Home
  • English
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Latviešu
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Log In
    New user? Click here to register. Have you forgotten your password?
Home
  • Browse Our Collections
  • Publications
  • Researchers
  • Research Data
  • Institutions
  • Statistics
    • English
    • Čeština
    • Deutsch
    • Español
    • Français
    • Gàidhlig
    • Latviešu
    • Magyar
    • Nederlands
    • Português
    • Português do Brasil
    • Suomi
    • Log In
      New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Resources
  3. UniMAP Index Publications
  4. Publications 2023
  5. Effect of Sn Doping on the Curie Temperature, Structural, Dielectric and Piezoelectric Properties of Ba0.8Sr0.2Ti1−xSnxO3 Ceramics
 
Options

Effect of Sn Doping on the Curie Temperature, Structural, Dielectric and Piezoelectric Properties of Ba0.8Sr0.2Ti1−xSnxO3 Ceramics

Journal
Journal of Electronic Materials
ISSN
03615235
Date Issued
2023-11-01
Author(s)
Nasir N.N.
Rozana Aina Maulat Osman
Universiti Malaysia Perlis
Mohd Sobri Idris
Universiti Malaysia Perlis
Muhsen K.N.D.K.
Prabakaran A/L Poopalan
Universiti Malaysia Perlis
Nur Izzati Muhammad Nadzri
Universiti Malaysia Perlis
Jumali M.H.H.
Jamil N.H.B.
DOI
10.1007/s11664-023-10667-5
Abstract
Ba0.8Sr0.2Ti1−xSnxO3 material with varying Sn concentrations (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10) was synthesized using the conventional solid-state reaction method. X-ray diffraction (XRD) analysis reveals that as the Sn concentration increases from x = 0 to x = 0.10, the Ba0.8Sr0.2Ti1−xSnxO3 undergoes a structural phase change from tetragonal to cubic. Dielectric analysis of Ba0.8Sr0.2Ti1−xSnxO3 shows a significant drop in Tc, from 65 to 5°C, caused by the replacement of Sn4+ ions with larger ionic radii compared to Ti4+ ions at the B-sites. The composition with x = 0 exhibits the largest dielectric constant due to its enormous spontaneous dipole moments. Conversely, the substitution of Sn in Ba0.8Sr0.2Ti1−xSnxO3 reveals a decrease in the dielectric constant at the B-site structure of perovskite, resulting in a reduced tolerance factor and a decrease in the tetragonality of the sample. However, the pinching effect significantly enhances the dielectric constant of the sample with x = 0.10. Grain size measurements for x = 0 demonstrate a well-distributed grain structure. Additionally, the undoped sample exhibits a higher piezoelectric constant than the Ba0.8Sr0.2Ti1−xSnxO3 samples. According to the piezoelectric constant data, the composition with a tetragonal structure appears to have a greater piezoelectric constant than the cubic structure.
Funding(s)
Ministry of Higher Education, Malaysia
Subjects
  • BaTiO 3 | BST | BSTS ...

File(s)
research repository notification.pdf (4.4 MB)
Views
1
Acquisition Date
Nov 19, 2024
View Details
google-scholar
Downloads
  • About Us
  • Contact Us
  • Policies