Home
  • English
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Latviešu
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Log In
    New user? Click here to register. Have you forgotten your password?
Home
  • Browse Our Collections
  • Publications
  • Researchers
  • Research Data
  • Institutions
  • Statistics
    • English
    • Čeština
    • Deutsch
    • Español
    • Français
    • Gàidhlig
    • Latviešu
    • Magyar
    • Nederlands
    • Português
    • Português do Brasil
    • Suomi
    • Log In
      New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Resources
  3. UniMAP Index Publications
  4. Publications 2020
  5. Microwave synthesis of silicon carbide nanowhiskers: Effect of molar ratio
 
Options

Microwave synthesis of silicon carbide nanowhiskers: Effect of molar ratio

Journal
Materials Today: Proceedings
Date Issued
2020-01-01
Author(s)
Lee Chang Chuan
Universiti Malaysia Perlis
Kahar S.M.
Universiti Malaysia Perlis
Voon Chun Hong
Universiti Malaysia Perlis
DOI
10.1016/j.matpr.2020.04.571
Abstract
Silicon carbide (SiC) is an attractive material for its excellent properties such as wide band gap, high chemical stability and thermal conductivity. The conventional methods for the preparation of SiC are time and energy consuming. In this paper, SiC nanowhiskers were synthesized by utilizing microwave heating. Mixture of graphite and silica of various ratio was heated to 1400 °C for 30 min at a heating rate of 20 °C/min. It was found that almost complete conversion of graphite and silica to silicon carbide nanowhiskers was observed for sample of mixture in the ratio of 1:3. Vapor-solid mechanism was suggested to explain the formation of SiC nanowhiskers.
Subjects
  • Graphite

  • Heating

  • Microwave

  • Nanowhiskers

  • Silicon carbide

  • Vapor-solid mechanism...

File(s)
Microwave synthesis of silicon carbide nanowhiskers Effect of molar ratio.pdf (59.35 KB)
google-scholar
Views
Downloads
  • About Us
  • Contact Us
  • Policies