Rozana Aina Maulat Osman
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Preferred name
Rozana Aina Maulat Osman
Official Name
Rozana Aina, Maulat Osman
Alternative Name
Osman, R. A.M.
Osman, A. Rozana
Maulat Osman, Rozana Aina
Osman, Rozana A.M.
Osman, R.
Osman, R. A.Maulat
Main Affiliation
Scopus Author ID
37261764900
Researcher ID
DXB-4277-2022

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  • Publication
    Effect of Sn Doping on the Curie Temperature, Structural, Dielectric and Piezoelectric Properties of Ba0.8Sr0.2Ti1−xSnxO3 Ceramics
    ( 2023-11-01)
    Nasir N.N.
    ;
    Rozana Aina Maulat Osman
    ;
    Mohd Sobri Idris
    ;
    Muhsen K.N.D.K.
    ;
    Prabakaran A/L Poopalan
    ;
    Nur Izzati Muhammad Nadzri
    ;
    Jumali M.H.H.
    ;
    Jamil N.H.B.
    Ba0.8Sr0.2Ti1−xSnxO3 material with varying Sn concentrations (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10) was synthesized using the conventional solid-state reaction method. X-ray diffraction (XRD) analysis reveals that as the Sn concentration increases from x = 0 to x = 0.10, the Ba0.8Sr0.2Ti1−xSnxO3 undergoes a structural phase change from tetragonal to cubic. Dielectric analysis of Ba0.8Sr0.2Ti1−xSnxO3 shows a significant drop in Tc, from 65 to 5°C, caused by the replacement of Sn4+ ions with larger ionic radii compared to Ti4+ ions at the B-sites. The composition with x = 0 exhibits the largest dielectric constant due to its enormous spontaneous dipole moments. Conversely, the substitution of Sn in Ba0.8Sr0.2Ti1−xSnxO3 reveals a decrease in the dielectric constant at the B-site structure of perovskite, resulting in a reduced tolerance factor and a decrease in the tetragonality of the sample. However, the pinching effect significantly enhances the dielectric constant of the sample with x = 0.10. Grain size measurements for x = 0 demonstrate a well-distributed grain structure. Additionally, the undoped sample exhibits a higher piezoelectric constant than the Ba0.8Sr0.2Ti1−xSnxO3 samples. According to the piezoelectric constant data, the composition with a tetragonal structure appears to have a greater piezoelectric constant than the cubic structure.
      1
  • Publication
    Ga 2 O 3 thin films by sol-gel method its optical properties
    ( 2020-01-08)
    Cheah L.
    ;
    Rozana Aina Maulat Osman
    ;
    Prabakaran A/L Poopalan
    Gallium (III) oxide Ga2O3 is emerging in the field of wide bandgap semiconductor for various applications such as solar-blind photodetectors et al. because of its wide bandgap. For this reason, the optical properties of Ga2O3 by sol-gel method are analyzed. Ga2O3 thin films are prepared by spin coating method. The annealing temperature to make α-Ga2O3 is in the range of 450°C-550°C, where after 550°C, β-Ga2O3 is obtained as reported in reviewed works. Therefore, annealing temperatures of samples are set at 500°C, 700°C and 900°C. X-ray diffraction is performed to characterize the structure of the sample. The optical bandgap of Ga2O3 is calculated based on the transmittance value measured from UV-Visible spectrophotometer, which range from 4.8eV to 5.0eV.
      1