Sanna Taking
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Preferred name
Sanna Taking
Official Name
Sanna, Taking
Alternative Name
Taking, Sanna
Taking, S.
Main Affiliation
Scopus Author ID
35559852900
Researcher ID
I-7284-2015

Research Output

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  • Publication
    Self-switching diodes as RF rectifiers: Evaluation methods and current progress
    ( 2019-06-01)
    Zakaria N.
    ;
    Shahrir Rizal Kasjoo
    ;
    Isa M.
    ;
    Zarimawaty Zailan
    ;
    Arshad M.
    ;
    Sanna Taking
    In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.
  • Publication
    TCAD simulation of AlGaN/GaN HEMT grown on high-resistivity silicon substrate
    ( 2024-02-08)
    Sanna Taking
    ;
    Ofiare A.
    ;
    Ahmad N.
    ;
    Musa A.Z.
    ;
    Sendekisager K.
    ;
    Isa M.M.
    ;
    Shahrir Rizal Kasjoo
    ;
    Wasige E.
    This paper studies GaN device structure on silicon substrates. The fabricated device, with LG of 4-μm and WG of 100-μm, demonstrates a maximum drain current of 780mA/mm and a threshold voltage of - 4V. The two-dimensional Silvaco simulator tools are used to analyze and model the fabricated device. The simulation results closely match the experimental findings, validating the developed model's accuracy. These outcomes signify that the study can be a reference for modeling other GaN-based devices in future material growth and process development.
  • Publication
    Non-linear analysis of Self-Switching Diodes as microwave rectifiers
    ( 2017-01-01)
    Shahrir Rizal Kasjoo
    ;
    Zulfadhli Zailan
    ;
    Sanna Taking
    ;
    Wan Zuki Azman Wan Muhamad
    ;
    Muammar Mohamad Isa
    ;
    Arshad M.
    A planar device known as the Self-Switching Diode (SSD) has been demonstrated as a high-speed rectifier, up to terahertz frequencies. The rectifying properties of SSD are dependent on a nonlinear current-voltage characteristic of the device. In this research, the rectification of two SSD rectifiers has been reported and their performances were evaluated. The observed results showed a good agreement with the nonlinear theoretical analysis of both rectifiers by means of a Taylor series which can be utilized in improving the rectifying performance of any diode-based rectifier specifically for diodes with tunable threshold voltage such as SSDs.
  • Publication
    Dielectric and microstructural properties of BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics
    ( 2017)
    Fatin Adila Ismail
    ;
    Rozana Aina Maulat Osman
    ;
    Mohd Sobri Idris
    ;
    Sanna Taking
    ;
    Zul Azhar Zahid Jamal
    BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics were investigated regarding their dielectric and microstructure properties via conventional solid state reaction method. The phase pure samples were obtained when heated at 1400°C for overnight. The effect of Er3+ doped into BaTiO3 on dielectric properties and microstructural properties was investigated for composition of BaTiO3 and Ba0.9925Er0.0075TiO3. The analysis was made by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Impedance Analyzer. The XRD patterns of BaTiO3 and Ba0.9925Er0.0075TiO3 are phase pure and identical with tetragonal perovskite structure with space group of P4mm. The lattice parameters and unit cell volume of BaTiO3 increased by doping with Erbium as the crystallite size decreased. Measurements of dielectric properties were carried out as a function of temperature up to 200°C at different frequencies. Ba0.9925Er0.0075TiO3 exhibit the high value of dielectric constant (ε=6179) at Curie temperature (TC) of 120°C. SEM analysis of BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics showed that the grain sizes of BaTiO3 and Ba0.9925Er0.0075TiO3 were ranged from 3.3µm-7.8µm and 2.2µm-4.7µm respectively.