A high Q-factor (Quality Factor) inductor is essential in Radio Frequency (RF) circuits to achieve demanding specifications for low power consumption and low cost. One of the primary disadvantages of Si-based IC advancements for RF circuit configuration is the Low Q-factor inductor because of the thin metallization and Si substrate loss. This paper presents the comparative analysis of various inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band in the range between 10GHz and 20GHz. Three topologies of inductors are designed, which are square, circular, and symmetric. Comparison is made amongst the three to determine the highest Q-factor. Inductors are designed on Silicon-On-Sapphire (SOS) because of their advantages having high resistivity and low parasitic capacitance. The analysis of various topologies inductors on the Q-factor, inductance, and resistance are inspected. Results show that the symmetric inductor has the highest Q-factor of 101.002 at 44.2 GHz for 0.198nH and a Q-factor of 60.038 at 12GHz inductance 0.178nH with the same parameter. Further optimization of the parameters such as width, the thickness of metal, and outer diameter for the symmetric inductor shows that the highest Q-factor of 50.22 at 12GHz has been achieved. This paper concludes that the inductor's symmetric topology designed on the SOS substrate has a high Q-factor in the range of 10GHz to 20GHz compared to the square and circular inductor.
