Publication:
Analysis on Square and Circular Inductor for a High Q-Factor Inductor
Analysis on Square and Circular Inductor for a High Q-Factor Inductor
Date
2021-12-01
Authors
Nur Anira Asyikin Hashim
Nazuhusna Khalid
Nurul Izza Mohd Nor
Shahrir Rizal Kasjoo
Zaliman Sauli
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Abstract
This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.
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Keywords
HFSS Software | High Q-Factor Inductor | Silicon-on-Sapphire (SOS)