Nazuhusna Khalid
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Preferred name
Nazuhusna Khalid
Official Name
Nazuhusna, Khalid
Alternative Name
Nazuhusna, Khalid
Khalid, N.
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Scopus Author ID
35208616600
Researcher ID
CZJ-6151-2022

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A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate

2022-12 , Nazuhusna Khalid , Aimi Noorliyana Hashim , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli , Mohd Norhafiz Hashim , M.S Mispan

A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.

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Analysis of different piezoelectric materials on the film bulk acoustic wave resonator

2023-12 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Hasnizah Aris , M. S. Mispan , N. Aiman Syahmi

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 μm × 25 μm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

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The Design and Analysis of High Q Factor Film Bulk Acoustic Wave Resonator for Filter in Super High Frequency

2021-12-01 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Nur Anira Asyikin Hashim , Shahrir Rizal Kasjoo , Zaliman Sauli , Lam Hok Lang , Chow Shi Qi

Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.

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Analysis on square and circular inductor for a high Q-factor inductor

2021-12 , Aimi Noorliyana Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.

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Optimization of Symmetric Inductor Parameter for a High Q-Factor Inductor for Wireless Application

2021-08-02 , Nur Anira Asyikin Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

A high Q-factor (Quality Factor) inductor is essential in Radio Frequency (RF) circuits to achieve demanding specifications for low power consumption and low cost. One of the primary disadvantages of Si-based IC advancements for RF circuit configuration is the Low Q-factor inductor because of the thin metallization and Si substrate loss. This paper presents the comparative analysis of various inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band in the range between 10GHz and 20GHz. Three topologies of inductors are designed, which are square, circular, and symmetric. Comparison is made amongst the three to determine the highest Q-factor. Inductors are designed on Silicon-On-Sapphire (SOS) because of their advantages having high resistivity and low parasitic capacitance. The analysis of various topologies inductors on the Q-factor, inductance, and resistance are inspected. Results show that the symmetric inductor has the highest Q-factor of 101.002 at 44.2 GHz for 0.198nH and a Q-factor of 60.038 at 12GHz inductance 0.178nH with the same parameter. Further optimization of the parameters such as width, the thickness of metal, and outer diameter for the symmetric inductor shows that the highest Q-factor of 50.22 at 12GHz has been achieved. This paper concludes that the inductor's symmetric topology designed on the SOS substrate has a high Q-factor in the range of 10GHz to 20GHz compared to the square and circular inductor.

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Publication

Optimization of Symmetric Inductor Parameter for a High Q-Factor Inductor for Wireless Application

2021-08-02 , Nur Anira Asyikin Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

A high Q-factor (Quality Factor) inductor is essential in Radio Frequency (RF) circuits to achieve demanding specifications for low power consumption and low cost. One of the primary disadvantages of Si-based IC advancements for RF circuit configuration is the Low Q-factor inductor because of the thin metallization and Si substrate loss. This paper presents the comparative analysis of various inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band in the range between 10GHz and 20GHz. Three topologies of inductors are designed, which are square, circular, and symmetric. Comparison is made amongst the three to determine the highest Q-factor. Inductors are designed on Silicon-On-Sapphire (SOS) because of their advantages having high resistivity and low parasitic capacitance. The analysis of various topologies inductors on the Q-factor, inductance, and resistance are inspected. Results show that the symmetric inductor has the highest Q-factor of 101.002 at 44.2 GHz for 0.198nH and a Q-factor of 60.038 at 12GHz inductance 0.178nH with the same parameter. Further optimization of the parameters such as width, the thickness of metal, and outer diameter for the symmetric inductor shows that the highest Q-factor of 50.22 at 12GHz has been achieved. This paper concludes that the inductor's symmetric topology designed on the SOS substrate has a high Q-factor in the range of 10GHz to 20GHz compared to the square and circular inductor.

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Publication

The design and analysis of high Q factor film bulk acoustic wave resonator for filter in super high frequency

2021-12 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Nur Anira Asyikin Hashim , Shahrir Rizal Kasjoo , Zaliman Sauli , Lam Hok Lang , Chow Shi Qi

Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.

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Publication

Characteristics of film bulk acoustic wave resonator using different electrode materials

2021-07-21 , Nurul Izza Mohd Nor , Jing Y.W. , Nazuhusna Khalid

Film bulk acoustic wave resonator (FBAR) is a device that consists of a thin-film piezoelectric, which is sandwiched between the top and bottom electrodes. FBAR has been widely used in radio frequency (RF) front-end circuits such as RF filters due to its advantages of high quality (Q) factor. The performance of FBAR is highly related to the piezoelectric material. The piezoelectric material such as aluminum nitride (AlN) and zinc oxide (ZnO) are commonly used in FBAR. Other than piezoelectric material, another important element in designing an FBAR is the electrode materials. Different electrode materials affect the performance of FBAR in terms of Q factor and electromechanical coupling coefficient (k2eff) due to their material properties. Therefore, in this work, FBARs operating at frequencies of 5 GHz to 10 GHz by using AlN as the piezoelectric material with different electrode materials, which are molybdenum (Mo) and aluminum (Al) were designed. The performance of the designed FBARs were compared in terms of Q factor and k2eff. Based on the results, the Q factor of FBAR with Mo as electrodes achieved the highest value of 16300 at 5 GHz, while the Q factor of FBAR with Al as electrodes achieved the highest value of 13726 at 5 GHz. The k2eff of FBAR with Al as electrodes achieved the highest value of 6.71% at 7 GHz, while FBAR with Mo as electrodes achieved the highest coupling coefficient of 5.78% at 6 GHz.

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Publication

Analysis on Square and Circular Inductor for a High Q-Factor Inductor

2021-12-01 , Nur Anira Asyikin Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.

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