Ga1-xInxP composition has been applied to the top cell of multi-junction GaInP/GaAs based solar cell and currently have achieving a conversion efficiency of more than 46%, however its capability is unclear. We performed an analysis using Silvaco simulation method to evaluate the effect of In and the substitution was made to the Ga1-xInxP for the range of x from 0 to 1. We found that the highest efficiency recorded was 17.66% when the composition of Indium was x=1. The efficiency has been increasing about 11.71% from x=0 to x=1 In content. As the composition of In raised, the value of efficiency and short circuit current density, Jsc also become higher (13.60 mA/cm2) by having a greater photon absorption in a wider band gap energy. In addition to that, Voc, Pmax, Vmax, Imax and fill factor was measured to be 2.15 V, 2.44 mW/cm2, 2.0 V, 1.22 mA/cm2 and 83.34 respectively. In conclusion, this study confirms that the existence of In in Ga1-xInxP improves the solar cell efficiency by gaining a higher energy gap and producing more electrons for best achievement in multilayer solar cell applications.
