, inductive source degeneration, current reuse, shunt peaking, and stagger tuning. Therefore, problems and limitation of UWB CMOS PA and circuit topology are reviewed. A number of works on the UWB CMOS PA from the year 2004 to 2016 are reviewed in this paper. In recent developments, UWB CMOS PA are analysed, hence imparting a comparison of performance criteria based on several different topologies.
  • Publication
    Review of efficiency CMOS class AB power amplifier topology in gigahertz frequencies
    ( 2022-01-01)
    Sapawi R.
    ;
    Ahmad D.A.S.
    ;
    Ping K.H.
    ;
    Julai N.
    ;
    Kipli K.
    ;
    Sawawi M.
    ;
    Masra S.M.W.
    ;
    Sohiful Anuar Zainol Murad
    This paper reviewed the efficiency of CMOS class AB power amplifier topology especially in gigahertz frequencies. CMOS class AB power amplifier is a compromise between class A and class B in terms of linearity and efficiency between 50% to 78.5%. However, CMOS class AB power amplifier cannot have good linearity and efficiency simultaneously due to the breakdown in gate-oxide voltage and effects from hot carrier. The breakdown of oxide prevents optimum drain signal and the effect from hot carrier will reduce the quality of the overall PA design. Several works from year 1999 to 2019 with different topology such as multiple gated transistor, cascode, feedforward linearization, differential circuit, transformer combining method with common source harmonic termination and combination of a dual-switching transistor with a third harmonic tuning technique are discussed and the performances of the power amplifier are compared. The best three CMOS class AB power amplifier topologies were chosen in terms of high efficiency. The topologies are two stages with integrated input and interstage matching, Doherty amplifier combined with drain modulation based architectures and self-biased cascode topology that obtained power added efficiency of 45%, 43% and 42%, respectively. Key performance indicators for class AB power amplifier include frequency, power added efficiency, gain and output power are also discussed in this paper.
      1
  • Publication
    A Study and Analysis of High Efficiency CMOS Power Amplifier for IoT Applications
    ( 2021-03-01)
    Yi K.S.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Shaiful Nizam Mohyar
    This paper presents a study and analysis of high efficiency CMOS power amplifier (PA) for Internet of Thing (IoT) application. The studied mainly focused on the topology employed in designing high efficiency PA in gigahertz range frequencies. This study covers the basic class-E PA and the topologies in designing class-E PA such as single-stage, two-stage, multistage and differential. The circuits structure and the performances of class-E PA is discussed. The analysis is focusing on the efficiency of the proposed PA. The latest CMOS PAs developments have been studied and a summarization of the performance specification for different topologies are elaborated.
      1
  • Publication
    A 28 GHz high efficiency fully integrated 0.18 µm combined CMOS power amplifier using power divider technique for 5G millimeter-wave applications
    ( 2020-04-01)
    Hasan A.F.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Faizah Abu Bakar
    ;
    Zulkifli T.Z.A.
    A 28 GHz power amplifier (PA) using CMOS 0.18 µm Silterra process technology for milimeter wave applications is reported. Maximizing the power added efficiency (PAE) and output power are achieved by optimize the circuit with power divider and cascade configuration. In addition, reverse body bias is also employed for realizing excellent PAE and power consumption. A three stage CMOS PA with power combiner is designed and simulated. The simulation results show that the proposed PA consumes 62.56 mW and power gain (S21) of 8.08 dB is achieved at 28 GHz. The PA achieves saturated power (Psat) of 12.62 dBm and maximum PAE of 23.74% with output 1-dB compression point (OP1dB) 10.85 dBm. These results demonstrate the proposed power amplifier architecture is suitable for 5G applications.
      1