Publication:
Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
Date
2022-01-01
Authors
Ali H.A.A.A.
Sohiful Anuar Zainol Murad
Ahmad Fariz Hasan
Faizah Abu Bakar
Sapawi R.
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Research Projects
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Abstract
This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.
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Keywords
5G | CMOS | differential active inductor | Inductance | Q factor