Norhawati Ahmad
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Preferred name
Norhawati Ahmad
Official Name
Norhawati, Ahmad
Alternative Name
Ahmad, Norhawati Binti
Ahmad, N.
Ahmad, Norhawati
Main Affiliation
Scopus Author ID
48661864200
Researcher ID
IAW-0777-2023

Research Output

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  • Publication
    Review of mixer design for low voltage - Low power applications
    ( 2017-09-26)
    Nurulain D.
    ;
    Musa F.A.S.
    ;
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Shahrir Rizal Kasjoo
    A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.
  • Publication
    IoT Monitoring System for Fig in Greenhouse Plantation
    ( 2023-07-01)
    Mohd Firdaus Ibrahim
    ;
    Muammar Mohamad Isa
    ;
    Razaidi Hussin
    ;
    Syed Muhammad Mamduh Syed Zakaria
    ;
    Norhawati Ahmad
    ;
    Yuan C.K.J.
    ;
    Abdullah A.F.T.
    Fig is rich in nutrients and has a high market value due to its extensive application in promoting a nutritious food supply and supporting various medical disciplines. However, the equatorial climate in Malaysia poses significant difficulties for the large-scale cultivation of figs. Therefore, a Smart Monitoring System for controlled Greenhouse Plantation was proposed in this study to enable more efficient cultivation. The proposed system was equipped with LoRa and GSM to overcome the distance and data transmission limitations, developed using the Arduino Uno microcontroller. The proposed system consists of sensors to measure soil moisture, temperature, and humidity, while the data is transmitted using long-range LoRa communication to the control unit. The sensors circuit also has a solar power supply for convenient application in rural areas. The control unit is placed at a location with good data coverage. The system functioned well, and the monitoring parameter was accurately read, collected, and updated every 30 minutes. The optimal temperature, humidity, and soil moisture for growing fig is 22°C-33°C, > 60%, and 50%-60%, respectively. Real-time data monitoring enabled the sensors and control unit to achieve LoRa data transmission over a distance of 2.5 km. Any data exceeding the controlled parameters will trigger an alarm so that the user can perform corrective actions.
      2  33
  • Publication
    Low voltage low power FGMOS based current mirror
    ( 2017-11-22)
    Nurulain D.
    ;
    Musa F.A.S.
    ;
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Shahrir Rizal Kasjoo
    This paper presents the comparison of a conventional current mirror with the one utilizing floating gate MOSFET transistors (FGMOS) to achieve low power (LP) and low voltage (LV) design. The device structure has been simulated with 0.1μ CMOS technology and 1.2V voltage supply by using SAED 90nm PDK with the Synopsys Custom Designer tool. The FGMOS circuit has shown to have low power consumption of 9.62mW, smaller threshold voltage of 0.2V and Iout of 20 mA. The improvement of 40.1% from conventional current mirror has shown the LV and LP capability of FGMOS transistor.
      35  2
  • Publication
    TCAD simulation of AlGaN/GaN HEMT grown on high-resistivity silicon substrate
    ( 2024-02-08)
    Sanna Taking
    ;
    Ofiare A.
    ;
    Norhawati Ahmad
    ;
    Ahmad Zulfadli Musa
    ;
    Sendekisager, Kogunen
    ;
    Muammar Mohamad Isa
    ;
    Shahrir Rizal Kasjoo
    ;
    Wasige E.
    This paper studies GaN device structure on silicon substrates. The fabricated device, with LG of 4-μm and WG of 100-μm, demonstrates a maximum drain current of 780mA/mm and a threshold voltage of - 4V. The two-dimensional Silvaco simulator tools are used to analyze and model the fabricated device. The simulation results closely match the experimental findings, validating the developed model's accuracy. These outcomes signify that the study can be a reference for modeling other GaN-based devices in future material growth and process development.
      4  36