Rectification performance of self-switching diodes in silicon substrate using device simulator
Date Issued
2017-01-03
Author(s)
DOI
10.1109/ICED.2016.7804671
Handle (URI)
Abstract
A planar nanodevice, known as the self-switching diode (SSD) has been demonstrated to rectify electromagnetic signals at microwave and terahertz frequencies. This diode has a non-linear current-voltage (I-V) characteristic due to the structure of the device which consists of asymmetric nanochannel. To further explore the properties of SSD rectifiers, in this work, silicon-based SSDs with different dielectric materials that filled up the trenches of the devices were simulated using ATLAS device simulator under the temperature range of 250 K-500 K. The results showed that the rectification performance of the SSDs was deteriorated with increasing temperature for all dielectric materials which might be due to the thermal-activated electronic transport behavior of the devices.
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