Zaliman Sauli
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Preferred name
Zaliman Sauli
Official Name
Zaliman, Sauli
Alternative Name
Sauli, Zaliman B.
Sauli, Zaliman
Sauli, Z.
Main Affiliation
Scopus Author ID
24554644300
Researcher ID
FWC-2779-2022

Research Output

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  • Publication
    Analysis on square and circular inductor for a high Q-factor inductor
    ( 2021-12)
    Aimi Noorliyana Hashim
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.
  • Publication
    A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate
    ( 2022-12)
    Nazuhusna Khalid
    ;
    Aimi Noorliyana Hashim
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Mohd Norhafiz Hashim
    ;
    M.S Mispan
    A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.
  • Publication
    The design and analysis of high Q factor film bulk acoustic wave resonator for filter in super high frequency
    ( 2021-12)
    Nurul Izza Mohd Nor
    ;
    Nazuhusna Khalid
    ;
    Nur Anira Asyikin Hashim
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Lam Hok Lang
    ;
    Chow Shi Qi
    Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.
  • Publication
    Design and analysis of wideband ladder-type film bulk acoustic wave resonator filters in Ku-Band
    ( 2013-06)
    Nurul Izza Mohd Nor
    ;
    Kriang Shah
    ;
    Jugdutt Singh
    ;
    Zaliman Sauli
    This paper presents the design of ladder-type filters based on film bulk acoustic wave resonator (FBAR) in Ku-band. The proposed FBAR filter has an insertion loss of −3 dB, out-of-band rejection of −12 dB and 3 dB bandwidth of 1.0 GHz from 15 GHz to 16 GHz. Based on the characteristics of the FBAR filter, the expected characteristics of FBAR resonators are determined by using the 1D numerical analysis. This design proves that it is possible to design a wide-bandwidth FBAR filter in Ku-band.
      4  17
  • Publication
    Design and simulation of micro-electro-mechanical systems (MEMS) capacitive pressure sensor for thermal runaway detection in the electric vehicle
    ( 2023-12)
    H. M. M Hajizi
    ;
    Hasnizah Aris
    ;
    Wan Mokhdzani Wan Nor Haimi
    ;
    Nurul Izza Mohd Nor
    ;
    Zaliman Sauli
    ;
    A. A. Aziz
    Recent advancement of vehicle technologies has resulted in development of replacing conventional Internal combustion engine (ICE) to Electric Vehicle (EV) mostly powered by Lithium-ion batteries (LIB). These batteries contain massive amount of energy confined in a very small space. Thermal runaway occurs when the batteries and its circuits start to heat up anomaly. Thermal runaway can cause failures that can lead to battery ignition, resulting in explosions and imminent threats to life and property. This research focused on MEMS capacitance pressure sensor, using three distinct square slotted diaphragm designs: clamped-square, four-slotted-square, and eight-slotted-square diaphragms. The investigation commenced with an evaluation of diaphragm performance, and subsequently, the diaphragm was integrated into the structure of the MEMS capacitive pressure sensor and subjected to simulation. Varied pressure levels ranging from 0.1 to 0.35 MPa were applied to both the diaphragm and the pressure sensor. The outcomes revealed that the eight-slotted-square diaphragm yielded the most substantial displacement, registering at 5.507 μm. It also exhibited the highest Mises stress of 644.67 MPa, and recorded the highest mechanical sensitivity at 15.7545 (10-12/Pa). The clamped-square design, despite its slotted area, yielded the highest capacitance value among the three designs for the pressure sensor.
      2  3
  • Publication
    The Design and Analysis of High Q Factor Film Bulk Acoustic Wave Resonator for Filter in Super High Frequency
    ( 2021-12-01)
    Nurul Izza Mohd Nor
    ;
    Nazuhusna Khalid
    ;
    Nur Anira Asyikin Hashim
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Lam Hok Lang
    ;
    Chow Shi Qi
    Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.
      2
  • Publication
    Design and Simulation of Micro-Electro-Mechanical Systems (MEMS) Capacitive Pressure Sensor for Thermal Runaway Detection in the Electric Vehicle
    ( 2023-12-01)
    M Hajizi H.M.
    ;
    Aris H.
    ;
    Wan Mokhdzani Wan Nor Haimi
    ;
    Nurul Izza Mohd Nor
    ;
    Zaliman Sauli
    ;
    Aziz A.A.
    Recent advancement of vehicle technologies has resulted in development of replacing conventional Internal combustion engine (ICE) to Electric Vehicle (EV) mostly powered by Lithium-ion batteries (LIB). These batteries contain massive amount of energy confined in a very small space. Thermal runaway occurs when the batteries and its circuits start to heat up anomaly. Thermal runaway can cause failures that can lead to battery ignition, resulting in explosions and imminent threats to life and property. This research focused on MEMS capacitance pressure sensor, using three distinct square slotted diaphragm designs: clamped-square, four-slotted-square, and eight-slotted-square diaphragms. The investigation commenced with an evaluation of diaphragm performance, and subsequently, the diaphragm was integrated into the structure of the MEMS capacitive pressure sensor and subjected to simulation. Varied pressure levels ranging from 0.1 to 0.35 MPa were applied to both the diaphragm and the pressure sensor. The outcomes revealed that the eight-slotted-square diaphragm yielded the most substantial displacement, registering at 5.507 µm. It also exhibited the highest Mises stress of 644.67 MPa, and recorded the highest mechanical sensitivity at 15.7545 (10-12/Pa). The clamped-square design, despite its slotted area, yielded the highest capacitance value among the three designs for the pressure sensor.
      1
  • Publication
    Analysis on Square and Circular Inductor for a High Q-Factor Inductor
    ( 2021-12-01)
    Nur Anira Asyikin Hashim
    ;
    Nazuhusna Khalid
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.
      3
  • Publication
    A 12 GHz LC-VCO Implemented with S’ shape inductor using Silicon-on Sapphire Substrate
    (Universiti Malaysia Perlis, 2022-12-01)
    Khalid N.
    ;
    Nur Anira Asyikin Hashim
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Mohd Norhafiz Hashim
    ;
    Mispan M.S.
    A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage-Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on-Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was-131.33 dBc/Hz and-156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.
      3