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Mohammad Nuzaihan Md Nor
Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022
Now showing
1 - 10 of 30
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PublicationHigh-sensitivity room temperature p-doped and undoped GaN thin film resistive gas sensor( 2022-01-01)
;Hasnan M. ;Asri R.I.M. ;Hassan Z. ;Abdalmohammed S.A.A. ;Inaba M. ;Falina S.Syamsul M.The behaviour and performance of p-doped GaN and undoped GaN thin film in the presence of methanol gas were studied. GaN thin films were grown using metal organic chemical vapour deposition (MOCVD), which were then fabricated into resistive sensors. Gas-sensing characterisation with the in-house gas chamber demonstrates that the resistive sensors based on undoped and p-doped GaN exhibit high sensitivity and fast response to methanol vapour in less than a minute, as well as excellent stability in room temperature operations. Without high temperature measurements, both undoped and p-doped GaN resistive sensors exhibit significant resistance variation and response over time when exposed to methanol, albeit with distinct properties. Here we demonstrate the comparison between the two and their sensing capabilities of both p-doped GaN and undoped GaN thin film resistive sensors. -
PublicationFabrication and simulation of silicon nanowire pH sensor for Diabetes Mellitus detection( 2023-04)
;C. Y. Chean ;M. I. HashimRozaimah A.TDiabetes Mellitus (DM) is a disease failed to control the balance of blood sugar level due to lack of insulin thereby it effect human health. In Malaysia, there are around 3.9 millions people aged 18 years old and above have diabetes according to National Health and Morbidity Survey 2019. Silicon Nanowire is a nanostructure which has ultra-high sensitivity and non-radioactive that has potential given good performances when applied on pH sensor and biosensor. Silicon nanowire pH sensor and biosensor is an electronic sensor that investigated to improve the sensitivity and accuracy for detecting DM. This project consists of two parts, which are fabrication of silicon nanowire pH sensor and simulation of silicon nanowire biosensor as preliminary study. In fabrication, silicon nanowire of pH sensor is fabricated by conventional lithography process, reaction ion etching (RIE) and metallization to achieved the width of 100 nm silicon nanowire. The pH6, pH7, pH10 and DI water as analytes to analysis the current-voltage (I-V) characteristics of silicon nanowire pH sensor. In second part, the silicon nanowire biosensor as preliminary study is done simulation by Silvaco ATLAS devices simulator. The silicon nanowire with 30 nm in height and 20 nm in width of biosensor is designed and simulated to analyze the performance in terms of sensitivity. I-V characteristics of silicon nanowire biosensor according to different concentration of negative interface charge is determined. The negative interface charge represent as the Retinol Binding Protein 4 (RBP4) which is used to diagnose DM. The I-V characteristic based on the change in current, resistance and conductance to determine sensitivity. Lastly, the sensitivity of silicon nanowire pH sensor obtained 23.9 pS/pH while the sensitivity of simulated silicon nanowire biosensor obtained 3.91 nS/e.cm2. The results shown the more negative charge of concentration analyte attached on surface silicon nanowire has been accumulated more current flow from drain terminal to source terminal. It leads to the resistance becomes highest and obtained good sensitivity. In summary, the silicon nanowire pH sensor exhibited good performance and high sensitivity in detection pH level. The simulated silicon nanowire biosensor is capable of detecting biomolecular interactions charges to obtained high sensitive and accuracy result. -
PublicationSilicon nanowire biosensors for diabetes mellitus monitoring( 2024-10)
;M. Shaifullah A. S ;J. Jumat ;J. N. Ismail ;M. SyamsulRozaimah A. TThe main goal of this research is the development of a label-free biosensor for the detection of diabetes mellitus (DM) using the target molecule retinol-binding protein 4 (RBP4). The enzyme-linked immunosorbent assay (ELISA) approach, currently used to detect DM, is time-consuming and difficult. As a result, label-free biosensors are being considered as an alternative. In this research, silicon nanowires (SiNWs) were selected as the transducer for this biosensor due to their low cost, real-time analysis capability, high sensitivity, and low detection limit. The SiNWs were created using conventional lithography, reactive ion etching (RIE), and physical vapor deposition (PVD), and then dripped with a gold nanoparticle solution to create gold-decorated SiNWs. The surface of the gold-decorated SiNWs was functionalized using 3-aminothiophenol and glutaraldehyde solutions before being immobilized with DM RBP4 antibodies and targets. The electrical characterization of the gold nanoparticle decorated SiNWs biosensor revealed good performance in DM detection. The pH tests confirmed that the SiNWs acted as a transducer, with current proportional to the DM RBP4 concentration. The estimated limit of detection (LOD) and sensitivity for detecting DM RBP4 binding were 0.076 fg/mL and 8.92 nA(g/mL)-1, respectively. This gold nanoparticle decorated SiNWs biosensor performed better than other methods and enabled efficient, accurate, and direct detection of DM. The SiNWs could be used as a distinctive electrical protein biosensor for biological diagnostic purposes. In conclusion, gold nanoparticle deposition offers effective label-free, direct, and high-accuracy DM detection, outperforming previous approaches. Thus, these SiNWs serve as novel electrical protein biosensors for future biological diagnostic applications. -
PublicationNumerical Simulation on the Impact of Back Gate Voltage in Thin Body and Thin Buried Oxide of Silicon on Insulator (SOI) MOSFETs( 2023-10-01)
;Koay K.Y.Silicon-on-Insulator (SOI) technology provides a solution for controlling Short-Channel Effects (SCEs) and enhancing the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, scaling down SOI MOSFETs to a nanometer scale does not necessarily yield further scaling benefits. Introducing multiple gates, such as a double gate configuration, can effectively mitigate SCEs. Nonetheless, fabricating a flawless double gate structure is an exceedingly challenging endeavor that remains unrealized. The adoption of a back gate bias, with an asymmetrical thickness arrangement between the front and back gates, mimicking the behavior of a double gate, offers an alternative approach. This approach has the potential to modify the electrical characteristics of the device, thus potentially leading to improved control over SCEs. In this study, we employed 2D simulations using Atlas to investigate the influence of back gate biases, namely,-2.0 V, 0 V, and 2.0 V on a 10 nm silicon thickness at the top and a 20 nm buried oxide thickness for n-channel MOSFETs. We focused on key parameters, including threshold voltage (VTh), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS). The results demonstrate that a negative back gate bias is the most favorable configuration, as it yields superior performance. This translates into more effectively controlled SCEs across all the parameters of interest. -
PublicationThe impact of silicon nanowire transducer channel width on field-effect transistor biosensor performance( 2021-05-03)
;Abdullah R.F. ;Ong C.C. ;Tamjis N.Ghazali M.H.M.This paper reported on performance assessment of a field-effect transistor-based biosensor with different widths of the silicon nanowire transducer channel. Silvaco ATLAS device simulation software was used to model the device design with three different channel widths, which are 100, 150, and 200 nm. In this simulation, the bounded target biomolecules during actual detection using the biosensor were represented by several negative interface charge density values applied on the surface of the transducer channel. Increase in accumulation of hole carriers beneath the channel's surface was observed due to the availability of negative interface charges on the surface, hence increased the output drain current. Furthermore, width reduction of the device's channel had allowed more significant change in drain current due to application of different interface charge density values and increased the device's sensitivity. Among the simulated devices, silicon nanowire field-effect transistor-based biosensor with transducer channel width of 100 nm had shown highest sensitivity (-56.45 nA/e.cm2) with lowest interface charge density detection (2.79u1010 e/cm-2), which means it enhances the interface charge detection by providing better response and allows lower limit of detection. Therefore, in actual detection, possibility for reaction of the transducer channel to the specific target biomolecule can be increased.1 -
PublicationNumerical simulation on the impact of back gate voltage in thin body and thin buried oxide of silicon on insulator (SOI) MOSFETs( 2023-10)
;K.Y KoaySilicon-on-Insulator (SOI) technology provides a solution for controlling Short-Channel Effects (SCEs) and enhancing the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, scaling down SOI MOSFETs to a nanometer scale does not necessarily yield further scaling benefits. Introducing multiple gates, such as a double gate configuration, can effectively mitigate SCEs. Nonetheless, fabricating a flawless double gate structure is an exceedingly challenging endeavor that remains unrealized. The adoption of a back gate bias, with an asymmetrical thickness arrangement between the front and back gates, mimicking the behavior of a double gate, offers an alternative approach. This approach has the potential to modify the electrical characteristics of the device, thus potentially leading to improved control over SCEs. In this study, we employed 2D simulations using Atlas to investigate the influence of back gate biases, namely, -2.0 V, 0 V, and 2.0 V on a 10 nm silicon thickness at the top and a 20 nm buried oxide thickness for n-channel MOSFETs. We focused on key parameters, including threshold voltage (VTh), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS). The results demonstrate that a negative back gate bias is the most favorable configuration, as it yields superior performance. This translates into more effectively controlled SCEs across all the parameters of interest.1 7 -
PublicationNanoparticle-based biosensors for detection of heavy metal ions( 2023-10)
;Y. J. Beh ;S. B. Chia ;C. H. Ng ;C. C OngHeavy metal pollution is one of the most serious environmental problems in the world. Many efforts have been made to develop biosensors for monitoring heavy metals in the environment. Development of nanoparticle-based biosensors is the most effective way to solve this problem. This review presents the latest technology of nanoparticle-based biosensors for environment monitoring to detect heavy metal ions, which are magnetic chitosan biosensor, colorimetric biosensor, and electrochemical biosensor. Magnetic chitosan biosensor acts as a nano-absorbent, which can easily detect and extract poisonous heavy metal ions such as lead ions and copper ions. There are several methods to prepare the chitosan based on the nanoparticle, which are cross-linking, co-precipitation, multi-cyanoguanidine, and covalent binding method. In colorimetric biosensor, gold and silver nanoparticles are commonly used to detect the lead and mercury ions. In addition, this biosensor is very sensitive, fast and selective to detect metal ions based on the color change of the solution mixture. Meanwhile, electrochemical biosensor is widely used to detect heavy metal ions due to a simple and rapid process, easy, convenient and inexpensive. This biosensor is focused on the surface area, which leads to significant improvement in the performance of devices in terms of sensitivity. The wide surface area can affect the performance of the biosensor due to a limited space for operation of electrode. Therefore, reduced graphene oxide is a suitable material for making the electrochemical biosensor due to a wide surface area, good conductivity and high mechanical strength. In conclusion, these three technologies have their own advantages in making a very useful biosensor in the detection of heavy metal ions.1 9 -
PublicationMolybdenum disulfide—gold nanoparticle nanocomposite in field-effect transistor back-gate for enhanced C-reactive protein detection( 2020-11-01)
;Dalila N.R.Nanofabricated gold nanoparticles (Au-NPs) on MoS2 nanosheets (Au-NPs/MoS2) in back-gated field-effect transistor (BG-FET) are presented, which acts as an efficient semiconductor device for detecting a low concentration of C-reactive protein (C-RP). The decorated nanomaterials lead to an enhanced electron conduction layer on a 100-μm-sized transducing channel. The sensing surface was characterized by Raman spectroscopy, ultraviolet–visible spectroscopy (UV-Vis), atomic force microscopy (AFM), scanning electron microscopy (SEM), and high-power microscopy (HPM). The BG-FET device exhibits an excellent limit of detection of 8.38 fg/mL and a sensitivity of 176 nA/g·mL−1. The current study with Au-NPs/MoS2 BG-FET displays a new potential biosensing technology; especially for integration into complementary metal oxide (CMOS) technology for hand-held future device application. [Figure not available: see fulltext.] -
PublicationElectrical Properties of GaN Cap Layer for AlGaN/GaN HEMT( 2023-01-01)
;Hamid M.H.A. ;Asri R.I.M. ;Inaba M. ;Hassan Z. ;Kawarada H. ;Falina S.Syamsul M.Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution Xray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2. -
PublicationGold-nanoparticle associated deep eutectic solution mediates early bio detection of ovarian cancer( 2025-01)
;S. Uvambighai Devi ;N. Fareezah Jaapar ;F. Syakirah HalimGold nanoparticles (AuNPs) have indeed been extensively researched in biological and photothermal therapy applications in recent years. This study aims to enhance the sensitivity of biosensors for early detection of ovarian cancer biomarkers by investigating the efficacy of DES-mediated surface functionalization of AuNPs. Additionally, the impact of DES on the stability and dispersion of AuNPs on SiO2 support is assessed to optimize sensor performance. A simple DES-mediated synthesis method for efficient amine surface functionalization of silicon dioxide (SiO2) to incorporate tiny AuNPs for antibody biosensors. Physical characterization [Scanning Electron Microscope (SEM), Ultraviolet-Visible Spectrophotometer (UV-Vis), Fourier Transform Infrared Spectroscopy (FTIR), and 3D Profiler] and electrical characterization (Keithley) have been done to determine the functionalization of the modified IDE surface. SEM analysis indicated the resultant nanoparticles have truncated spherical shapes. There is just a peak recorded by UV-Vis at 504-540 nm with AuNPs due to the formation of monodispersed AuNPs. When the conjugation of DES with samples is measured, the curves are identical in form, and the highest peak after conjugation has remained at 230 nm but the SPR absorption peak becomes narrower and moves toward greater wavelengths, indicating the conjugation between the molecules. Furthermore, when the DES is conjugated with AuNPs, 3-Aminopropyltriethoxysilane (APTES), antibody, and protein, the peaks gradually increased and became narrower, where O-H at 3280 cm-1, C-H at 2809 cm-1 and 2933 cm-1, CH2 at 1448 cm-1, CH3 at 1268 cm-1, C-OH at 1048 cm-1 and 1110 cm-1 and C-N+ at 844 cm-1 as analyzed by FTIR. Moreover, it can be observed that the 3D profilometer revealed a few red-colored areas, which are the portion that protrudes from the IDE surface. Based on the findings, it is possible to infer that this immunosensor does have the prospective to be used in clinical investigations for the precise detection of ovarian cancer or other biomarkers. The capacitance, transmittance, and resistivity profiles of the biosensor clearly distinguished between the antibody immobilization and the affinity binding. The presence of a DES-mediated synthetic approach increased the possibility of supporting different metal nanoparticles on SiO2 as the potential platform for biosensor applications.