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  1. Home
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  5. Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications
 
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Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications

Journal
AIP Conference Proceedings
ISSN
0094243X
Date Issued
2020-01-08
Author(s)
Halim N.F.A.B.
Sohiful Anuar Zainol Murad
Universiti Malaysia Perlis
Azizi Harun
Universiti Malaysia Perlis
Mohd Nazrin Md Isa
Universiti Malaysia Perlis
Shaiful Nizam Mohyar
Universiti Malaysia Perlis
Anishaziela Azizan
Universiti Malaysia Perlis
DOI
10.1063/1.5142114
Abstract
This paper presents a design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier (UWB LNA) with forward body bias technique for wireless applications. The UWB LNA is designed and simulated using 0.13-μm technology in Cadence software. The proposed UWB LNA consists of two stage common-source (CS) amplifiers with a forward body bias technique. A source degenerated inductor is used at the first stage to achieve a wideband input matching and high linearity. At the second stage, a shunt-peaking inductor is employed to enhance gain at higher frequency. The simulation results indicate that the proposed UWB LNA achieves a power gain (S21) of 10 dB, an input return loss (S11) is less than -5 dB, a minimum noise figure (NF) of 8.5 dB in the frequency range of 3.1- 6.0 GHz with power dissipation of 17.2 mW. The linearity analysis shows a 1 dB compression point (P1dB) of -9 dBm and the third-order intermodulation intercept points (IIP3) of 4 dBm are achieved. The proposed UWB LNA's layout is 0.68 mm2.
File(s)
research repository notification.pdf (4.4 MB)
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1
Acquisition Date
Nov 19, 2024
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