Sanna Taking
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Preferred name
Sanna Taking
Official Name
Sanna, Taking
Alternative Name
Taking, Sanna
Taking, S.
Main Affiliation
Scopus Author ID
35559852900
Researcher ID
I-7284-2015

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  • Publication
    Non-linear analysis of Self-Switching Diodes as microwave rectifiers
    ( 2017-01-01)
    Shahrir Rizal Kasjoo
    ;
    Zulfadhli Zailan
    ;
    Sanna Taking
    ;
    Wan Zuki Azman Wan Muhamad
    ;
    Muammar Mohamad Isa
    ;
    Arshad M.
    A planar device known as the Self-Switching Diode (SSD) has been demonstrated as a high-speed rectifier, up to terahertz frequencies. The rectifying properties of SSD are dependent on a nonlinear current-voltage characteristic of the device. In this research, the rectification of two SSD rectifiers has been reported and their performances were evaluated. The observed results showed a good agreement with the nonlinear theoretical analysis of both rectifiers by means of a Taylor series which can be utilized in improving the rectifying performance of any diode-based rectifier specifically for diodes with tunable threshold voltage such as SSDs.
  • Publication
    Simulation of unipolar planar device with asymmetrical barrier profile: a planar barrier diode
    (AIP Publishing, 2017-09-26)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    By introducing a funnel-shape semiconductor channel to create an asymmetrical energy barrier profile, a type of nonlinear device has been proposed and simulated which is referred as planar barrier diode (pbd). An applied voltage v across a pbd provides different height of the barrier depending on the sign of v. This results in a nonlinear current-voltage characteristic that resembles a typical diode behavior and therefore it can be used in signal rectification. The intrinsic cut-off frequency obtained in the simulation of the p-type silicon pbd rectifier was ∼15 ghz.
      5  19
  • Publication
    Rectification performance of self-switching diodes in silicon substrate using device simulator
    (Institute of Electrical and Electronics Engineers (IEEE), 2017-01-03)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    A planar nanodevice, known as the self-switching diode (SSD) has been demonstrated to rectify electromagnetic signals at microwave and terahertz frequencies. This diode has a non-linear current-voltage (I-V) characteristic due to the structure of the device which consists of asymmetric nanochannel. To further explore the properties of SSD rectifiers, in this work, silicon-based SSDs with different dielectric materials that filled up the trenches of the devices were simulated using ATLAS device simulator under the temperature range of 250 K-500 K. The results showed that the rectification performance of the SSDs was deteriorated with increasing temperature for all dielectric materials which might be due to the thermal-activated electronic transport behavior of the devices.
      8  16
  • Publication
    Rectification performance of self-switching diode in various geometries using ATLAS simulator
    (IEEE, 2017-01-03)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    Characterization on a planar nano-device, known as self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation has been conducted on InGaAs-based SSD with 70 nm L-shaped channels using twodimensional (2D) ATLAS simulator. The current-voltage (I-V) characteristic of the device is found asymmetrical, similar to I-V behavior of a diode. The structure geometries of the channel are varied in term of channel length, channel width, and trenches width to observe the I-V behavior of the device. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the rectification performance of each configuration has been observed and concluded. The results obtained can assist the optimization in the design of the SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
      5  20
  • Publication
    An overview of self-switching diode rectifiers using green materials
    (AIP Publishing, 2017-09-26)
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Syahrun Nizam Md Arshad @ Hashim
    ;
    Sanna Taking
    A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of 'green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current 'green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.
      4  18