Shahrir Rizal Kasjoo
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Preferred name
Shahrir Rizal Kasjoo
Official Name
Shahrir Rizal, Kasjoo
Alternative Name
Kasjoo, S.
Kasjoo, Shahrir R.
Kasjoo, S. R.
Shah K.
Main Affiliation
Scopus Author ID
36809748400
Researcher ID
ABI-6061-2020

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Remazol orange dye sensitized solar cell

2017-01-03 , Siti Salwa Mat Isa , Muhammad Mahyiddin Ramli , Nor Azura Malini Ahmad Hambali , Muda M.R. , Shahrir Rizal Kasjoo , Muammar Mohamad Isa , Nurul Izza Mohd Nor , Norhawati Ahmad , Nazuhusna Khalid , Nur M. Selamat , Nur Asyikin Mohd Anhar

Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device performance was tested using solar cell simulator. The results show that the performance was increased at higher dye concentration and longer immersion time. The best device performance was obtained at 0.2% for dye concentration of 2.5 mM immersed at 24 hours.

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Noise Properties of Unipolar Nanodiodes at Elevated Temperatures

2021-12-01 , Shahrir Rizal Kasjoo , Singh A.K. , Balocco C. , Song A.

A unipolar nanodiode known as the self-switching diode has been demonstrated as a room-temperature terahertz detector, with its noise-equivalent-power value comparable to those of the state-of-the-art Schottky diodes. Here, we study its performance at elevated temperatures and show an unusual reduction in low-frequency noise, which may be useful for practical applications. The experiments suggest that the increased thermionic emissions result in the reduced device resistance and hence the lowered noise. The observed noise behavior appears to be in good agreement with Hooge’s mobility fluctuation theory.

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Numerical Simulation and Parameters Variation of Silicon Based Self-Switching Diode (SSD) and the Effect to the Physical and Electrical Properties

2020-12-14 , Tan Y.L. , Zakaria N.F. , Shahrir Rizal Kasjoo , Safizan Shaari , Muammar Mohamad Isa , Mohd Khairuddin Md Arshad , Rahim A.F.A.

Investigation of SOI based self-switching diode (SSD) by numerical simulation for RF -DC harvesting application is presented. The rectification performance of the SSD is based on the curvature coefficient, ? and current responsivity, ß which are closely related to the I-V characteristic of a non-linear device. In this work, the structural parameters are varied to observe the electrical and physical characteristics with the aid of ATLAS Silvaco simulation tools. The rectification performance in each variation is then compared, with the highest value of ? and ß observed at 25.20 V and 12.60 V, respectively. By identifying and understanding these control factors and their effects, distinctive variations of the structural parameters by using a more deliberate optimization method can be proposed for further improvement on the rectification performance.

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Noise properties of unipolar nanodiodes at elevated temperatures

2021-12 , Shahrir Rizal Kasjoo , Arun K. Singh , Claudio Balocco , Aimin Song

A unipolar nanodiode known as the self-switching diode has been demonstrated as a room-temperature terahertz detector, with its noise-equivalent-power value comparable to those of the state-of-the-art Schottky diodes. Here, we study its performance at elevated temperatures and show an unusual reduction in low-frequency noise, which may be useful for practical applications. The experiments suggest that the increased thermionic emissions result in the reduced device resistance and hence the lowered noise. The observed noise behavior appears to be in good agreement with Hooge’s mobility fluctuation theory.

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Application of Taguchi method in optimization of structural parameters in self-switching diode to improve the rectification performance

2020-01-08 , Nor Farhani Zakaria , Shahrir Rizal Kasjoo , Muammar Mohamad Isa , Zarimawaty Zailan , Mokhar M.B.M. , Juhari N.

This paper presents the use of Taguchi method in the optimization process of a Self-switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for rectification. The rectification performance is mainly contributed by a parameter known as curvature coefficient, γ which is derived from the current-voltage (I-V) behavior of the device and can be altered by varying the device's geometrical structure. The parameters involved are the channel length, channel width and trenches width of the device, and the rectification performance are observed based on the peak of γand its corresponding bias voltage. Using Taguchi method for design of experiment (DOE), effects on the interaction among these parameters are investigated by employing the orthogonal array and evaluation of the signal-to-noise (S/N) ratio both in the peak of γand its corresponding bias voltage. The proposed parameters using this method showed γ peak of 32 V-1 and 30 V-1 at DC bias of 30 mV and zero-bias, respectively.

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A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device

2023-12-01 , Sha’ari N.Z.A.A. , Nor Farhani Zakaria , Shahrir Rizal Kasjoo , Ahmad M.F. , Mohd Natashah Norizan , Ili Salwani Mohamad , Mohd Fairus Ahmad , Shamsul Amir Abdul Rais , Banu Poobalan , Norhayati Sabani

The Self-switching Diodes (SSDs) have been primarily researched and used in low-power device applications for RF detection and harvesting applications. In this paper, we explore the potential of SSDs in high-voltage applications with the usage of Silicon Carbide (SiC) as substrate materials which offers improved efficiency and reduced energy consumption. Optimization in terms of the variation in the interface charges, metal work function, and doping concentration values has been performed by means of a 2D TCAD device simulator. The results showed that the SSD can block up to 600 V of voltage with an optimum interface charge value of 1013 cm-2, making them suitable for higher voltage applications. Furthermore, it also found that the work function of the metal contact affected the forward voltage value, impacting the current flow in the device. Variation in doping concentrations also resulted in higher breakdown voltages and significantly increased forward current, leading to an increased power rating of 27 kW. In conclusion, the usage of 4H-SiC-based SSDs shows a usable potential for high-voltage applications with optimized parameters. The results from this research can facilitate the implementation of SSD in the development of high-power semiconductor devices for various industrial applications.

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Simulation and characterization of an inverter logic gate by utilizing InGaAs-based planar devices

2023-12 , Faradilla Aziz , Shahrir Rizal Kasjoo , Nor Farhani Zakaria , Fauzi Packeer , A. K. Singh

Electronic circuits known as logic gates can perform basic logical operations like inverters, AND, and OR gates. These logic gates serve as the basis for digital electronics, and they are a common component in various electronic devices, such as computers, smartphones, and other types of digital systems. This research presents an inverter logic gate made of planar devices, which have significantly simpler structures than multi-layered transistors and diodes, namely the self-switching diode (SSD) and side-gated transistor (SGT). The inverter logic gate is realized by simply connecting both SSD and SGT in parallel. The electrical characteristics and performances of the inverter logic gate are assessed based on InGaAs material using SILVACO Inc.'s ATLAS device simulator software. The simulation results show that the functionality of the proposed planar inverter is comparable to that of a conventional inverter logic gate based on the standard truth table of the device. This has demonstrated the feasibility of building logic gates using a combination of SSDs and SGTs. In addition, the planar structure of SSD and SGT allows for a relatively low-cost device fabrication process as well as offering a high-frequency operation due to low parasitic elements in the devices.

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MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers

2024-01-01 , Garg S. , Sharma B. , Khanal G.M. , Kumar S. , Neena Gupta , Shahrir Rizal Kasjoo , Song A. , Singh A.K.

This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.

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An overview of semiconductor rectifier operating in the millimeter wave and terahertz region

2020-01-08 , Mohd Mokhar, Mohd Bazli , Shahrir Rizal Kasjoo , Nurjuliana Juhari , Nor Farhani Zakaria

An imaging system operated at millimeter (MM) waves and terahertz (THz) frequencies can be used in many applications such as safety monitoring, public security, medical, healthcare and manufacturing. Typically, these systems utilize rectifying antenna (rectenna) to convert electromagnetic radiation into usable DC power which will be used to generate images. One of the main components of rectenna is the rectifier. Hence, this paper explores the current review on several semiconductor rectifiers that have been significantly deployed for MM-wave/THz imaging systems. This includes Schottky diodes, metal-insulator-metal (MIM) diodes, self-switching diodes (SSDs) and ballistic rectifiers (BRs). The rectifying performance of these devices are discussed in terms of their voltage responsivity and noise-equivalent power (NEP). The standard fabrication process of each device is also presented in this paper as well as their recent development and achievement as high-frequency rectifiers for MM-wave/THz imaging systems.

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A brief overview of detectors used for terahertz imaging systems

2020-01-08 , Shahrir Rizal Kasjoo , Mohd Mokhar, Mohd Bazli , Nor Farhani Zakaria , Nurjuliana Juhari

This paper presents a short review on terahertz imaging systems based on several types of technology used in the terahertz detection schemes. Some commercial products from ThruVision Systems Limited Company have utilized GaAs Schottky diode detector at 0.25 THz to produce passive terahertz images for public and homeland security. On the other hand, TeraSense Group Incorporated Company has developed and invented a ground-breaking technology which employs sensor consisting of a matrix of plasmonic semiconductor detectors in their latest products to generate terahertz images in the 0.1 - 1.0 THz frequency range. Recently, the utilization of two-terminal unipolar nanodiodes, known as the self-switching diodes (SSDs), as terahertz detectors has shown promising results. The planar structure of SSD not only enables the device to operate at high frequencies due to low intrinsic parasitic capacitance, but also allows the realization of the device using only a single lithography step. This makes the fabrication process of SSDs faster, more simple, and at lower cost when compared to other electronic devices such as Schottky diodes. The development and recent achievement of SSDs as terahertz detectors are also presented in this paper.

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