International Journal of Nanoelectronics and Materials (IJNeaM)
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IJNeaM aims to publish original work of importance in the fields of nanoscience and engineering. Topics covered including Theoretical, Simulation, Synthesis, Design and Fabrication of Nanomaterials and Nanodevices; Metals, Insulators, and Semiconductors with a focus on Electronic, Structural, Magnetic, Optical, Thermal, Transport, Mechanical and other properties for the specialists in Engineering, Chemistry, Physics and Materials Science. IJNeaM accepts submission in the form of Reviews, Research Articles, Short Communications, and selected conference papers.
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PublicationFabrication and characterization of Cu2O:Ag/Si solar cell via thermal evaporation technique(Universiti Malaysia Perlis (UniMAP), 2020-07)Cuprous oxide, a p-type semiconductor, permits multiple device applications due to the non-toxic nature, suitable direct energy gap, earth abundance, and ideal band alignment needed for solar cell and photoelectrochemical applications. Due to that, there has been a renewal of interest in solar cells fabrication field based on Cu2O material. In this work, pure cuprous oxide and silver nanoparticles doped cuprous oxide (0.02, 0.04, 0.06 wt.%) films were prepared via thermal evaporation technique with a thickness of 60 nm. The structural, morphological, optical, and electrical properties of the films have been studied by characterization instruments such as X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Atomic Force Microscope (AFM), UV-Visible spectrophotometer, and I-V characteristic. The XRD revealed that the fabricated films have a certain amorphous quality and the grain size was found to be in between (9.2-18.4) nm which comparable to that measured from FESEM. The optical bandgap of the samples was found to be in between 2.79 eV and 3.42 eV which was the main factor in manipulating and improving the Cu2O optical properties by doping and choosing the appropriate ones to fabricate high efficiency and low-cost solar cells. The effect of the Ag doping on the Cu2O properties was obvious and positively influenced by solar cell efficiency improvement. Optimization of the deposition conditions and doping process led to enhanced solar cell performance, especially the conversion efficiency achieved (3.5) by doping 0.04% Ag to Cu2O which is considered to be highly efficient compared to the overall efficiency of Cu2O solar cells. This can open a new route for the fabrication of Cu2O based solar cells with improved performance.
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PublicationThe effect of Ti on physical properties of Fe2O3 thin films for gas sensor applications(Universiti Malaysia Perlis (UniMAP), 2020-04)Hematite (Fe2O3) and titanium (1 wt% and 3 wt%) doped Fe2O3 were prepared onto glass and p-type silicon wafer using the pulsed laser deposition technique. X-ray diffraction analysis indicates that samples of pure and Ti-doped were polycrystalline with a crystal orientation along (113) plane. The average grain size increases with the increasing titanium content. Surface morphology was studied through a Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), which reveal that grains are columnar in shape. UV-visible transmission spectroscopy reveals that the deposited films are transparent within a visible range. The value of the optical bandgap exhibits a decrease from 1.93 eV to 1.48 eV as titanium concentration increases. Gas sensitivity measurements at 30°C. showed a decrease in sensitivity with the increase of doping and gas concentration.
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PublicationPerformance of multi-function devices fabricated from La2O3-doped NiO thin films(Universiti Malaysia Perlis (UniMAP), 2020-01)Multi-function devices fabricated from lanthanum oxide (La2O3)-doped NiO thin films at 0, 2, 4, and 6% wt on porous silicon (PS) substrates were prepared by Pulsed Laser Deposition (PLD) method. PS was fabricated using n-type Si with (111) orientation by the photoelectrochemical etching process (ECE) at a constant etching time of 20 minutes and current density of 15 mA/cm2. X-ray Diffraction (XRD) and AFM results showed uniform morphology and good crystal quality of the synthesized nanostructures. The energy gap (Eg) of NiO is 3.25 eV, and it increased as the doping ratio was increased. Gas sensing and UV-detection were studied respectively. The maximum sensitivity to H2S gas was observed in the film doped with 6% La2O3 at 100ºC and found to be 3500%. The photosensitivity was 66% for NiO/PS and 118% with La2O3 doping ratio of 6%. The novelty of this work is to use a very simple and low-cost method Pulsed Laser Deposition (PLD) to growth La2O3 doped NiO as compared with other technique which used to fabricate nanostructure that is either very expensive or very time-consuming.
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PublicationA review on the different techniques of GaN heteroepitaxial growth: current scenario and future outlook(Universiti Malaysia Perlis (UniMAP), 2020-01)Although Metal-Organic Chemical Vapour Deposition (MOCVD) is the most common technique to grow III-nitride films for light-emitting diode (LED) application, there are still several open questions such as the dislocations in LED structures and low thermal conductivity. The solutions to such problems have been approached by various deposition techniques over the past few years. In this review, the properties of gallium nitride (GaN) grown using different techniques and the consequences of the heteroepitaxial layers are discussed. At first, the general properties of GaN and its application for optoelectronic devices are presented briefly. To improve the crystallinity of GaN, it is necessary to identify and evaluate the defects present in the heteroepitaxial layers, which lead to poor crystal quality of films, and eventually to find an approach to overcome these issues. Several approaches using various substrates that have been published are discussed here and, finally, the directions of a new potential method for GaN growth using the magnetron sputtering technique are described.
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PublicationDesigns and simulations of millimetre wave on-chip single turn inductors for 0.13 μm RF CMOS process technology(Universiti Malaysia Perlis (UniMAP), 2020-01)The upcoming Fifth Generation (5G) network has promoted researches in integrated circuit designs and microelectromechanical systems (MEMS). Since the 5G technologies operate mainly in the millimetre wave (mm-wave) band, developing electronic components which are compatible with this frequency range is therefore necessary. This paper presents the design of four novel inductors, applied particularly in Low Noise Amplifiers (LNAs) which operate at 60 GHz to overcome the limitations of the particular Process Design Kit (PDK) in which the provided scalable inductors are characterised at a maximum frequency of 30 GHz. The design is based on Silterra’s 0.13 μm radio frequency complementary metal-oxide-semiconductor (RF CMOS) process technology. The inductors use Ultra-Thick Metal (UTM) with a copper thickness of 3.3 μm. A mixture of analytical and parametric analyses is utilised in designing the four spiral inductors which can be implemented in the PDK used by the aforementioned LNA. The inductances and Q-factors across 1 GHz to 150 GHz were plotted and analysed. The results show that the four designs exhibit very good performance at 60 GHz with minimal tolerances. This paper serves as a proof-of-concept for a methodology on custom inductor design and simulations with existing PDK limitations.
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