Mohd Norhafiz Hashim
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Preferred name
Mohd Norhafiz Hashim
Official Name
Mohd Norhafiz , Hashim
Alternative Name
Hashim, M. N.
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Scopus Author ID
57213639477
Researcher ID
GDM-2811-2022

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  • Publication
    A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate
    ( 2022-12)
    Nazuhusna Khalid
    ;
    Aimi Noorliyana Hashim
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Mohd Norhafiz Hashim
    ;
    M.S Mispan
    A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.
      3  46
  • Publication
    A 12 GHz LC-VCO Implemented with S’ shape inductor using Silicon-on Sapphire Substrate
    (Universiti Malaysia Perlis, 2022-12-01)
    Khalid N.
    ;
    Nur Anira Asyikin Hashim
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Mohd Norhafiz Hashim
    ;
    Mispan M.S.
    A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage-Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on-Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was-131.33 dBc/Hz and-156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.
      4  49
  • Publication
    Fabrication of 110 Silicon Nanowire Oriented with Direct Band Gap
    ( 2020-12-18)
    Tijjani Adam
    ;
    Dhahi T.S.
    ;
    Khairul Affendi Rosli
    ;
    Jaafar M.
    ;
    Jaafar R.
    ;
    Mohd Fikri Che Husin
    ;
    Mohd Norhafiz Hashim
    ;
    Mohamad Rizal Abdul Rejab
    Today, the challenges of getting fast switching semiconductor device based device is the phonon generation mechanism for light-emitting by device such as diodes. The increase in efficiency of the device determine by the green light part of the emitted light spectrum. Silicon nanowire growth in the direction of 110 structure has indirect band gap, which tremendously improved the green emission efficiency at the lower Nano regime. Several band structure calculations have be predicted direct band for 110 growth silicon nanowire. Thus, the study report the fabrication of silicon nanowires with diameter between 20 to 50nm which demonstrate the direct nature of the band gap. A strong photoluminescence at wave spectrum of 597 nm with micro-second lifetime indicating it direct band gap. This study have demonstrated new nanostructure engineering based on silicon nanowire orientation which will allow new ways getting silicon nanowire functionality.
      7  22