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Zaliman Sauli
Preferred name
Zaliman Sauli
Official Name
Zaliman, Sauli
Alternative Name
Sauli, Zaliman B.
Sauli, Zaliman
Sauli, Z.
Main Affiliation
Scopus Author ID
24554644300
Researcher ID
FWC-2779-2022
Now showing
1 - 10 of 58
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PublicationLarge Sized Slug on Solid State Lighting Stress and Temperature Analysis( 2013)
;Vithyacharan Retnasamy ;Rajendaran Vairavan -
PublicationBreast surface variation phase map analysis with digital fringe projection( 2019)
;Wan Mokhzani Wan Norhaimi ;Mukhzeer Mohamad Shahimin ;MAM Azmi ;K Wong ;Vithyacharan Retnasamy ;Rajendaran Vairavan ;Christopher R. ValentaMasafumi Kimata -
PublicationThe influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.( 2021)
;G M Albalawneh ;M M Ramli ;M ZM ZainAbstractCu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples. -
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PublicationDetermination of drying kinetics and sorption isotherm of black pepper (Piper Nigrum)( 2017)
;Flordeliza C. De Vera ;Vanessa Bernadette B. Atienza ;Jomicah B. CapiliIn the present study of food products, determination of the drying characteristics of black pepper using an oven is not yet completely established. This study aimed to determine the drying kinetics and sorption isotherm of black pepper using a convective oven at 30°C, 40°C and 50°C. The data gathered in this study were used to fit in selected mathematical models for drying kinetics and sorption isotherm. Among these models, the Midilli model (MR=0.5338exp(0.7273t-0.0551)+-0.0005t for 30°C, MR=0.5814exp(0.6293t-0.0764)+ -0.0008t for 40°C and MR=0.3187exp(1.1777t-0.0466)+ -0.0011t for 50°C) was the best fit to explain the moisture transfer in black pepper, while the GAB Model (m/0.1302=((0.1906)( 0.7811)aw)/(1-(0.7811)aw)[1-(0.7811)aw+(0.1906)( 0.7811)aw])) was for the equilibrium moisture content and water activity relationship. After evaluating the data, the drying characteristics of black pepper at 40°C yielded better results than 30°C and 50°C. XLSTAT and ANOVA Add-in of Microsoft Excel was the software used to compute for the necessary values in the assessment of the mathematical models for this study. -
PublicationThermosonic vs thermocompression flip chip bonding for low cost system in package( 2018)
;M. R. Lim ;Hanizah Aris ;V. Retnasamy ;Edward W.C.L. ;K. Muniandy ;N. KhanC. S. Foong -
PublicationFrequency Dependent Electrical Properties of Ferroelectric Ba0.8Sr0.2TiO3 Thin Film( 1970)
;Ala’eddin A. SAIFThe frequency dependent electrical parameters, such as impedance, electric modulus, dielectric constant and AC conductivity for ferroelectric Ba0.8Sr0.2TiO3 thin film have been investigated within the range of 1 Hz and 106 Hz at room temperature. Z* plane shows two regions corresponding to the bulk mechanism and the distribution of the grain boundaries-electrodes process. M" versus frequency plot reveals a relaxation peak, which is not observed in the ε″ plot and it has been found that this peak is a non-Debye-type. The frequency dependent conductivity plot shows three regions of conduction processes, i. e., a low-frequency region due to DC conduction, a mid-frequency region due to translational hopping motions and a high-frequency region due to localized hopping and/or reorientational motion.http://dx.doi.org/10.5755/j01.ms.17.2.490 -
PublicationA review on harmonic mitigation method for non-linear load in electrical power system( 2021)
;Muhammad Mokhzaini Azizan -
PublicationInterrogation of surface roughness and bond force effect( 2013)In the macro world surface roughness is a feature undoubtedly not to be ignored. In the current trend towards the nano-scale feature in the devices related to the semiconductor and other various niche, surface roughness is being propelled as an important element. In this work the surface roughness at nano level is investigated for the adhesion interaction and influence. The samples for the roughness feature and ranges were prepared using controlled plasma etching. The wire bonding bond force parameter was chosen as the factor to be tested and shear test as the response. The shear value ranged from 13g to 22g for the low to high bond force respectively for the lower range surface roughness, for the higher surface roughness the value ranged 5g to 9g respectively. The interaction shows surface roughness has tangible effect on adhesion for a more thorough detailed investigation.
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PublicationDevelopment of copper busbar by silver plating under non-linear load operation using finite element method (FEM)( 2023)
;M. H. A. Aziz ;M. M. AzizanM. W. Yahya