Film bulk acoustic wave resonator (FBAR) is a device that consists of a thin-film piezoelectric, which is sandwiched between the top and bottom electrodes. FBAR has been widely used in radio frequency (RF) front-end circuits such as RF filters due to its advantages of high quality (Q) factor. The performance of FBAR is highly related to the piezoelectric material. The piezoelectric material such as aluminum nitride (AlN) and zinc oxide (ZnO) are commonly used in FBAR. Other than piezoelectric material, another important element in designing an FBAR is the electrode materials. Different electrode materials affect the performance of FBAR in terms of Q factor and electromechanical coupling coefficient (k2eff) due to their material properties. Therefore, in this work, FBARs operating at frequencies of 5 GHz to 10 GHz by using AlN as the piezoelectric material with different electrode materials, which are molybdenum (Mo) and aluminum (Al) were designed. The performance of the designed FBARs were compared in terms of Q factor and k2eff. Based on the results, the Q factor of FBAR with Mo as electrodes achieved the highest value of 16300 at 5 GHz, while the Q factor of FBAR with Al as electrodes achieved the highest value of 13726 at 5 GHz. The k2eff of FBAR with Al as electrodes achieved the highest value of 6.71% at 7 GHz, while FBAR with Mo as electrodes achieved the highest coupling coefficient of 5.78% at 6 GHz.
