Dewi Suriyani Che Halin
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Preferred name
Dewi Suriyani Che Halin
Official Name
Halin, Dewi Suriyani Che
Alternative Name
Che Halin, Dewi Suriyani
Che Halin, D. S.
Suriyani Che Halin, Dewi
Halin, Dewi Suriyani Che
Halin, D. S.Che
Halin, D. S.C.
D. S., Che Halin
Main Affiliation
Scopus Author ID
36158106300
Researcher ID
AAC-9478-2019

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  • Publication
    Microstructural Study on Ag/TiO2 Thin Film
    ( 2022-07-01)
    Razak K.A.
    ;
    Dewi Suriyani Che Halin
    ;
    Azani A.
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Mahmed N.
    ;
    Chobpattana V.
    ;
    Kaczmarek L.
    ;
    Sandu A.V.
    ;
    Garus S.
    The synthesis of Ag/TiO2 thin film was carried out by the sol–gel spin coating method using ITO glass as a substrate in a short period of stirring time, which is less than 25 min. The produced films were annealed in a furnace at 500◦C for 1 h. Various concentrations of AgNO3, from 0.1 to 0.9 M, were added. The as-prepared films were characterized using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results indicate that all films showed a single phase of anatase, TiO2. Ag/TiO2 thin films with 0.1 M of AgNO3 solution show that the elements form networks connecting Ag/TiO2 microstructures forming a porous, consistent, and continuous layer on the substrate surface.
      2
  • Publication
    Microstructural Study on Ag/TiO2 Thin Film
    ( 2022-07-01)
    Kamrosni Abdul Razak
    ;
    Dewi Suriyani Che Halin
    ;
    Azliza Azani
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Norsuria Mahmed
    ;
    Chobpattana V.
    ;
    Kaczmarek L.
    ;
    Sandu A.V.
    ;
    Garus S.
    The synthesis of Ag/TiO2 thin film was carried out by the sol–gel spin coating method using ITO glass as a substrate in a short period of stirring time, which is less than 25 min. The produced films were annealed in a furnace at 500◦C for 1 h. Various concentrations of AgNO3, from 0.1 to 0.9 M, were added. The as-prepared films were characterized using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results indicate that all films showed a single phase of anatase, TiO2. Ag/TiO2 thin films with 0.1 M of AgNO3 solution show that the elements form networks connecting Ag/TiO2 microstructures forming a porous, consistent, and continuous layer on the substrate surface.
      1
  • Publication
    Synthesis of Zn/TiO2 Thin Films for Self-Cleaning Applications
    ( 2022-07-01)
    Dewi Suriyani Che Halin
    ;
    Abidin A.S.Z.
    ;
    Azani A.
    ;
    Mohd Arif Anuar Mohd Salleh
    ;
    Kamrosni Abdul Razak
    ;
    Mohd. Mustafa Al Bakri Abdullah
    ;
    Muhammad Mahyiddin Ramli
    ;
    Sandu A.V.
    ;
    Vizureanu P.
    ;
    Kaczmarek L.
    ;
    Garus S.
    ;
    Garus J.
    Titanium dioxide (TiO2) thin film has been widely used in semiconductor applications. The surface modification on TiO2 has been done by adding zinc (Zn) in order to improve surface wettability and enhance the photocatalysis efficiency for solar cell applications. Self-cleaning technology is very important to sustain the efficiency of the solar cell and reduce the cost of the maintenance of the solar cell. In this work, the sol–gel method was used due to the economic factor and its best efficiency. The sol–gel method is a wet chemical technique involving several steps, such as hydrolysis and polycondensation, gelation, aging, drying, densification, and crystallization. The X-Ray diffraction pattern shows that anatase and rutile phases were detected at 2θ = 36.3864◦. It was clearly seen at 4% Zn-doped TiO2 annealed at 400◦C that due to the increment of Zn concentration, the phase transformed from the anatase phase to the rutile phase at high temperature. The scanning electron microscope micrograph shows that Zn concentration affects grain size. The water contact angle produced when 4% Zn-doped TiO2 was annealed at 300◦C, was 18◦ — higher than in the sample of 4% Zn-doped TiO2 annealed at 400◦C. These results clearly showed that the dopant concentration and the annealing temperature influence the properties of TiO2 for a self-cleaning application.
      2