Shamsul Amir Abdul Rais
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Preferred name
Shamsul Amir Abdul Rais
Official Name
Shamsul Amir, Abdul Rais
Alternative Name
Rais, S. A.Abdul
Rais, S. A.A.
Rais, Shamsul Amir Abdul
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Scopus Author ID
54783286700

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  • Publication
    A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device
    ( 2023-12-01)
    Sha’ari N.Z.A.A.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Ahmad M.F.
    ;
    Mohd Natashah Norizan
    ;
    Ili Salwani Mohamad
    ;
    Mohd Fairus Ahmad
    ;
    Shamsul Amir Abdul Rais
    ;
    Banu Poobalan
    ;
    Norhayati Sabani
    The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which offers improved efficiency and reduced energy consumption. Optimization in terms of the variation in the interface charges, metal work function, and doping concentration values has been performed by means of a 2D TCAD device simulator. The results showed that the SSD can block up to 600 V of voltage with an optimum interface charge value of 1013 cm-2, making them suitable for higher voltage applications. Furthermore, it also found that the work function of the metal contact affected the forward voltage value, impacting the current flow in the device. Variation in doping concentrations also resulted in higher breakdown voltages and significantly increased forward current, leading to an increased power rating of 27 kW. In conclusion, the usage of 4H-SiC-based SSDs shows a usable potential for high-voltage applications with optimized parameters. The results from this research can facilitate the implementation of SSD in the development of high-power semiconductor devices for various industrial applications.
  • Publication
    A simple sensor network designed as anti-theft alarm system for copper cables
    ( 2021-05-03)
    Zainol M.Z.
    ;
    Mohd Natashah Norizan
    ;
    Ili Salwani Mohamad
    ;
    Ahmad M.F.
    ;
    Shamsul Amir Abdul Rais
    At present, the copper resources supply is very demanding, with society develops quickly. The increment of copper cable theft is due to the interest of its characteristic of low transmission voltage, dispersed layout, and high Cu in the material composition. The public utilities such as telecommunication providers faced plenty of troubles and dangers as they are the primary target. As a result of cable theft, the consumers cannot use the telephony system or internet services at their premises. These affect the communication between families, clients, and business purposes, including for emergency cases. Therefore, to prevent cable theft widespread, this work creates a device that is capable of alarming the responsible party when the copper at a specified location has been cut-off or tempered by thieves. A prototype has been developed for this work. Upon detection of a cable cut occurrence, this system will automatically activate the alarm and provide a display to indicate the specific location of where the cable was cut off. The system is controlled by an MCU unit (PIC16F877A). This work is using cable feeders in which the arrangement of the resistor in parallel determines the distance of the cable is terminated with the aid of the voltage divider concept.
  • Publication
    A study on electrical performance of SiC-based self-switching diode (SSD) as a high voltage high power device
    ( 2023-12)
    N. Z. A. A. Sha’ari
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Mohd Natashah Norizan
    ;
    Ili Salwani Mohamad
    ;
    Mohd Fairus Ahmad
    ;
    Shamsul Amir Abdul Rais
    ;
    Banu Poobalan
    ;
    Norhayati Sabani
    ;
    A. F. A. Rahim
    The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which offers improved efficiency and reduced energy consumption. Optimization in terms of the variation in the interface charges, metal work function, and doping concentration values has been performed by means of a 2D TCAD device simulator. The results showed that the SSD can block up to 600 V of voltage with an optimum interface charge value of 1013 cm-2, making them suitable for higher voltage applications. Furthermore, it also found that the work function of the metal contact affected the forward voltage value, impacting the current flow in the device. Variation in doping concentrations also resulted in higher breakdown voltages and significantly increased forward current, leading to an increased power rating of 27 kW. In conclusion, the usage of 4H-SiC-based SSDs shows a usable potential for high-voltage applications with optimized parameters. The results from this research can facilitate the implementation of SSD in the development of high-power semiconductor devices for various industrial applications.