Sanna Taking
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Preferred name
Sanna Taking
Official Name
Sanna, Taking
Alternative Name
Taking, Sanna
Taking, S.
Main Affiliation
Scopus Author ID
35559852900
Researcher ID
I-7284-2015

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Non-linear analysis of Self-Switching Diodes as microwave rectifiers

2017-01-01 , Shahrir Rizal Kasjoo , Zulfadhli Zailan , Sanna Taking , Wan Zuki Azman Wan Muhamad , Muammar Mohamad Isa , Arshad M.

A planar device known as the Self-Switching Diode (SSD) has been demonstrated as a high-speed rectifier, up to terahertz frequencies. The rectifying properties of SSD are dependent on a nonlinear current-voltage characteristic of the device. In this research, the rectification of two SSD rectifiers has been reported and their performances were evaluated. The observed results showed a good agreement with the nonlinear theoretical analysis of both rectifiers by means of a Taylor series which can be utilized in improving the rectifying performance of any diode-based rectifier specifically for diodes with tunable threshold voltage such as SSDs.

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Simulation of unipolar planar device with asymmetrical barrier profile: a planar barrier diode

2017-09-26 , Zarimawaty Zailan , Shahrir Rizal Kasjoo , Nor Farhani Zakaria , Muammar Mohamad Isa , Mohd Khairuddin Md Arshad , Sanna Taking

By introducing a funnel-shape semiconductor channel to create an asymmetrical energy barrier profile, a type of nonlinear device has been proposed and simulated which is referred as planar barrier diode (pbd). An applied voltage v across a pbd provides different height of the barrier depending on the sign of v. This results in a nonlinear current-voltage characteristic that resembles a typical diode behavior and therefore it can be used in signal rectification. The intrinsic cut-off frequency obtained in the simulation of the p-type silicon pbd rectifier was ∼15 ghz.

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Rectification performance of self-switching diode in various geometries using ATLAS simulator

2017-01-03 , Nor Farhani Zakaria , Shahrir Rizal Kasjoo , Zarimawaty Zailan , Muammar Mohamad Isa , Mohd Khairuddin Md Arshad , Sanna Taking

Characterization on a planar nano-device, known as self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation has been conducted on InGaAs-based SSD with 70 nm L-shaped channels using twodimensional (2D) ATLAS simulator. The current-voltage (I-V) characteristic of the device is found asymmetrical, similar to I-V behavior of a diode. The structure geometries of the channel are varied in term of channel length, channel width, and trenches width to observe the I-V behavior of the device. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the rectification performance of each configuration has been observed and concluded. The results obtained can assist the optimization in the design of the SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.

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Self-switching diodes as RF rectifiers: Evaluation methods and current progress

2019-06-01 , Zakaria N. , Shahrir Rizal Kasjoo , Isa M. , Zarimawaty Zailan , Arshad M. , Sanna Taking

In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.

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Dielectric and microstructural properties of BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics

2017 , Fatin Adila Ismail , Rozana Aina Maulat Osman , Mohd Sobri Idris , Sanna Taking , Zul Azhar Zahid Jamal

BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics were investigated regarding their dielectric and microstructure properties via conventional solid state reaction method. The phase pure samples were obtained when heated at 1400°C for overnight. The effect of Er3+ doped into BaTiO3 on dielectric properties and microstructural properties was investigated for composition of BaTiO3 and Ba0.9925Er0.0075TiO3. The analysis was made by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Impedance Analyzer. The XRD patterns of BaTiO3 and Ba0.9925Er0.0075TiO3 are phase pure and identical with tetragonal perovskite structure with space group of P4mm. The lattice parameters and unit cell volume of BaTiO3 increased by doping with Erbium as the crystallite size decreased. Measurements of dielectric properties were carried out as a function of temperature up to 200°C at different frequencies. Ba0.9925Er0.0075TiO3 exhibit the high value of dielectric constant (ε=6179) at Curie temperature (TC) of 120°C. SEM analysis of BaTiO3 and Ba0.9925Er0.0075TiO3 ceramics showed that the grain sizes of BaTiO3 and Ba0.9925Er0.0075TiO3 were ranged from 3.3µm-7.8µm and 2.2µm-4.7µm respectively.

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An overview of self-switching diode rectifiers using green materials

2017-09-26 , Shahrir Rizal Kasjoo , Zarimawaty Zailan , Nor Farhani Zakaria , Muammar Mohamad Isa , Syahrun Nizam Md Arshad @ Hashim , Sanna Taking

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of 'green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current 'green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

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TCAD simulation of AlGaN/GaN HEMT grown on high-resistivity silicon substrate

2024-02-08 , Sanna Taking , Ofiare A. , Ahmad N. , Musa A.Z. , Sendekisager K. , Isa M.M. , Shahrir Rizal Kasjoo , Wasige E.

This paper studies GaN device structure on silicon substrates. The fabricated device, with LG of 4-μm and WG of 100-μm, demonstrates a maximum drain current of 780mA/mm and a threshold voltage of - 4V. The two-dimensional Silvaco simulator tools are used to analyze and model the fabricated device. The simulation results closely match the experimental findings, validating the developed model's accuracy. These outcomes signify that the study can be a reference for modeling other GaN-based devices in future material growth and process development.

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Rectification performance of self-switching diodes in silicon substrate using device simulator

2017-01-03 , Zarimawaty Zailan , Shahrir Rizal Kasjoo , Nor Farhani Zakaria , Muammar Mohamad Isa , Mohd Khairuddin Md Arshad , Sanna Taking

A planar nanodevice, known as the self-switching diode (SSD) has been demonstrated to rectify electromagnetic signals at microwave and terahertz frequencies. This diode has a non-linear current-voltage (I-V) characteristic due to the structure of the device which consists of asymmetric nanochannel. To further explore the properties of SSD rectifiers, in this work, silicon-based SSDs with different dielectric materials that filled up the trenches of the devices were simulated using ATLAS device simulator under the temperature range of 250 K-500 K. The results showed that the rectification performance of the SSDs was deteriorated with increasing temperature for all dielectric materials which might be due to the thermal-activated electronic transport behavior of the devices.

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