Home
  • English
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Latviešu
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Log In
    New user? Click here to register. Have you forgotten your password?
Home
  • Browse Our Collections
  • Publications
  • Researchers
  • Research Data
  • Institutions
  • Statistics
    • English
    • Čeština
    • Deutsch
    • Español
    • Français
    • Gàidhlig
    • Latviešu
    • Magyar
    • Nederlands
    • Português
    • Português do Brasil
    • Suomi
    • Log In
      New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Resources
  3. UniMAP Index Publications
  4. Publications 2024
  5. MoS<inf>2</inf> Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers
 
Options

MoS<inf>2</inf> Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers

Journal
IEEE Transactions on Nanotechnology
ISSN
1536125X
Date Issued
2024-01-01
Author(s)
Garg S.
Punjab Engineering College, India
Sharma B.
Punjab Engineering College, India
Khanal G.M.
Punjab Engineering College, India
Kumar S.
Punjab Engineering College, India
Neena Gupta
Punjab Engineering College, India
Shahrir Rizal Kasjoo
Universiti Malaysia Perlis
Song A.
University of Manchester, United Kingdom
Singh A.K.
Punjab Engineering College, India
DOI
10.1109/TNANO.2023.3348129
Handle (URI)
https://xplorestaging.ieee.org/document/10376311
https://xplorestaging.ieee.org/Xplore/home.jsp
Abstract
This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.
Funding(s)
Department of Science and Technology, Ministry of Science and Technology, India
Subjects
  • Bridge rectifier (BR)...

  • Low power

  • Ripple factor (RF)

  • Self-switching diode ...

  • Single-phase (1P)

  • Three-phase (3P)

  • Total harmonic distor...

File(s)
MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers.pdf (150.98 KB)
Views
5
Acquisition Date
Jan 13, 2026
View Details
Downloads
19
Last Month
7
Acquisition Date
Jan 13, 2026
View Details
google-scholar
  • About Us
  • Contact Us
  • Policies