Simulation of unipolar planar device with asymmetrical barrier profile: a planar barrier diode
ISSN
0094243X
Date Issued
2017-09-26
Author(s)
DOI
10.1063/1.5002433
Handle (URI)
Abstract
By introducing a funnel-shape semiconductor channel to create an asymmetrical energy barrier profile, a type of nonlinear device has been proposed and simulated which is referred as planar barrier diode (pbd). An applied voltage v across a pbd provides different height of the barrier depending on the sign of v. This results in a nonlinear current-voltage characteristic that resembles a typical diode behavior and therefore it can be used in signal rectification. The intrinsic cut-off frequency obtained in the simulation of the p-type silicon pbd rectifier was ∼15 ghz.
Funding(s)
Ministry of Higher Education Malaysia
File(s)