Nurul Izza Mohd Nor
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Preferred name
Nurul Izza Mohd Nor
Official Name
Nurul Izza, Mohd Nor
Alternative Name
Nor, N. I.M.
Noor, N. I.Mohd
Mohd Nor, Nurul I.
Mohd Nor, Nurul Izza
Mohd Nor, N. Izza
Nor, Nurul Izza Mohd
Nor, N. Izza M.
Main Affiliation
Scopus Author ID
55229582100
Researcher ID
GPG-3116-2022

Research Output

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Remazol orange dye sensitized solar cell

2017-01-03 , Siti Salwa Mat Isa , Muhammad Mahyiddin Ramli , Nor Azura Malini Ahmad Hambali , Muda M.R. , Shahrir Rizal Kasjoo , Muammar Mohamad Isa , Nurul Izza Mohd Nor , Norhawati Ahmad , Nazuhusna Khalid , Nur M. Selamat , Nur Asyikin Mohd Anhar

Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device performance was tested using solar cell simulator. The results show that the performance was increased at higher dye concentration and longer immersion time. The best device performance was obtained at 0.2% for dye concentration of 2.5 mM immersed at 24 hours.

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The design and analysis of high Q factor film bulk acoustic wave resonator for filter in super high frequency

2021-12 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Nur Anira Asyikin Hashim , Shahrir Rizal Kasjoo , Zaliman Sauli , Lam Hok Lang , Chow Shi Qi

Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.

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Design and Simulation of Micro-Electro-Mechanical Systems (MEMS) Capacitive Pressure Sensor for Thermal Runaway Detection in the Electric Vehicle

2023-12-01 , M Hajizi H.M. , Aris H. , Wan Mokhdzani Wan Nor Haimi , Nurul Izza Mohd Nor , Zaliman Sauli , Aziz A.A.

Recent advancement of vehicle technologies has resulted in development of replacing conventional Internal combustion engine (ICE) to Electric Vehicle (EV) mostly powered by Lithium-ion batteries (LIB). These batteries contain massive amount of energy confined in a very small space. Thermal runaway occurs when the batteries and its circuits start to heat up anomaly. Thermal runaway can cause failures that can lead to battery ignition, resulting in explosions and imminent threats to life and property. This research focused on MEMS capacitance pressure sensor, using three distinct square slotted diaphragm designs: clamped-square, four-slotted-square, and eight-slotted-square diaphragms. The investigation commenced with an evaluation of diaphragm performance, and subsequently, the diaphragm was integrated into the structure of the MEMS capacitive pressure sensor and subjected to simulation. Varied pressure levels ranging from 0.1 to 0.35 MPa were applied to both the diaphragm and the pressure sensor. The outcomes revealed that the eight-slotted-square diaphragm yielded the most substantial displacement, registering at 5.507 µm. It also exhibited the highest Mises stress of 644.67 MPa, and recorded the highest mechanical sensitivity at 15.7545 (10-12/Pa). The clamped-square design, despite its slotted area, yielded the highest capacitance value among the three designs for the pressure sensor.

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Comprehensive study on gate recess step for the fabrication of high-speed InGaAs/InAlAs/InP pHEMT

2017-01-03 , Muammar Mohamad Isa , Norhawati Ahmad , Siti Salwa Mat Isa , Muhammad Mahyiddin Ramli , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Missous M.

We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of 'hump' structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed that the etch rate of bulk InGaAs is about 360 A/min and the percentage of dome height is consistent at approximately 25%. Meanwhile, the study on pHEMT epitaxial layer showed that the etching time of 3 minutes is sufficient in order to completely remove the cap layer. Gate leakage current of magnitude more than 10 times lower is observed on the devices that engaging Succinic Acid as the gate recess etching agent. The optimized processing steps will tailor for highly reproducible pHEMT fabrication process for high speed applications.

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Analysis on square and circular inductor for a high Q-factor inductor

2021-12 , Aimi Noorliyana Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.

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Analysis of different piezoelectric materials on the film bulk acoustic wave resonator

2023-12 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Hasnizah Aris , M. S. Mispan , N. Aiman Syahmi

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 μm × 25 μm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

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Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator

2023-12-01 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Hasnizah Aris , Mispan M.S. , Syahmi N.A.

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2 eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

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A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate

2022-12 , Nazuhusna Khalid , Aimi Noorliyana Hashim , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli , Mohd Norhafiz Hashim , M.S Mispan

A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.

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Analysis on Square and Circular Inductor for a High Q-Factor Inductor

2021-12-01 , Nur Anira Asyikin Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.

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Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications

2017-01-03 , Xian O.J. , Norhawati Ahmad , Muammar Mohamad Isa , Siti Salwa Mat Isa , Muhammad Mahyiddin Ramli , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Missous M.

HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could be perfectly used in the most of the high frequency application. In this project, small signal models of InGaAs/InAlAs/InP pHEMT with 7 extrinsic parameters and 8 intrinsic parameters are modelled.

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