Zarimawaty Zailan
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Preferred name
Zarimawaty Zailan
Official Name
Zarimawaty, Zailan
Alternative Name
Zailan, Z.
Zailan, Zarimawaty
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Scopus Author ID
55603553500
Researcher ID
EHB-9502-2022

Research Output

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  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Idris N.B.
    ;
    Rosli K.A.
    ;
    Zakaria N.F.
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
      1  28
  • Publication
    Improved rectification performance and terahertz detection in hybrid structure of self-switching device (SSD) and planar barrier diode (PBD) using two-dimensional device simulation
    ( 2020-01-01)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Song A.
    Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self- Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero- bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.
      3  33
  • Publication
    Silicon nanowire biosensors for diabetes mellitus monitoring
    ( 2024-10)
    M. Shaifullah A. S
    ;
    J. Jumat
    ;
    Mohammad Nuzaihan Md Nor
    ;
    J. N. Ismail
    ;
    Mohamad Faris Mohamad Fathil
    ;
    Nur Hamidah Abdul Halim
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    M. Syamsul
    ;
    Rozaimah A. T
    The main goal of this research is the development of a label-free biosensor for the detection of diabetes mellitus (DM) using the target molecule retinol-binding protein 4 (RBP4). The enzyme-linked immunosorbent assay (ELISA) approach, currently used to detect DM, is time-consuming and difficult. As a result, label-free biosensors are being considered as an alternative. In this research, silicon nanowires (SiNWs) were selected as the transducer for this biosensor due to their low cost, real-time analysis capability, high sensitivity, and low detection limit. The SiNWs were created using conventional lithography, reactive ion etching (RIE), and physical vapor deposition (PVD), and then dripped with a gold nanoparticle solution to create gold-decorated SiNWs. The surface of the gold-decorated SiNWs was functionalized using 3-aminothiophenol and glutaraldehyde solutions before being immobilized with DM RBP4 antibodies and targets. The electrical characterization of the gold nanoparticle decorated SiNWs biosensor revealed good performance in DM detection. The pH tests confirmed that the SiNWs acted as a transducer, with current proportional to the DM RBP4 concentration. The estimated limit of detection (LOD) and sensitivity for detecting DM RBP4 binding were 0.076 fg/mL and 8.92 nA(g/mL)-1, respectively. This gold nanoparticle decorated SiNWs biosensor performed better than other methods and enabled efficient, accurate, and direct detection of DM. The SiNWs could be used as a distinctive electrical protein biosensor for biological diagnostic purposes. In conclusion, gold nanoparticle deposition offers effective label-free, direct, and high-accuracy DM detection, outperforming previous approaches. Thus, these SiNWs serve as novel electrical protein biosensors for future biological diagnostic applications.
      23  2
  • Publication
    An overview of self-switching diode rectifiers using green materials
    (AIP Publishing, 2017-09-26)
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Syahrun Nizam Md Arshad @ Hashim
    ;
    Sanna Taking
    A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of 'green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current 'green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.
      4  17
  • Publication
    Rectification performance of self-switching diode in various geometries using ATLAS simulator
    (IEEE, 2017-01-03)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    Characterization on a planar nano-device, known as self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation has been conducted on InGaAs-based SSD with 70 nm L-shaped channels using twodimensional (2D) ATLAS simulator. The current-voltage (I-V) characteristic of the device is found asymmetrical, similar to I-V behavior of a diode. The structure geometries of the channel are varied in term of channel length, channel width, and trenches width to observe the I-V behavior of the device. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the rectification performance of each configuration has been observed and concluded. The results obtained can assist the optimization in the design of the SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
      5  19
  • Publication
    Fabrication and simulation of silicon nanowire pH sensor for Diabetes Mellitus detection
    ( 2023-04)
    C. Y. Chean
    ;
    Mohammad Nuzaihan Md Nor
    ;
    Mohamad Faris Mohamad Fathil
    ;
    M. I. Hashim
    ;
    Nur Hamidah Abdul Halim
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Syamsul Syahrun Awang@Hashim
    ;
    Rozaimah A.T
    Diabetes Mellitus (DM) is a disease failed to control the balance of blood sugar level due to lack of insulin thereby it effect human health. In Malaysia, there are around 3.9 millions people aged 18 years old and above have diabetes according to National Health and Morbidity Survey 2019. Silicon Nanowire is a nanostructure which has ultra-high sensitivity and non-radioactive that has potential given good performances when applied on pH sensor and biosensor. Silicon nanowire pH sensor and biosensor is an electronic sensor that investigated to improve the sensitivity and accuracy for detecting DM. This project consists of two parts, which are fabrication of silicon nanowire pH sensor and simulation of silicon nanowire biosensor as preliminary study. In fabrication, silicon nanowire of pH sensor is fabricated by conventional lithography process, reaction ion etching (RIE) and metallization to achieved the width of 100 nm silicon nanowire. The pH6, pH7, pH10 and DI water as analytes to analysis the current-voltage (I-V) characteristics of silicon nanowire pH sensor. In second part, the silicon nanowire biosensor as preliminary study is done simulation by Silvaco ATLAS devices simulator. The silicon nanowire with 30 nm in height and 20 nm in width of biosensor is designed and simulated to analyze the performance in terms of sensitivity. I-V characteristics of silicon nanowire biosensor according to different concentration of negative interface charge is determined. The negative interface charge represent as the Retinol Binding Protein 4 (RBP4) which is used to diagnose DM. The I-V characteristic based on the change in current, resistance and conductance to determine sensitivity. Lastly, the sensitivity of silicon nanowire pH sensor obtained 23.9 pS/pH while the sensitivity of simulated silicon nanowire biosensor obtained 3.91 nS/e.cm2. The results shown the more negative charge of concentration analyte attached on surface silicon nanowire has been accumulated more current flow from drain terminal to source terminal. It leads to the resistance becomes highest and obtained good sensitivity. In summary, the silicon nanowire pH sensor exhibited good performance and high sensitivity in detection pH level. The simulated silicon nanowire biosensor is capable of detecting biomolecular interactions charges to obtained high sensitive and accuracy result.
      3  23
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nurul Bariah Idris
    ;
    Khairul Affendi Rosli
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
      4  35
  • Publication
    Self-switching diodes as RF rectifiers: Evaluation methods and current progress
    ( 2019-06-01)
    Zakaria N.
    ;
    Shahrir Rizal Kasjoo
    ;
    Isa M.
    ;
    Zarimawaty Zailan
    ;
    Arshad M.
    ;
    Sanna Taking
    In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.
      27  3
  • Publication
    Application of Taguchi method in optimization of structural parameters in self-switching diode to improve the rectification performance
    ( 2020-01-08)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mokhar M.B.M.
    ;
    Juhari N.
    This paper presents the use of Taguchi method in the optimization process of a Self-switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for rectification. The rectification performance is mainly contributed by a parameter known as curvature coefficient, γ which is derived from the current-voltage (I-V) behavior of the device and can be altered by varying the device's geometrical structure. The parameters involved are the channel length, channel width and trenches width of the device, and the rectification performance are observed based on the peak of γand its corresponding bias voltage. Using Taguchi method for design of experiment (DOE), effects on the interaction among these parameters are investigated by employing the orthogonal array and evaluation of the signal-to-noise (S/N) ratio both in the peak of γand its corresponding bias voltage. The proposed parameters using this method showed γ peak of 32 V-1 and 30 V-1 at DC bias of 30 mV and zero-bias, respectively.
      33  3
  • Publication
    Rectification performance of self-switching diodes in silicon substrate using device simulator
    (Institute of Electrical and Electronics Engineers (IEEE), 2017-01-03)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    A planar nanodevice, known as the self-switching diode (SSD) has been demonstrated to rectify electromagnetic signals at microwave and terahertz frequencies. This diode has a non-linear current-voltage (I-V) characteristic due to the structure of the device which consists of asymmetric nanochannel. To further explore the properties of SSD rectifiers, in this work, silicon-based SSDs with different dielectric materials that filled up the trenches of the devices were simulated using ATLAS device simulator under the temperature range of 250 K-500 K. The results showed that the rectification performance of the SSDs was deteriorated with increasing temperature for all dielectric materials which might be due to the thermal-activated electronic transport behavior of the devices.
      8  13